zener diode z10
Abstract: z10-130 Z10-200 Z10-150 z1031 zener z10 Z10-160 Z10-110 Z10-120 Z10-140
Text: Z10-110 THRU Z10-330 FRONTIER ELECTRONICS CO., LTD. 1WATT ZENER DIODE FEATURES ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! LOW ZENER IMPEDANCE ! EXCELLENT CLAMPING CAPABILITY 1.0 25.4 MIN .034(0.9) .028(0.7) .205(5.2)
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Z10-110
Z10-330
MIL-STD-202,
CASE-DO41
300us
zener diode z10
z10-130
Z10-200
Z10-150
z1031
zener z10
Z10-160
Z10-110
Z10-120
Z10-140
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B84320-Z10-H35
Abstract: B84320-Z10-H33
Text: EMP Protection Units B84320-Z10-H33 Analog Communication and Control Lines B84320-Z10-H35 EMP-Schutzeinheiten General The EMP protection unit is sequenced, i.e. to use simultaneously the benefits of inert-gas-filled surge arresters extremely high surge capability and of varistors (fast response). They are isolated
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B84320-Z10-H33
B84320-Z10-H35
B84320-Z10sent
B84320-Z10-H35
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SNP-Z101
Abstract: SNP-Z103 SNP-Z109 Z109 snp-z107 Z107 SNP-Z10T Z103 SNP-Z10 SNPZ10
Text: General Purpose Universal PFC + 100W SNP-Z10 Series Description: Open frame size of 3" X 5" has become an industrial standard for more than 10 years. The power density is around 2.0 watts/ cu.in. at very beginning and then stays at 3.0 watts/cu.in. for a
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SNP-Z10
SNPZ10
SNP-Z106
V/20A
SNP-Z107
SNP-Z108
SNP-Z109
SNP-Z10T
SNP-Z101
SNP-Z103
Z109
Z107
Z103
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Untitled
Abstract: No abstract text available
Text: Z10-110~390 Description Mechanical Dimensions JEDEC D0-41 1.00 Min. .080 .107 DO-41 .031 typ. Dimensions in inch eatures ¬ For surface mounted applications ¬ 1.0 W power dissipation ¬ Ideally suited for automated assembly processes ¬ Excellent Clamping Capability
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Z10-110
D0-41
DO-41
MIL-STD-202
300us
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Untitled
Abstract: No abstract text available
Text: 8798_AA's Vectron 05/30/02 3:12 PM Page 85 Frequency Translation Products FX-104 Features 8! A1P FC- In! D 4 ut! z10 FX- 44 MH Hz - O 19. .08 M 622 • • • • • 6 002 Output frequencies up to 777.6 MHz Low Jitter PECL Output Locked to specified Input frequency, e.g. 8 kHz
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FX-104
FX-101
FX-101/102
1-88-VECTRON-1
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philips ph 116 capacitors
Abstract: Philips electrolytic 116 Philips capacitor 116 mbc182 philips ELECTROLYTIC capacitors RLL116 RML MARKING CODE Z100 philips 116 capacitors 116 RLL capacitors
Text: Philips Components Product specification Non-solid Al - electrolytic capacitors Radial Long Life RLL 116 FEATURES • Polarized aluminium electrolytic capacitors, non-solid handbook, 4 columns • Radial leads, cylindrical aluminium case, all-insulated light blue
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MAM074
philips ph 116 capacitors
Philips electrolytic 116
Philips capacitor 116
mbc182
philips ELECTROLYTIC capacitors
RLL116
RML MARKING CODE
Z100
philips 116 capacitors
116 RLL capacitors
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MBC182
Abstract: 116 RLL capacitors 116 RLL
Text: BCcomponents DATA SHEET 116 RLL Aluminum electrolytic capacitors Radial Long Life Product specification Supersedes data of January 1998 File under BCcomponents, BC01 2000 Jan 18 BCcomponents Product specification Aluminum electrolytic capacitors Radial Long Life
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CCC161
EN130300
MBC182
116 RLL capacitors
116 RLL
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philips ph 116 capacitors
Abstract: philips ph 116 capacitor Philips electrolytic 116 MBC182 philips 116 capacitors Philips capacitor 116 MGB146 philips ELECTROLYTIC capacitors philips ELECTROLYTIC capacitors marking code group RML MARKING CODE
Text: Philips Components Product specification Aluminium electrolytic capacitors Radial Long Life 116 RLL FEATURES • Polarized aluminium electrolytic capacitors, non-solid handbook, 4 columns • Radial leads, cylindrical aluminium case, all-insulated light blue
