12350
Abstract: PS-12350 24 volt 300 AH
Text: Rechargeable Sealed Lead-Acid Battery PS-12350 12 Volt 35 Amp. Hrs. Features: Absorbent Glass Mat AGM technology for superior performance. Valve regulated, spill-proof construction. Power/volume ration yielding unrivaled energy density. Recessed fold-down handles for safe and
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PS-12350
PS-12350
12350
24 volt 300 AH
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PS6326
Abstract: No abstract text available
Text: Rechargeable Sealed Lead-Acid Battery PS-632 6 Volt 3.5 Amp. Hrs. Features: Absorbent Glass Mat AGM technology for superior performance. Valve regulated, spill proof construction allows safe operation in any position. Power/volume ratio yielding unrivaled
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PS-632
175mA
ISO9001-2000
FM39170
PS6326
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12 volts 5 AH battery
Abstract: No abstract text available
Text: Rechargeable Sealed Lead-Acid Battery PS-1208 12 Volt 0.8 Amp. Hrs. Features: Absorbent Glass Mat AGM technology for superior performance. Valve regulated, spill proof construction allows safe operation in any position. Power/volume ratio yielding unrivaled
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PS-1208
12 volts 5 AH battery
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panasonic msds
Abstract: 100AH battery charging PS-1250 battery 150 Ah 20HR
Text: 12 Volt 5.0 AH PS-1250 Features • Absorbent Glass Mat AGM technology for superior performance • Valve regulated, spill proof construction allows safe operation in any position • Power/volume ratio yielding unrivaled energy density • Rugged impact resistant ABS case and cover (UL94-HB)
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PS-1250
UL94-HB)
panasonic msds
100AH battery charging
PS-1250
battery 150 Ah
20HR
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panasonic msds
Abstract: MH20845 24 volt 300 AH 20HR
Text: PS-650LS & LF 6 Volt 5.0 AH Features • Absorbent Glass Mat AGM technology for superior performance • Valve regulated, spill proof construction allows safe operation in any position • Power/volume ratio yielding unrivaled energy density • Rugged impact resistant ABS case and cover (UL94-HB)
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PS-650LS
UL94-HB)
PS-650LF)
PS-650LS)
panasonic msds
MH20845
24 volt 300 AH
20HR
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PSC-12800A
Abstract: PS-1270 panasonic msds 20HR
Text: 12 Volt 7.0 AH PS-1270 Features • Absorbent Glass Mat AGM technology for superior performance • Valve regulated, spill proof construction allows safe operation in any position • Power/volume ratio yielding unrivaled energy density • Rugged impact resistant ABS case and cover (UL94-HB)
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PS-1270
UL94-HB)
PSC-12800A
PS-1270
panasonic msds
20HR
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A1270
Abstract: 55C160 APT84M50B2 APT84M50L MIC4452
Text: APT84M50B2 APT84M50L 500V, 84A, 0.065Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT84M50B2
APT84M50L
O-264
O-247
A1270
55C160
APT84M50B2
APT84M50L
MIC4452
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HA5013
Abstract: HA5013IB HA5013IP HA-5020 HA5025EVAL HP4195 BUT27
Text: HA5013 Data Sheet September 1998 File Number 3654.4 Triple, 125MHz Video Amplifier Features The HA5013 is a low cost triple amplifier optimized for RGB video applications and gains between 1 and 10. It is a current feedback amplifier and thus yields less bandwidth
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HA5013
125MHz
HA5013
125MHz
HA5013IB
HA5013IP
HA-5020
HA5025EVAL
HP4195
BUT27
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MIC4452
Abstract: APT8M100B APT8M100S
Text: APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT8M100B
APT8M100S
MIC4452
APT8M100B
APT8M100S
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8114
Abstract: APT12M80B APT12M80S MIC4452
Text: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT12M80B
APT12M80S
8114
APT12M80B
APT12M80S
MIC4452
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APT9M100B
Abstract: APT9M100S MIC4452
Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT9M100B
APT9M100S
APT9M100B
APT9M100S
MIC4452
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APT7M120B
Abstract: APT7M120S MIC4452
Text: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT7M120B
APT7M120S
APT7M120B
APT7M120S
MIC4452
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APT56M50B2
Abstract: APT56M50L MIC4452
Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT56M50B2
APT56M50L
O-264
O-247
APT56M50B2
APT56M50L
MIC4452
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APT58M80J
Abstract: MIC4452
Text: APT58M80J 800V, 60A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT58M80J
E145592
APT58M80J
MIC4452
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Untitled
Abstract: No abstract text available
Text: LNK584-586 LinkZero-AX Zero Standby Consumption Integrated Off-Line Switcher Product Highlights Lowest System Cost with Zero Standby Consumption • Simple system configuration provides zero consumption standby/Power-Down with user controlled wake up • Very tight IC parameter tolerances improves system manufacturing yield
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LNK584-586
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Untitled
Abstract: No abstract text available
Text: EMI Ferrite Chip Beads Steward’s surface mount ferrite chips provide compact, cost effective EMI filtering for densely packed PCB designs. The small footprint enables placement very close to troublesome high frequency devices. Our proprietary SMT construction yields
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762mm
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gunn diode ghz s-parameter
Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.
