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    Untitled

    Abstract: No abstract text available
    Text: Y5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The Y5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The Y5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR

    1MX16BIT

    Abstract: 16MX1
    Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE


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    PDF 256Kx4-bit, 1MX16BIT 16MX1

    HY5117400A

    Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
    Text: Y5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The Y5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he Y5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan
    PDF HY5117400A HY5117400A Y5117400A 1AD27-10-MA HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT A1D10 HY5117400AJ60 HY5117400 AMO 0210 OH371

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


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    PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260