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MAM074
philips ph 116 capacitors
philips ph 116 capacitor
Philips electrolytic 116
MBC182
philips 116 capacitors
Philips capacitor 116
MGB146
philips ELECTROLYTIC capacitors
philips ELECTROLYTIC capacitors marking code group
RML MARKING CODE
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diagram 3 phase heat press
Abstract: SSR G SG-24F SF92 SSR 131
Text: SG-24F THREE PHASE SOLID STATE RELAY 10 THRU 25 AMPS 36 TO 440 VRMS FEATURES • • • • • • • • Photo isolation LED status indicator Up to 800V blocking voltage Both “Zero Voltage” and phase controllable “Random” Switching versions High surge capability
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SG-24F
7/16/08W
SF92B-150
diagram 3 phase heat press
SSR G
SG-24F
SF92
SSR 131
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PDF
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SG-24F
Abstract: diagram 3 phase heat press ssr diagram
Text: SG-24F THREE PHASE SOLID STATE RELAY 10 THRU 25 AMPS 36 TO 440 VRMS FEATURES • • • • • • • • Photo isolation LED status indicator Up to 800V blocking voltage Both “Zero Voltage” and phase controllable “Random” Switching versions High surge capability
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SG-24F
2/7/03W
SF92B-150
SG-24F
diagram 3 phase heat press
ssr diagram
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PDF
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TRANSISTOR Z10
Abstract: h8 ss 125 transistor LTZ1000 LT 745 S 8 pin ic lm 745
Text: _ LTZ1000/LTZ1000A TECHNOLOGY Ultra Precision Reference L U IL / \ k D € S C R IP T IO n F€ A TU R € S T h e LT Z10 0 0 and LT Z 10 0 0 A are ultra stable tem perature • 1.2/iVp-p N o is e controllable references. Th e y are designed to provide 7 V
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LTZ1000/LTZ1000A
05ppm
LTZ1000/LTZ1000A
LTZ1000
LTZ1000A
TRANSISTOR Z10
h8 ss 125 transistor
LT 745 S
8 pin ic lm 745
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BUZ10M
Abstract: BUZ10
Text: 89D 7 8 2 0 0 6 3 6 7 2 5 4 MOTOROLA SC X S T R S / R F> AT MOTOROLA D E |t.3 b ? a S 4 GD7fl20Q - r - ß ? - // Order this data sheet by BUZ10/D 1 S E M IC O N D U C T O R TECHNICAL DATA BU Z10 P o w e r F ield E ffe c t T r a n s is t o r N-Channel Enhancement
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GD7fl20Q
BUZ10/D
MK145BP,
BUZ10
C46I52
BUZ10M
BUZ10
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Untitled
Abstract: No abstract text available
Text: 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTIO N The TC511664J/Z is th e new generation dynam ic RAM organized 65,536 words by 16 bits. The TC51 1664J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit tech n iq u es to provide wide operating m argins, both in te rn a lly and to the system user. M ultiplexed
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TC511664J/Z
1664J/Z
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A302 x6
Abstract: TC5116
Text: 65,536 W O R D x 16 BIT D Y N A M I C R A M DESCRIPTION T h e T C 5 1 1 6 6 4 J / Z i s t h e n e w g e n e r a t i o n d y n a m i c R A M o r g a n i z e d 6 5 , 5 3 6 w o r d s by 16 bi t s. The T C 5 1 1 6 6 4 J / Z u t i l i z e s T O S H I B A ' S C M O S S i l i c o n g a t e p r o c e s s t e c h n o l o g y a s w el l a s a d v a n c e d c i r c u i t
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7A07
Abstract: w9109 jcs5 tc511665
Text: 65,5 3 6 W O RD X 1 6 BIT D Y N A M I C R A M T his is advanced information and specifica tions are subject to change without notice. * D ES CR IP TION The T C 5 1 1 6 6 5 J^ . is the new generation dynamic RAM organized 65,536 words by 16 bits. The T C 511665J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit
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511665J/Z
TC511665J/Z
7A07
w9109
jcs5
tc511665
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toshiba 7 pin a215
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TC51401J/Z-80, TC514101J/Z-1Ü DESCRIPTION The TC514 LOIJ/Z is the new generation dynamic RAM organized A, 194,304 words by 1 bit. The TC514101J/Z utilizes TO S H I B A ' S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and
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TC51401J/Z-80,
TC514101J/Z-1Ü
TC514
TC514101J/Z
TC514101J/Z-10
TC51401
J/Z-80.
