Untitled
Abstract: No abstract text available
Text: X2N5912 Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)367m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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X2N5912
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2N5912
Abstract: 2N5911 2N5911-12 X2N5912
Text: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
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2N5911
2N5912
-65oC
200oC
-55oC
150oC
10sec)
300oC
367mW
500mW
2N5912
2N5911-12
X2N5912
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2N5911
Abstract: 2N5912 2N5911-12 DS013 X2N5912 2N5912 jfet
Text: Dual N-Channel JFET High Frequency Amplifier LLC 2N5911 / 2N5912 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
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Original
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PDF
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2N5911
2N5912
-65oC
200oC
-55oC
150oC
10sec)
300oC
367mW
500mW
2N5912
2N5911-12
DS013
X2N5912
2N5912 jfet
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Untitled
Abstract: No abstract text available
Text: Dual N-Channel JFET High Frequency Amplifier LLC 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
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Original
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PDF
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2N5911
2N5912
-65oC
200oC
-55oC
150oC
10sec)
300oC
367mW
500mW
|
Untitled
Abstract: No abstract text available
Text: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V
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OCR Scan
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PDF
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2N5911/2N5912
367mW
500mW
2N5911
2N5912
DDDCH33
300nA,
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2N5912
Abstract: No abstract text available
Text: Dual N-Channe! JFET High Frequency Amplifier caioqic CORPORATION 2N5911 /2N5912 FEATU R ES A B S O L U T E MAXIMUM RATIN G S Ta - 25°C unless otherwise specified • Tight Tracking • Low Insertion L o s s • G o o d M atching Gate-Drain or Gate-Source Voltage . -25V
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OCR Scan
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PDF
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2N5911
/2N5912
367mW
500mW
2N5912
300nA,
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2N5911
Abstract: 2n5912 2N5911-12 X2N5912 2NS912
Text: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911/2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V
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OCR Scan
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PDF
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2N5911
/2N5912
10sec)
367mW
500mW
2N5911
2NS912
300nA,
1A4432S
000CH33
2n5912
2N5911-12
X2N5912
2NS912
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