XA2 MMIC
Abstract: No abstract text available
Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
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SXA-289
SXA-289
100mA
EDS-100622
XA2 MMIC
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Xa2 TRANSISTOR
Abstract: SXH-189 6 ghz amplifier 20w
Text: Preliminary Preliminary Product Description SXH-189 Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXH-189
SXH-189
39dBm
1500mW
100mW
EDS-101247
Xa2 TRANSISTOR
6 ghz amplifier 20w
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Xa2 TRANSISTOR
Abstract: SXH-189 AN023
Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXH-189
SXH-189
EDS-101247
Xa2 TRANSISTOR
AN023
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XA2 MMIC
Abstract: Xa2 TRANSISTOR
Text: Preliminary Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
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SXA-289
SXA-289
EDS-100622
XA2 MMIC
Xa2 TRANSISTOR
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XA2 MMIC
Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
MPO-100136
016REF
118REF
041REF
015TYP
EDS-100622
XA2 MMIC
TOP MARKING C1 ROHM lot No
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XA2 MMIC
Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
MPO-100136
016REF
118REF
041REF
015TYP
EDS-100622
XA2 MMIC
TOP MARKING C1 ROHM lot No
SIRENZA
Sirenza C4 marking
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Sirenza amplifier SOT-89 Marking
Abstract: .XA2
Text: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXH-189
SXH-189
SXA-289
016REF
118REF
041REF
EDS-101247
Sirenza amplifier SOT-89 Marking
.XA2
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Xa2 TRANSISTOR
Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
016REF
118REF
041REF
EDS-100622
Xa2 TRANSISTOR
XA2 MMIC
Sirenza amplifier SOT-89
marking XA2
RF transistor marking IN SOT-89
sxa289
TOP MARKING C1 ROHM
ROHM SOT89 MARKING
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Untitled
Abstract: No abstract text available
Text: Preliminary Preliminary Product Description SXH-189 Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXH-189
SXH-189
EDS-101247
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Xa2 TRANSISTOR
Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ
Text: Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
016REF
118REF
041REF
EDS-100622
Xa2 TRANSISTOR
transistor 289
MMIC "SOT 89" marking
rf power amplifier 850 MHZ
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SXT-289
Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC
Text: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXT-289
Pate02
016REF
118REF
041REF
EDS-101157
transistor 289
marking 25 mmic sot-89
MMIC "SOT 89" marking
Xa2 marking
Xa2 TRANSISTOR
xamp 034
XA2 MMIC
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