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AN1035
p-7065.
AN1023,
gunn diode ghz s-parameter
impatt diode
impatt
C band FET transistor s-parameters
fet dro 10 ghz
x-band dro
california bearing ratio test
DRO lnb
25 MHz $ pin Crystal Oscillators THrough hole type
Dielectric Resonator Oscillator DRO
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HZ1206E601R-00
Abstract: HZ0603B102R-00 hz0805e601r-00 HZ0603 HZ0402A601R-00 HZ0603C601R hz0603c601r-00 HZ0805C202R-00 HZ0402 HZ0805D102R-00
Text: Stewards surface mount ferrite chips provide compact, cost effective EMI filtering for densely packed PCB designs. The small footprint enables placement very close to troublesome high frequency devices. Our proprietary SMT construction yields rugged components with
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spe74
HZ0603
HZ0402
HZ1206E601R-00
HZ0603B102R-00
hz0805e601r-00
HZ0603
HZ0402A601R-00
HZ0603C601R
hz0603c601r-00
HZ0805C202R-00
HZ0402
HZ0805D102R-00
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MLG1608A2N7S
Abstract: MLG1608A MLG1608A3N9S
Text: Multilayer Chip Inductors Magnetic Shielded For UHF Band MLG Series MLG1608 TYPE FEATURES • High self-resonant frequency. • Multilayer monolithic construction yield high reliability. APPLICATIONS For high frequency applications including mobile phones,
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MLG1608
100MHz
300MHz
500MHz
1000MHz
4291A
6193A
HP8720C
TYPE7561
MLG1608A2N7S
MLG1608A
MLG1608A3N9S
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63S081
Abstract: No abstract text available
Text: £1 Advanced Micro Devices 53/63S881/A High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable iltanlum-tungsten fuses TIW guaran tee greater than 98% programming yields
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53/63S881/A
1024x8
30-ns
24-pin
600-mil
53/63S881
53/63S881A
63S081
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Untitled
Abstract: No abstract text available
Text: Am27S18/19 256-Bit 32 x 8 Bipolar PROM > DISTINCTIVE CHARACTERISTICS 3 •Nj Ultra high speed Highly reliable, ultra-fast programming Piatinum-Silicide fuses High-programming yield • Low-current PNP inputs • High-current open collector and three-state outputs
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Am27S18/19
256-Bit
27Sl8/19
32-words
Am27S18
Am27S19
27LSl8/19.
BD006140
27S19SA
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dk qs
Abstract: CLTO20
Text: Am27S31 512 X 8 Bipolar PROM High Low High Fast • • • • programming yield current PNP inputs current and three-state outputs chip select GENERAL DESCRIPTION of satisfying the requirements of a variety of microprogrammable controls, mapping functions, code conversion,
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Am27S31
512-words
MIL-STD-883,
dk qs
CLTO20
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Untitled
Abstract: No abstract text available
Text: Am27Sl2/13 a 2,048-Bit 512 x 4 Bipolar PROM > 3 DISTINCTIVE CHARACTERISTICS ro •«j • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs
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Am27Sl2/13
048-Bit
Am27S12/13
Am27S12
Am27S13
BD006400
Am27S12A
Am27S13A
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ecl pal 16 macrocells
Abstract: HD b3c
Text: AmPAL*10H20EG8/AmPAL10020EG8 IMOX-III ECL Programmable Array Logic PRELIMINARY Asynchronous-RESET and PRESET capability Power-up RESET capability PRELOAD for improved testability Special designed-ln test features for full AC and DC testing Platinum-silicide fuses ensure high programming yield,
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10H20EG8/AmPAL10020EG8
0H20EV8
AmPAL10020EV8
6176A)
ZL30A
AmPAL10H20EG8/AmPAL10020EG8
ecl pal 16 macrocells
HD b3c
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