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    Dielectric Laboratories Inc V30BZ682M1SX

    CAP CER 6800PF 100V X7R NONS SMD
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    DigiKey V30BZ682M1SX Tray 2,800 400
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    Vishay Beyschlag HCZ682MBCDH0KR

    CAP CER 6800PF 3KV RADIAL
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    DigiKey HCZ682MBCDH0KR Bulk 4,000
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    Vishay Beyschlag HCZ682MBCDJ0KR

    CAP CER 6800PF 3KV RADIAL
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    DigiKey HCZ682MBCDJ0KR Bulk 2,400
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    Vishay Beyschlag HCZ682KBCDJ0KR

    CAP CER 6800PF 3KV RADIAL
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    Vishay Beyschlag HCZ682KBCEH0KR

    CAP CER 6800PF 3KV RADIAL
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    Z6 82 Datasheets Context Search

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    47NF

    Abstract: 600R CTR21 Z1 Transistor AG1170 Transistor z1 transistor z4 n 220R 270R 150nf
    Text: Impedance Programming the Ag1170P ZB VIN Z2 ZT1 Z3 ZT2 Z5 Z1 Z4 Network Balance Z6 Terminal Impedance NOTE: ZB, VIN, ZT1 and ZT2 are pin connections for the Ag1170P interface. See Ag1170 datasheet for more details. Line Impedance 600R 600R+2.16uF 370R+620R//310nF


    Original     		Ag1170P Ag1170P Ag1170 620R//310nF 820R//115nF 830R//72nF 910//150nF 560R//0 750R//150nF 510R//47nF 47NF 600R CTR21 Z1 Transistor Transistor z1 transistor z4 n 220R 270R 150nf PDF

    IN4549

    Abstract: 9305-F-081 in3340 IN3305 IN3350 Z6 82 Z6B10 Z6B11 Z6b8 Z6B13
    Text: Z6 Series 75W Voltage Regulator Diodes A range of high power zener and avalanche diodes available to BS 9305-F-081 in a hermetically sealed D05 package in both unipolar and bipolar configurations. P ,xco„1 - 7 5 W


    OCR Scan     		9305-F-081 IN3305 IN3340 IN3341 IN3350 IN4549 IN4555 BZY91C7V5 BZY91C75 Z6 82 Z6B10 Z6B11 Z6b8 Z6B13 PDF

    Untitled

    Abstract: No abstract text available
    Text: BZY91 / Z6 SERIES Voltage Range 7.5 - 400 Volts 5000 Watt Peak Pulse Power 100 Watt Steady State @ 25*C 75 Watt Steady State @ 65°C FEATURES * Glass Passivated Junction * 5000 Watt surge capability at 1 mS * Typically IR less than luA above 10V * Excellent clamping capability


    OCR Scan     		BZY91 0G00304 PDF

    Untitled

    Abstract: No abstract text available
    Text: -^ 1 I .243 6.17 4 317 8-2002 p . ' o . Z6 4 ,0 .0 3 58 . (SHEAR — -AFfe d - f NOTES M A TER IA L: BRASS FIN ISH : 999 _ UNPLATED H90 I - 20 MICROINCH MIN. HOT TIN DIP F5 4 2 - 15 MICROINCH MIN. S E L E C T GOLD IN CONTACT AREA,


    OCR Scan     		PS-44 PDF

    PJEQ

    Abstract: sje 360
    Text: 9 1. JO I 0 ßEd Z6/9 'lue iun oop sii]]. jo pue si]]. \b suoisiaojcI si]]. o], p e fq n s J8L]^n| si espi P8AJ8S8J s^ßu uv uoi^jodjoo |/\|g| 8911^8 Q p 9 SB | © y 00-Z^8^ H 88 931-1731. IP OP 9 6 P6 W H L U JJL U JU JU m im illlim illll^ ^ 98 L (> pea


    OCR Scan     		uid-891. PJEQ sje 360 PDF

    mdd 42

    Abstract: Am22A 2SA179 78L05 TT 2206 54F01 CQ242 71-51C00-D02 LZ-173 KZ206
    Text: AK 8 A H1 2 AH 8 AN 9 AL1 5 A H1 0 AL 9 AH 6 A K1 0 AN 5 AL 7 A K1 4 AL 5 AN 7 AE 1 Z6 AG3 AC 3 AJ 1 AE 3 AB 6 AB 4 AF 6 Y3 AA 1 AK 6 Z4 AA 3 AD 4 H RE Q# 0 H RE Q# 1 H RE Q# 2 H RE Q# 3 H RE Q# 4 A K1 8 A H1 6 A H1 8 AL1 9 AL1 7 A DS # A N3 1 H R EQ#[0.4]


