ro4003
Abstract: FPD1500SOT89 RO-4003 5.8ghz
Text: EB1500SOT89AJ FPD1500SOT89 5.2GHz TO 5.8GHz EVALUATION BOARD FEATURES • 26dBm Output Power • 10dB Gain ¥ 1.6dB Noise Figure @ 5V, 200mA ¥ 42dBm OIP3 ¥ SOT89 Surface Mount Package DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
|
Original
|
PDF
|
EB1500SOT89AJ
FPD1500SOT89
26dBm
200mA
42dBm
85GHz.
FPD1500SOT89;
1500m
20mil
RO4003
RO-4003
5.8ghz
|
c3v9
Abstract: c9v1 c5v6 BZV49 93 SOT89 c24 Zener c22 zener C8V2 c4v7 x5 sot89
Text: BZV49 SERIES ISSUE 4 - AUGUST 1996 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . Zener Voltage VZ at IZ=2mA Type VOLTS BZV49: Nom. BZV49 SERIES SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES Differential Resistance rZ at IZ=2mA Ω Temperature Coefficient SZ at IZ=2mA
|
Original
|
PDF
|
BZV49
BZV49:
c3v9
c9v1
c5v6
BZV49
93 SOT89
c24 Zener
c22 zener
C8V2
c4v7
x5 sot89
|
CL10B104KONC
Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200
Text: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the
|
Original
|
PDF
|
AN022
SGA-9289
EAN-101535
CL10B104KONC
AN022
MCH185A220JK
la 4440 amplifier circuit diagram 300 watt
MCH185A390JK
MCH185A100DK
MCH185A4R7CK
Sirenza amplifier SOT-89
MCR03J200
|
Z550
Abstract: Fp2189 AVX 0603 MTBF
Text: FP2189 The Communications Edge TM Advanced Datasheet 1 Watt HFET Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description
|
Original
|
PDF
|
FP2189
FP2189
OT-89
1-800-WJ1-4401
Z550
AVX 0603 MTBF
|
AN022
Abstract: Stanford Microdevices 4 ghz MCH18 ML200C SGA-9289
Text: DESIGN APPLICATION NOTE - AN022 SGA-9289 Amplifier Application Circuits Abstract SGA-9289 Stanford Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. The amplifier is manufactured using the latest Silicon Germanium Heterostructure
|
Original
|
PDF
|
AN022
SGA-9289
SGA-9289
EAN-101535
AN022
Stanford Microdevices 4 ghz
MCH18
ML200C
|
CL10B104KONC
Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021
Text: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the
|
Original
|
PDF
|
AN021
SGA-9189
EAN-101534
CL10B104KONC
MCR03J100
MCH185A4R7CK
AN021
MCR03*J100
MCH185A390JK
Sirenza amplifier SOT-89
ECB-102216-B
AN-021
|
IPC 6012
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 3, 8/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
|
Original
|
PDF
|
MMG3003NT1
MMG3003NT1
IPC 6012
|
135-869
Abstract: ML200C transistor a114 diagram
Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range
|
Original
|
PDF
|
MMG3003NT1
MMG3003NT1
135-869
ML200C
transistor a114 diagram
|
AVX 0603 MTBF
Abstract: high power FET transistor s-parameters FP2189 GETEK RF transistors with s-parameters FET transistors with s-parameters RF power transistors with s-parameters 115Z4 transistor z3
Text: FP2189 The Communications Edge TM Preliminary Product Information 1 Watt HFET Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package
|
Original
|
PDF
|
FP2189
OT-89
FP2189
1-800-WJ1-4401
AVX 0603 MTBF
high power FET transistor s-parameters
GETEK
RF transistors with s-parameters
FET transistors with s-parameters
RF power transistors with s-parameters
115Z4
transistor z3
|
SHF-0189
Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet
Text: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET
|
Original
|
PDF
|
AN-031
SHF-0189
EAN-101798
SHF-0289
AN-031
s-parameter file of SHF-0289 by Sirenza
ML200C
H H L C9
LL1608-FS6N8J
amplifier shf
MCH185A220J
ef SOT-89 hfet
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 8, 2/2012 MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range
|
Original
|
PDF
|
MMG3003NT1
MMG3003NT1
|
RF transistors with s-parameters
Abstract: 2.5 GHz RF power transistors with s-parameters 400 watt circuit diagram 51Z4 high power FET transistor s-parameters WJ transistor
