LT10K

Abstract: 2500-00J 2500-02J 2500-04J 2500-06J
Contextual Info: ROVE PA RT Molded Unshielded RF Coils D DA SH IN # DU µ CT H A ± NC 5% E Q MI NI MU M TE ST FR EQ UE NC SR Y F (M MI Hz NI ) M DC UM R ( MH MA ES z) XI IST M A CU UM N C R MA RE (OH E XI NT MS M MO UM RAT ) LD (m ING SI A) ZE PP MI L A Series 2500 L I TA R Y

4948a

Abstract: MS90541
Contextual Info: ROVE PA RT Molded Unshielded RF Coils D DA SH IN # DU µ CT H A ± 5 NC % E Q MI NI MU M TE ST FR EQ UE NC SR Y F (M MI Hz NI ) M DC UM R ( MH MA ES z) XI IST M A CU UM N C R MA RE (OH E XI NT MS M MO UM RAT ) LD (m ING SI A) ZE PP MI L A Series 2500 L I TA R Y

Contextual Info: ROVE PA RT Molded Unshielded RF Coils D DA SH IN # DU µ CT H A ± 5 NC % E Q MI NI MU M TE ST FR EQ UE NC SR Y F (M MI Hz NI ) M DC UM R ( MH MA ES z) XI IST M A CU UM N C R MA RE (OH E XI NT MS M MO UM RAT ) LD (m ING SI A) ZE PP MI L A Series 2500 L I TA R Y

LT10K

Abstract: MS-90539 MS90541
Contextual Info: 2500R 2500 A MI NU MB ER MI * L DA SH IN # DU µ CT H A ± NC 5% E Q MI NI MU M TE ST FR EQ UE NC SR Y F (M MI Hz NI ) M DC UM R ( MH MA ES z) XI IST M A CU UM N C R MA RE (OH E XI NT MS M MO UM RAT ) LD (m ING SI A) ZE Series L I TA R Y PP ROVE D DA SH

Contextual Info: 2500R 2500 A MI NU MB ER MI * L DA SH IN # DU µ CT H A ± NC 5% E Q MI NI MU M TE ST FR EQ UE NC SR Y F (M MI Hz NI ) M DC UM R ( MH MA ES z) XI IST M A CU UM N C R MA RE (OH E XI NT MS M MO UM RAT ) LD (m ING SI A) ZE Series L I TA R Y PP ROVE D DA SH

SDS Relais

Abstract: sds relais 5v sds relais S2- 5V SDS RELAIS S2 INT5500 telefunken Telefunken u 237 M44C510 dil relay hamlin M44C588
Contextual Info: MARC4 4-Bit Microcontroller User’s Guide 1996 I. Introduction II. Installation Guide III. Software Development System IV. qFORTH Compiler V. Software Simulator VI. Emulator VII. Target Application Boards VIII. Piggybacks IX. OTP Programmer X. Appendix XI. Addresses

H-8012

Contextual Info: M iniature Quadrature Hybrid Couplers XI controlled material tolerances, ensures extra­ ordinary reproducibility of electrical param e­ ters as well as excellent phase and amplitude tracking. All units are packaged in lightweight solid aluminum cases with convenient mount­

Contextual Info: DS2011 DALLAS DS2011 2048 x 9 FIFO Chip SEMICONDUCTOR FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture w c 1* ds C • Flexible 2048 x 9 organization D3C D2C D id DOC XI C FFC • Low-power HCM OS technology • Asychronous and simultaneous read/write

DS2011

Abstract: DS2009
Contextual Info: DS2011 DALLAS DS2011 2048 x 9 FIFO Chip SEMICONDUCTOR FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture w c 1* ds C • Flexible 2048 x 9 organization D3C D2C D id DOC XI C FFC • Low-power HCM OS technology • Asychronous and simultaneous read/write

Contextual Info: DS2011 DALLAS SEMICONDUCTOR DS2011 2048 x 9 FIFO Chip FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture W C 1* DSC 2 D3C 3 • Flexible 2048 x 9 organization D2C D id DOC XI C FF C • Low-power HCMOS technology • Asychronous and simultaneous read/write

Contextual Info: DALLAS SEMICONDUCTOR DS2011 2048 x 9 FIFO Chip PIN ASSIGNMENT w c 1« D ec 2 D3C 3 D2Ü 4 • Flexible 2048 x 9 organization • Low-power HCMOS technology D1C 5 DOC 6 xi C 7 • Asychronous and simultaneous read/write FF C B • Bidirectional applications

Contextual Info: DS2012 DALLAS SEMICONDUCTOR DS2012 4096 x 9 FIFO Chip PIN ASSIGNMENT • First-in, first-out memory-based architecture W C 1* D8Ü 2 D3C 3 D2Ü 4 • Flexible 4096 x 9 organization • Low-power HCMOS technology D1C DOC XI C FFC • Asychronous and simultaneous read/write

