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    Z25 TRANSISTOR Search Results

    Z25 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    Z25 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 1, 8/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 AFT05MP075NR1

    Z25 transistor

    Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1

    transistor B 764

    Abstract: ATC600F150JT250XT 0051A
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT09MP055N AFT09MP055NR1 AFT09MP055GNR1 AFT09MP055NR1 transistor B 764 ATC600F150JT250XT 0051A

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 AFT05MP075NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1

    atc 17-25

    Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, atc 17-25 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027

    MRFE6VP8600H

    Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20
    Text: Document Number: MRFE6VP8600H Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20

    Z25 transistor

    Abstract: Z27 transistor
    Text: Document Number: MHT1001H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1001HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.


    Original     		PDF MHT1001H MHT1001HR5 Z25 transistor Z27 transistor

    C3225X7R2A225KT

    Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0

    ATC600F241JT

    Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, ATC600F241JT GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12

    Untitled

    Abstract: No abstract text available
    Text: ISL21009 Data Sheet PRELIMINARY October 25, 2006 Precision, Low Noise FGA Voltage References FN6327.0 Features • Output Voltages . . . . . . . . . . . . . . . . . . . . . .1.25V, 2.500V The ISL21009 FGA™ voltage references are extremely low power, high precision, and low noise voltage references


    Original     		PDF ISL21009 FN6327 ISL21009

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

    MRF5P21180HR6

    Abstract: MRF5P21180 J1105
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21180HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P21180HR6 MRF5P21180 J1105

    TAJE226M035

    Abstract: 200B103MW
    Text: Freescale Semiconductor Technical Data Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P20180HR6 TAJE226M035 200B103MW

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF IntegrF19120 MRF19120S MRF19120

    capacitor 226 35K

    Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF21120 MRF21120S capacitor 226 35K 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k

    MRF9180R6

    Abstract: rf push pull mosfet power amplifier 865 marking amplifier c11b3
    Text: Freescale Semiconductor Technical Data Rev. 9, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF Hig9180R6 MRF9180R6 rf push pull mosfet power amplifier 865 marking amplifier c11b3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120 MRF19120S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180S

    MRF9120

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9120 MRF9120S

    226 35K

    Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21120 226 35K 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k

    93F2975

    Abstract: MRF9120S MRF9120
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9120 MRF9120S 93F2975

    Z25 transistor

    Abstract: No abstract text available
    Text: G L SGS-THOMSON m B U Z25 ir a « » N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ25 Voss 100 V ^DS on 0.1 Q Id 19 A • 100 VOLTS - FOR DC/DC CONVERTERS • HIGH CURRENT • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ • ULTRA FAST SWITCHING


    OCR Scan     		PDF BUZ25 Z25 transistor

    T17B

    Abstract: intel 24022
    Text: intei lntel387TM SX MATH COPROCESSOR The ambient temperature 0 a is guaranteed as long as Tc is not violated. The ambient temperature can be calculated from the 0 jc thermal resistance con­ stant from the transistor junction to the case) and 0 j a (thermal resistance from junction to ambient)


    OCR Scan     		PDF Intel387 68-pin lntel387TM Intel387TM T17B intel 24022