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    SL 0380 R

    Abstract: MHW1172 3TB12 MHW1221 MHW1171-MHW1172 MHW1171 MHW1222 motorola mhw NP-80
    Text: I The LOW DISTQRT!ON . designed distortion amplifier. Idilme WI DEBNJD AMPLIFIER for broadband Specified applications for Features all gold metal lization @ Broadband ~ specifically characteristics. I&F MHz Typ MHW 1171 MHW1172 22.OdB (Typ) MHW 1221 MHW1222


    Original
    MHW1172 MHW1222 MHW1171 MHW1221 SL 0380 R MHW1172 3TB12 MHW1221 MHW1171-MHW1172 MHW1171 MHW1222 motorola mhw NP-80 PDF

    s585

    Abstract: 24 t0 5 MHW3181 MHW3182 sil40 sil 4508 Motorola 1981
    Text: MHW3181 MHW3182 I I ‘TIM?RF Line LOW DISTORTION WI DEBAND AMPLIFIER MODULE I designed characteristics. Features for broadband Specifically ion-implanted applications intended arsenic and an all gold metal lization requiring TRi&di@4$MPLlF1ER low-distortion


    Original
    MHW3181 MHW3182 35-Channel s585 24 t0 5 MHW3181 MHW3182 sil40 sil 4508 Motorola 1981 PDF

    HP8542

    Abstract: MRF587
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilicon H igh-Frequency Transistor MRF587 . . . designed for use in hlgh-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. •


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    MRF587 MRF587 CT050 HP8542 PDF

    CATV MHW

    Abstract: MHW1172 MHW1171 MHW1221-MHW1222 MHW 254 MHW1222 motorola mhw CASE 714 MHW1221 XMD21
    Text: y?D ie î I MHW1171 MHW1172 MHW1221 MHW1222 r p f MOTOROLA k f j T h e IIP ' L in e CA TV IN PUT/O UTPUT T R U N K AM PLIFIER S LOW D ISTO R TIO N W IDEBAND A M P L IFIE R MODULE . . . designed s p e c ific a lly fo r b ro a d b a n d a p p lic a tio n s re q u irin g lo w


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    MHW1171 MHW1172 MHW1221 MHW1172 MHW1222 RF-59 CATV MHW MHW1221-MHW1222 MHW 254 motorola mhw CASE 714 XMD21 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high-gain, iow-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure —


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    CT050 MRFS87 PDF

    ATIC 59 C1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MRF587 . . . designed for use in high—gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.


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    MRF587/D MRF587 ATIC 59 C1 PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF587 The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MÄTV, and instrumentation applications. •


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    MRF587 CT050 45004B MRF587 PDF