RO4350B
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
500ating
8/2013Semiconductor,
RO4350B
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ATC100A101JP150
Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
DataMRFG35010AN
ATC100A101JP150
GT5040
MRFG35010ANT1
ATC100B101JP500XT
080514R7BBS
ATC100A100JP150X
ATC100A101JP150XT
Transistor Z14
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Untitled
Abstract: No abstract text available
Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
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MMRF1021N
MMRF1021NT1
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Z6 3pin
Abstract: J262 AFT09MS007NT1
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
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AFT09MS007N
AFT09MS007NT1
Z6 3pin
J262
AFT09MS007NT1
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N/A9M07
Abstract: No abstract text available
Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from
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AFT09MS007N
AFT09MS007NT1
N/A9M07
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A5M0
Abstract: IC 2 5/A5M06
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
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AFT05MS006N
AFT05MS006NT1
A5M0
IC 2 5/A5M06
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100B102JT50XT
Abstract: 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor
Text: RF Power Field Effect Transistor MRF284LR1 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio
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MRF284LR1
MRF284
100B102JT50XT
100B120JT500XT
100B100JT500XT
CDR33BX104AKYS
MRF284
MRF284LR1
T491X226K035AT
100B510JT500XT
A04T-5
microstrip resistor
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MOSFET marking Z5
Abstract: 56590653B z14 b marking Freescale MARKING W3
Text: Document Number: MRF284 Rev. 18, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF284LSR1 Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
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MRF284
MRF284LSR1
MOSFET marking Z5
56590653B
z14 b marking
Freescale MARKING W3
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smd j3y
Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd j3y
SOT89 MARKING CODE
SMD MARKING CODE j3y
SOT-23 J3Y
j3y smd
smd code marking wl sot23
k72 sot-23
marking f5 sot-89
smd 2TY
SOT-23 MARKING ka6
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A5M06
Abstract: Transistor Z17
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
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AFT05MS006N
AFT05MS006NT1
A5M06
Transistor Z17
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
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MRF284
MRF284LR1
MRF284LSR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
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MRF284
MRF284LR1
MRF284LSR1
MRF284
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marking amplifier j02
Abstract: CDR33BX104AKWS MRF284 MRF284LR1 MRF284LSR1
Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 17, 5/2006 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
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MRF284
MRF284LR1
MRF284LSR1
MRF284LR1
marking amplifier j02
CDR33BX104AKWS
MRF284
MRF284LSR1
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diode zener c26
Abstract: A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570NT1 MRF1570T1 mrf1570
Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 8, 9/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570N
MRF1570NT1
MRF1570FNT1
MRF1570NT1
diode zener c26
A113
AN211A
AN215A
AN721
MRF1570FNT1
MRF1570N
MRF1570T1
mrf1570
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zener diode marking c24
Abstract: transistor c36 j063
Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 7, 5/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570N
MRF1570NT1
MRF1570FNT1
MRF1570N
zener diode marking c24
transistor c36
j063
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF1570T1 Rev. 6, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF1570T1
MRF1570NT1/FNT1.
MRF1570FT1
MRF1570T1
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150 watts power amplifier layout
Abstract: 3.40 pf capacitor marking Z4 MOTOROLA 934 zener diode marking 4x A113 AN211A AN215A AN721 MRF1570FT1
Text: Freescale Semiconductor Technical Data Document Number: MRF1570T1 Rev. 6, 5/2006 Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF1570T1
MRF1570NT1/FNT1.
MRF1570FT1
MRF1570T1
150 watts power amplifier layout
3.40 pf capacitor
marking Z4
MOTOROLA 934
zener diode marking 4x
A113
AN211A
AN215A
AN721
MRF1570FT1
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A9M15
Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136
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AFT09MS015N
AFT09MS015NT1
A9M15
AFT09MS015N
TRANSISTOR Z10
D55295
815 transistor
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Untitled
Abstract: No abstract text available
Text: Z en er Diode mini^eei' BZX84C and MMBZ Series ±5% Volt Part Markings Type BZX84 Type MMBZ B Z X 84 C 2 V 4 B Z X 84 C 2 V 7 M M B Z 5221B M M B Z 5223B M M B Z 5225B M M B Z 5226B M M B Z 5228B M M B Z 5229B M M B Z 5230B M M B Z5231B M M B Z 5232B M M B Z 5234B
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BZX84C
BZX84
5221B
5223B
5225B
5226B
5228B
5229B
5230B
Z5231B
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b2t52c43
Abstract: marking s47 B2T52-C43 BZT52C12 B2T52-C7v5
Text: Surface M ount Zeners m 410mW Zener Diodes/SOD123_ Type Number Marking Code Zener Voltage Range* _N N Izj @ Zzi VR !zm O hm s mA O hm s mA %/°C V o lts mA 1 -0.065 -0.060 -0.055 = 5m A @ •st N TC Vz Volts @ Izt * Min Reverse Maximum Typical Temperature
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410mW
Diodes/SOD123_
b2t52c43
marking s47
B2T52-C43
BZT52C12
B2T52-C7v5
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zener y11
Abstract: zener 472
Text: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N
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Diodes/SOT23
zener y11
zener 472
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