    Original     		71-51C00-D02 mdd 42 Am22A 2SA179 78L05 TT 2206 54F01 CQ242 71-51C00-D02 LZ-173 KZ206 PDF

    sot23-6 mark code AAAM

    Abstract: AFW SOT 23 AAAM SOT23-6 afz mosfet AFU SOT23-6 SOT23-6 PMOS sot23-6 aaak aabi sot23-6 mark code AABJ MAX1963EZT120
    Text: 19-3040; Rev 2; 5/07 Low-Input-Voltage, 300mA LDO Regulators with RESET in SOT and TDFN The MAX1963/MAX1976 low-dropout linear regulators operate from a +1.62V to +3.6V supply and deliver a guaranteed 300mA continuous load current with a low 100mV dropout. The high-accuracy ±0.5% output


    Original     		300mA MAX1963/MAX1976 100mV MAX1963) MAX1976) sot23-6 mark code AAAM AFW SOT 23 AAAM SOT23-6 afz mosfet AFU SOT23-6 SOT23-6 PMOS sot23-6 aaak aabi sot23-6 mark code AABJ MAX1963EZT120 PDF

    8 bit full adder

    Abstract: LD78 CDUD4 CBU12 266 XnOR GATE BI48 CBD12 FD51 mux24 MUX82
    Text: ispLSI Macro Library Reference Manual Version 8.2 Technical Support Line: 1-800-LATTICE or 408 826-6002 IDE-ISPML-RM 8.2.1 Copyright This document may not, in whole or part, be copied, photocopied, reproduced, translated, or reduced to any electronic medium or machine-readable form without


    Original     		1-800-LATTICE licT38 SRR11 SRR14 SRR18 SRR21 SRR24 SRR28 SRR31 SRR34 8 bit full adder LD78 CDUD4 CBU12 266 XnOR GATE BI48 CBD12 FD51 mux24 MUX82 PDF

    SOT23-6 PMOS

    Abstract: T633-2 t633 ht sot23-6 SOT-23 MOSFET P-CHANNEL a1 1- mark A2 SOT-23 mosfet Z6 SOT23
    Text: 19-3048; Rev 1; 5/04 Low-Input-Voltage, 500mA LDO Regulator with RESET in SOT and TDFN The MAX1589 low-dropout linear regulator operates from a +1.62V to +3.6V supply and delivers a guaranteed 500mA continuous load current with a low 175mV dropout. The high-accuracy ±0.5% output voltage is


    Original     		500mA MAX1589 175mV MAX1589ETT130+ MAX1589ETT130 MAX1589ETT130-T MAX1589ETT150-T MAX1589ETT180-T SOT23-6 PMOS T633-2 t633 ht sot23-6 SOT-23 MOSFET P-CHANNEL a1 1- mark A2 SOT-23 mosfet Z6 SOT23 PDF

    mosfet sot23-6 maxim

    Abstract: No abstract text available
    Text: 19-3048; Rev 1; 5/04 Low-Input-Voltage, 500mA LDO Regulator with RESET in SOT and TDFN The MAX1589 low-dropout linear regulator operates from a +1.62V to +3.6V supply and delivers a guaranteed 500mA continuous load current with a low 175mV dropout. The high-accuracy ±0.5% output voltage is


    Original     		500mA MAX1589 175mV 21-0137I T633-2* MAX1589ETT300 MAX1589ETT075 MAX1589ETT150 mosfet sot23-6 maxim PDF

    PE-1206CCMC601STS

    Abstract: PE-0805CCMC900STS PE-0805CCMC361STS PE-1206CCMC102STS PE-0805CCMC121STH PE-0805CCMC121STS PE-0805CCMC181STH PE-0805CCMC181STS PE-0805CCMC670STH PE-0805CCMC670STS
    Text: 2-LINE CHIP STYLE COMMON MODE CHOKES ChipChoke CCMC Series Available in 0805 2012 and 1206 (3216) size For USB2.0 and other high speed differential signal lines (IEEE1394, LVDS) Suppression of common mode noise without attenuating the signal Large range of common mode impedance to fit with


    Original     		IEEE1394, 100MHz 0805CCMCXTH PE-0805CCMC670STH PE-1206CCMC601STS PE-0805CCMC900STS PE-0805CCMC361STS PE-1206CCMC102STS PE-0805CCMC121STH PE-0805CCMC121STS PE-0805CCMC181STH PE-0805CCMC181STS PE-0805CCMC670STH PE-0805CCMC670STS PDF

    PE-0805CCMC121STH

    Abstract: PE-0805CCMC900STS 1206 PE-0805CCMC121TTH PE-0805CCMC181STH PE-0805CCMC181TTH PE-0805CCMC670STH PE-0805CCMC670TTH PE-0805CCMC900STH PE-0805CCMC900TTH
    Text: 2-LINE CHIP STYLE COMMON MODE CHOKES ChipChoke CCMC Series Available in 0805 2012 and 1206 (3216) size For USB2.0 and other high speed differential signal lines (IEEE1394, LVDS) Suppression of common mode noise without attenuating the signal Large range of common mode impedance to fit with


