Untitled
Abstract: No abstract text available
Text: X2N6485 Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)200p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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X2N6485
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2N6485
Abstract: 2N6483 X2N6485 2n6485 equivalent 2N64 U401
Text: _CQIOylC _| _ Dual N-Channel JFET Low Noise Amplifier CORPORATION 2N6483 - 2N6485 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • Ultra Low Noise High CMRR Low Offset Tight Tracking Gate-Source or Gate-Drain Voltage (Note 1) .-50V
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2N6483
-2N6485
10sec)
250mW
400mW
2N6485
X2N6485
2n6485 equivalent
2N64
U401
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2n6485
Abstract: 2n6485 equivalent
Text: Dual N-Channel JFET Low Noise Amplifier caioqic CORPORATION 2N6483-2N6485 ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • Ultra Low Noise High CMRR Low Offset Tight Tracking G ate-Source or Gate-Drain Voltage (Note 1) . -50V
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2N6483-2N6485
400mW0V,
200nA
200hA,
20LogioAVDo/
2n6485
2n6485 equivalent
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2N6485
Abstract: 2N6483 2N6483-2N6485 hz 9102 2n6485 equivalent 2N6484 U401 X2N6485 ultra low igss pA 200HA
Text: Dual N-ChannelJFET Low Noise Amplifier calocfic CORPORATION 2N6483- 2N6485 FEATURES • • • • ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified Ultra Low Noise High CMRR Low Offset Tight Tracking Gate-Source or Gate-Drain Voltage (Note 1) .-50V
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OCR Scan
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PDF
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2N6483-2N6485
10sec)
250mW
400mW
H43E2
2N6485
2N6483
2N6483-2N6485
hz 9102
2n6485 equivalent
2N6484
U401
X2N6485
ultra low igss pA
200HA
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