DS2009

Abstract: DS2011 DS2013 100 watt hf transistor 12 volt DS2010 DS2009-50 DS2009-65 DS2009-80 DS2012 DS2009-120
Contextual Info: DS2009 DS2009 512 x 9 FIFO Chip • Flexible 512 x 9 organization • Low-power HCMOS technology • Asynchronous and simultaneous read/write • Bidirectional applications PIN ASSIGNMENT W 1 28 D8 D3 2 3 27 VCC D4 26 D5 D2 4 D1 D0 XI FF 5 6 7 25 24 23 D6

DS2011

Abstract: DS2009
Contextual Info: DS2011 DS2011 2048 x 9 FIFO Chip • Flexible 2048 x 9 organization • Low-power HCMOS technology • Asychronous and simultaneous read/write • Bidirectional applications PIN ASSIGNMENT W 1 28 D8 D3 2 3 27 VCC D4 26 D5 D2 4 D1 D0 XI FF 5 6 7 25 24 23 D6

sfns101

Contextual Info: SOL ITR ON DEVICE S INC 70 ¿ F | fl3bBbOE 0 0 0 1 ^ 5 3 7"* 3 r - 2 ^ SWITCH MOS SFNS101A POWER MOS PACKAG E TO-52 MA XI MU M RATINGS VDS rD IDM VGS PD IL ^J oper T . stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 100 Drain Current, Continuous @ Tc*25°C

rc4565

Abstract: A1536 DS2009 DS2009-35 DS2009-50 DS2009-65 DS2009-80 DS2013 141S1
Contextual Info: V y * DALLAS SEMICONDUCTOR 512 DS2009 9 FIFO Chip PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture W £ 1# D8ÍZ 2 D3C 3 D2C 4 D1C 5 DOH 6 XI c 7 FF C 8 • Flexible 512 x 9 organization • Low-power HCMOS technology • Asynchronous and simultaneous read/write

DS2010

Abstract: Q4 D8 DS2009
Contextual Info: DS2010 DS2010 1024 x 9 FIFO Chip PIN ASSIGNMENT W 1 28 D8 D3 2 3 27 VCC D4 26 D5 D2 4 5 6 7 D6 D7 • Bidirectional applications D1 D0 XI FF 25 24 23 • Fully expandable by word width or depth Q0 Q1 • Empty and full warning flags Q2 Q3 Q8 • Flexible 1024 x 9 organization

DS2009

Abstract: DS2012
Contextual Info: DS2012 DS2012 4096 x 9 FIFO Chip PIN ASSIGNMENT W 1 28 D8 D3 2 3 27 VCC D4 26 D5 D2 4 5 6 7 D6 D7 • Bidirectional applications D1 D0 XI FF 25 24 23 • Fully expandable by word width or depth Q0 Q1 • Empty and full warning flags Q2 Q3 Q8 • Flexible 4096 x 9 organization

DS2011

Abstract: DS2009 DS2009-120 DS2009-35 DS2009-50 DS2009-65 DS2009-80 DS2010
Contextual Info: DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 F IF O C h ip PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture W C 1# D 8d 2 D3C 3 D2Ü 4 • Flexible 5 1 2 x9 organization • Low-power HCMOS technology D id DOC XI 0 FF C • Asynchronous and simultaneous read/write

DS2013

Abstract: DS2009
Contextual Info: DS2013 DS2013 8192 x 9 FIFO Chip FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture W 1 28 D8 D3 2 3 27 VCC D4 26 D5 D2 4 • Asychronous and simultaneous read/write D1 D0 D6 D7 • Bidirectional applications XI FF 5 6 7 25 24 23 • Fully expandable by word width or depth

X3100

Contextual Info: A p p l i c a t io n N o t e A V A I L A B L E \ 3 or 4 Cell Li-Ion BATTERY PACKS P relim in ary Inform ation XI €01 X3100 3 or 4 Cell Li-Ion Battery Protection and Monitor IC FEATURE BENEFIT • Software selectable safety levels and variable protect detection/release times

14285Q

Abstract: 14285S
Contextual Info: D S14285/D S14287 DALLAS SEMICONDUCTOR DS1 4285/DS1 4287 Real Time Clock with NV RAM Control PIN ASSIGNMENT FEATURES V cco C , 24 □ XI C 2 23 □ sow X2 C 3 22 □ CEO ADO I I 4 21 □ ceT AD1 C 5 20 □ V BAT AD2 C 8 19 □ IRQ AD3 C 1 18 □ RE S ET AD4 C

Contextual Info: D S 17285/D S17287 P R E L IM IN A R Y DALLAS SEMICONDUCTOR D S 1 7 2 8 5 /D S 1 7 2 8 7 3 Volt/5 Volt Real Time Clock PIN ASSIGNMENT FEATURES Incorporates industry standard DS1287 PC clock plus enhanced features: C 1 xi L 2 X2 C 3 ADO C 4 ^ adì n 5 20 AD2 C

9660t

Abstract: LH521008
Contextual Info: SHARP b OE CORP D • Ô1ÔD7TÔ DDDTME? 302 «SRPJ 'T - H C - 2 3 - / O LH101504 LH101510 . R E L I M I N A Ü 3 H 1 3 C5 WF A,s Au Ai 3 R Y High-Speed BiCMOS 1M 1M xi ECL Static RAM ■ Description ■ The LH101504/LH101510 is a 256K/1M-bit high speed