    Original     		IEEE1394, 0805CCMCXTH 100MHz Resi04 PE-0805CCMC121STH PE-0805CCMC900STS 1206 PE-0805CCMC121TTH PE-0805CCMC181STH PE-0805CCMC181TTH PE-0805CCMC670STH PE-0805CCMC670TTH PE-0805CCMC900STH PE-0805CCMC900TTH PDF

    SHF-0189

    Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet
    Text: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET


    Original     		AN-031 SHF-0189 EAN-101798 SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet PDF

    RF transistors with s-parameters

    Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900
    Text: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package


    Original     		FP1189 OT-89 FP1189 1-800-WJ1-4401 RF transistors with s-parameters high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900 PDF

    MMG3014NT1

    Abstract: C0805C209J5GAC ERJ-3GEY0R00V A113 A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 0, 4/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad


    Original     		MMG3014NT1 MMG3014NT1 C0805C209J5GAC ERJ-3GEY0R00V A113 A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101 PDF

    VRD Z2015

    Abstract: ZS1012U marking z2u 685 smd mark Z2015 VRD Smd zd 153 marking ZS1 ZD022 Z208 SUPPRESSOR z2047
    Text: VRD TRANSIENT VOLTAGE SUPPRESSOR VRD is a transient voltage suppressor used for protecting electric circuits from surge voltage and thus preventing breakdown. VRD has superior surge suppression characteristics, such as extremely fast response time, very low clamping voltage,


    Original     		ZS1012D ZS1015D ZS1018D ZS1022D ZS1027D ZS1033D ZS1039D ZS1047D 8/20s 10/1000s VRD Z2015 ZS1012U marking z2u 685 smd mark Z2015 VRD Smd zd 153 marking ZS1 ZD022 Z208 SUPPRESSOR z2047 PDF

    AN022

    Abstract: Stanford Microdevices 4 ghz MCH18 ML200C SGA-9289
    Text: DESIGN APPLICATION NOTE - AN022 SGA-9289 Amplifier Application Circuits Abstract SGA-9289 Stanford Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. The amplifier is manufactured using the latest Silicon Germanium Heterostructure


    Original     		AN022 SGA-9289 SGA-9289 EAN-101535 AN022 Stanford Microdevices 4 ghz MCH18 ML200C PDF

    CL10B104KONC

    Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021
    Text: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the


    Original     		AN021 SGA-9189 EAN-101534 CL10B104KONC MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK Sirenza amplifier SOT-89 ECB-102216-B AN-021 PDF

    transformer 3A 6.3V filament

    Abstract: 269EX 269AX TRANSFORMER CT 2A CTX13 6.8z LR3902 TRANSFORMER CT 350 mA 5v 2a transformer 263AX
    Text: Plate & Filament "CLASSIC" ENCLOSED PLATE & FILAMENT POWER TRANSFORMERS • Most primaries 115 VAC, 60 Hz. except as noted in table • H.V. DC current, measured with cap. input filter (full wave - 2 diode, C.T. rectifier circuit). • Enclosed, 4 hole chassis mount (3 designs use "Z" mount)


    Original     		LR3902) transformer 3A 6.3V filament 269EX 269AX TRANSFORMER CT 2A CTX13 6.8z LR3902 TRANSFORMER CT 350 mA 5v 2a transformer 263AX PDF

    power supply 1000 watt

    Abstract: No abstract text available
    Text: FP1189 The Communications Edge TM ½-Watt HFET Advanced Product Information Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTTF >100 Years Product Description


    Original     		FP1189 OT-89 FP1189 1-800-WJ1-4401 power supply 1000 watt PDF

    CL10B104KONC

    Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200
    Text: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the


    Original     		AN022 SGA-9289 EAN-101535 CL10B104KONC AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK Sirenza amplifier SOT-89 MCR03J200 PDF

    Untitled

    Abstract: No abstract text available
    Text: Plate & Filament "CLASSIC" ENCLOSED PLATE & FILAMENT POWER TRANSFORMERS • Most primaries 115 VAC, 60 Hz. except as noted in table • H.V. DC current, measured with cap. input filter (full wave - 2 diode, C.T. rectifier circuit). • Enclosed, 4 hole chassis mount (3 designs use "Z" mount)


    Original     		LR3902) PDF

    100B330JW

    Abstract: chip resistors 0805 philips MRF9100 esd z10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		MRF9100 MRF9100R3 MRF9100SR3 100B330JW chip resistors 0805 philips esd z10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		MMRF1021N MMRF1021NT1 PDF