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    Y25n120d

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G Y25N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G Y 25N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4


    OCR Scan     		PDF Y25N120D/D Y25n120d

    25N120

    Abstract: Y25N120 transistor IR 324 C
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Y25N120 In su lated G a te B ip o lar T ran sisto r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is In s u la te d G a te B ip o la r T r a n s is to r IG B T u s e s a n a d v a n c e d


    OCR Scan     		PDF Y25N120 25N120 Y25N120 transistor IR 324 C