Text: FP1189 The Communications Edge TM Advanced Datasheet ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description
|
Original
|
PDF
|
FP1189
OT-89
FP1189
1-800-WJ1-4401
RF transistors with s-parameters
2.5 GHz RF power transistors with s-parameters
400 watt circuit diagram
51Z4
high power FET transistor s-parameters
WJ transistor
|
RF transistors with s-parameters
Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900
Text: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package
|
Original
|
PDF
|
FP1189
OT-89
FP1189
1-800-WJ1-4401
RF transistors with s-parameters
high power FET transistor s-parameters
c4 sot-89
4C922
LL1608-FH3N3S
FP1189-PCB-900
|
Z5 1512
Abstract: No abstract text available
Text: Document Number: MMG3014NT1 Rev. 4, 8/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is internally input
|
Original
|
PDF
|
MMG3014NT1
MMG3014NT1
Z5 1512
|
|
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input
|
Original
|
PDF
|
MMG3014NT1
MMG3014NT1
|
Z5 1512
Abstract: C0805C209J5GAC
Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 2, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input
|
Original
|
PDF
|
MMG3014NT1
MMG3014NT1
Z5 1512
C0805C209J5GAC
|
transistor 4287 AB
Abstract: ML200DSS k 3116 transistor fet Rohm part marking Z7 Fp2189
Text: FP2189 The Communications Edge TM 1-Watt HFET Advanced Product Information Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTTF >100 Years Product Description Functional Diagram
|
Original
|
PDF
|
FP2189
OT-89
FP2189
1-800-WJ1-4401
transistor 4287 AB
ML200DSS
k 3116 transistor fet
Rohm part marking Z7
|
MG271H
Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Text: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
|
Original
|
PDF
|
MMG20271H9
OT--89
MMG20271H9T1
MMG20271H9
MG271H
marking s22
GRM1555C1H1R0BA01
mmic C5 sot 86
GRM1555C1H1R2BA01
GRM1555C1H1R8BA01
|
Untitled
Abstract: No abstract text available
Text: Document Number: MMG15241H Rev. 1, 4/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,
|
Original
|
PDF
|
MMG15241H
MMG15241HT1
MMG15241H
|
MG241H
Abstract: MMG15241HT1 GRM188R71H104KA93D ML200C GJM1555C1H100JB01D
Text: Freescale Semiconductor Technical Data Document Number: MMG15241H Rev. 1, 4/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,
|
Original
|
PDF
|
MMG15241H
MMG15241HT1
MMG15241H
MG241H
MMG15241HT1
GRM188R71H104KA93D
ML200C
GJM1555C1H100JB01D
|
GRM188R71H104KA93D
Abstract: MG241H mmg15241 GJM1555C1HR20BB01D GJM1555C1H1R0CB01D 0603CS-6N8XJLW GJM1555C1H100JB01D MMG15241HT1 GRM188RC1H560GA01D MMG15241H
Text: Freescale Semiconductor Technical Data Document Number: MMG15241H Rev. 0, 12/2010 Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,
|
Original
|
PDF
|
MMG15241H
MMG15241HT1
MMG15241H
GRM188R71H104KA93D
MG241H
mmg15241
GJM1555C1HR20BB01D
GJM1555C1H1R0CB01D
0603CS-6N8XJLW
GJM1555C1H100JB01D
MMG15241HT1
GRM188RC1H560GA01D
|
Untitled
Abstract: No abstract text available
Text: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
|
Original
|
PDF
|
MMG20271H9
MMG20271H9T1
MMG20271H9
OT--89
|
C5V1
Abstract: C4V7 c24 zener BZV4 BZV49
Text: I SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES ISSUE 3 - NOVEMBER 1995 BZV49 SERIES O_ ' ABSOLUTE MAXIMUM RATINGS as per Electron Coc ing Sytem . PARAMETER SYMBOL Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb=25“C
|
OCR Scan
|
PDF
|
BZV49
BZV49:
C5V1
C4V7
c24 zener
BZV4
|
bzv49
Abstract: c4v3 c8v2 C3939
Text: SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES iSSUE 3 - NO VEM BER 1995 O ABSOLUTE MAXIMUM RATINGS as per Electron Coding Sytemj. PARAMETER SYMBOL Voltage Range V-, N om inal Tolerance C M axim um Forward Current Power Dissipation at Tamb=25'-'C VALUE I 3.9 to 43
|
OCR Scan
|
PDF
|
BZV49:
bzv49
c4v3
c8v2
C3939
|