XN1507 Search Results

XN1507 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
XN1507		Panasonic	Silicon NPN Transistor		Original	PDF
XN1507		Panasonic	Silicon NPN epitaxial planer transistor		Original	PDF
XN1507		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

XN1507 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SD0814 Abstract: 2SD814 XN01507 XN1507 Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 5 2 Parameter (Ta=25˚C)	Original	PDF	XN01507 XN1507) 2SD0814 2SD814 XN01507 XN1507
Untitled Abstract: No abstract text available Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 3 Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.	Original	PDF	XN01507 XN1507) 2SD0814 2SD814)
2SD814 Abstract: XN1507 Text: Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD814 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element	Original	PDF	XN1507 2SD814 2SD814 XN1507
2SD0814 Abstract: 2SD814 XN01507 XN1507 Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD0814(2SD814) x 2 elements +0.1 +0.2 1.1 -0.1	Original	PDF	XN01507 XN1507) 2SD0814 2SD814) 2SD814 XN01507 XN1507
2SD0814 Abstract: 2SD814 XN01507 XN1507 Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element Parameter 0 to 0.1 2SD0814(2SD814) x 2 elements ■ Absolute Maximum Ratings	Original	PDF	XN01507 XN1507) 2SD0814 2SD814) 2SD814 XN01507 XN1507
Untitled Abstract: No abstract text available Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 150 V Rating Collector to emitter voltage	Original	PDF	XN01507 XN1507) 2SD0814 2SD814)
AN3962FB Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030	OCR Scan	PDF	MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
5pin marking VJ Abstract: marking AE 5pin AX05 N2211 9p marking 2SD601 Z 211H Text: ^ S 5 S S í / ^ yT — V Mini Type (5-pin) Package FET Transistors, FETs U n it : mm »•»fri i s-8:8t 0.6510.15 5 - M ( 5 îS i) /N " ^ - v ■>'■Ÿ < "J T - X 7 ( i , S£#<D$ - m m v t m -E E } v n -S 3 - 4 b 7 > > * 2 4' a (7>a^-ib ft Jfc L t i l	OCR Scan	PDF	UN2215 2SD601 2SC3130 2SB709A 2SD601A UN2112 UN2212 5pin marking VJ marking AE 5pin AX05 N2211 9p marking Z 211H