TC514101
toshiba 7 pin a215
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murata npo
Abstract: 32M marking z10 marking Z10.0 marking z10
Text: CERAMIC TRIMMER CAPACITORS CHIP TRIMMER CAPACITORS TZV02/TZVX2 SERIES ^ muffata //w w a tc r in Electronics The latest generation o f chip trim m ing capacitors uses M urata Electronic's tech nolog y advancem ents in m onolithic construction to ob tain an ultra stable,
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TZV02/TZVX2
TZV02
180mm
330mm
TZV02)
C-22-C
murata npo
32M marking
z10 marking
Z10.0
marking z10
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Z80 INTERFACING TECHNIQUES
Abstract: No abstract text available
Text: 4,194,304 WORD X 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514100J/Z
TC514100J/Z.
00JyZ-60
Z80 INTERFACING TECHNIQUES
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TC514100
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TC514100J/Z-80, TC5141OOJ/Z-1Û DESCRIPTION The TC514I00J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and
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TC514100J/Z-80,
TC5141OOJ/Z-1Û
TC514I00J/Z
TC514100J/Z
TC514100J/Z-10
TC5141OOJ/Z-10
TC514100
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Z80 ADC
Abstract: TC514100 Z80 INTERFACING TECHNIQUES uras 14 Z80 FIO UAA 180 dot mode
Text: TOSHIBA MEMORY E lectronic C omponents B usiness S ector 4 ,1 9 4 ,3 0 4 WORD X 1 BIT DYNAM IC RAM T C 514 1 0 0 J /Z -8 0 T C 514 1 OOJ/Z-10 DESCRIPTION The TC514100J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514100
J/Z-80
TC5141OOJ/Z-10
TC514100J/Z
Z80 ADC
Z80 INTERFACING TECHNIQUES
uras 14
Z80 FIO
UAA 180 dot mode
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PDF
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TC514400
Abstract: TCWP
Text: • ^ Sill - . ■■- - - ^ M P M R m Ê t o -.i— ■ SfflMfaWWW« mtssSsm M — l ■ ¡■ ¡ p s i 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4
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TC514400J/Z
TC514400J/Z-80
TC514400J/Z--10
TC514400
TCWP
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PDF
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Untitled
Abstract: No abstract text available
Text: 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514100J/Z
TC514100J/Z.
TC5141OOJ/Zâ
TC5141OOJ/Z-10
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TC514 1 02J/Z-80, TC514102J / Z - 1C DESCRIPTION T h e T C 5 1 4 1 0 2 J / Z is the n e w g e n e r a t i o n d y n a m i c R A M o r g a n i z e d 4 , 1 9 4 , 3 0 4 w o r d s b y 1 bit. T h e T C 5 1 4 1 0 2 J / Z u t i l i z e s T O S H I B A ' S C M O S S i l i c o n g a t e p r o c e s s t e c h n o l o g y as w e l l
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TC514
02J/Z-80,
TC514102J
TC514102J/Z-80,
TC514102J/Z-10
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA _ MEMORY _ E lectronic C omponents B usiness S ector _ 4,194,304 W O R D X 1 B IT D Y N A M IC RAM T C 5 1 4 1 0 1 J/ Z -8 0 T C 5 1 4 1 0 1 J / Z -1 0 DESCRIPTION The TC514101J/Z is the new generation dynamic RAM organized 4,194,304 words by 1
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TC514101J/Z
MST-W-0030
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