zip28p
Abstract: No abstract text available
Text: ZIP28-P-400-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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ZIP28-P-400-1
zip28p
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zip28p
Abstract: No abstract text available
Text: ZIP28-P-400-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.85 TYP. 3/Dec. 5, 1996
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ZIP28-P-400-1
zip28p
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ZIP28
Abstract: No abstract text available
Text: ZIP28-P-400-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.85 TYP. 3 版/96.12.5
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ZIP28-P-400-1
ZIP28
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MSM51V8222A
Abstract: SOJ28 28z2
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2L0055-28-Z2
MSM51V8222A
MSM51V8222A
214-Word
MSM51V8222A512
First-outMSM51V8222A
mil28ZIP28
SOJ430mil28SOP
SOJ28
28z2
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MSM51V8221A-40JS
Abstract: MSM51V8221A-40ZS MSM51V4221C MSM51V8221A MSM51V8221A-30JS MSM51V8221A-30ZS msm51v8221
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM514212
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2L0028-17-Y1
MSM514212
MSM514212
048-Word
MSM5142125
MSM5142121
28nsNTSCPALSECAM8fsc
048VTRIDTVEDTV
28400milZIP
ZIP28-P-400-1
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MSM514262
Abstract: MSM514262-10 MSM514262-70 MSM514262-80
Text: E2L0013-17-Y1 ¡ Semiconductor MSM514262 ¡ Semiconductor This version:MSM514262 Jan. 1998 Previous version: Dec. 1996 262,144-Word ¥ 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and
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E2L0013-17-Y1
MSM514262
144-Word
MSM514262
144-word
512-word
MSM514262-10
MSM514262-70
MSM514262-80
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MSM518221-30
Abstract: No abstract text available
Text: J2L0032-17-Y1 作成：1998年 1月 MSM518221 l 前回作成：1997年 9月 ¡ 電子デバイス MSM518221 262,214-Wordx8-Bit FIELD MEMORY n 概要 MSM518221は512行×512列×8ビットのCMOSダイナミックメモリで、高速非同期リード／ライ
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J2L003217Y1
MSM518221
214Word
MSM518221
MSM518221512
TV/VTRMSM518221
mil28ZIP28
SOJ430mil28SOP
MSM518221-30
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LGA 1156 PIN OUT diagram
Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Text: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)
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DIP8-P-300-2
DIP14-P-300-2
DIP16-P-300-2
DIP18-P-300-2
MIL-M-38510
MIL-STD-883
LGA 1156 PIN OUT diagram
QSJ-44403
LGA 1150 Socket PIN diagram
LGA 1155 Socket PIN diagram
IC107-26035-20-G
LGA 1151 PIN diagram
REFLOW lga socket 1155
IC107-3204-G
TB 2929 H alternative
LGA 1155 pin diagram
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MSM51V8222A
Abstract: MSM51V4221C MSM51V8221A MSM51V8222A-30JS MSM51V8222A-30ZS MSM51V8222A-40ZS
Text: E2L0055-28-Z2 ¡ Semiconductor MSM51V8222A ¡ Semiconductor This version: Dec. 1998 MSM51V8222A Previous version: Mar. 1998 262,214-Word ¥ 8-Bit Field Memory DESCRIPTION The OKI MSM51V8222A is a high performance 2-Mbit, 256K ¥ 8-bit, Field Memory. It is designed
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E2L0055-28-Z2
MSM51V8222A
214-Word
MSM51V8222A
MSM51V4221C
MSM51V8221A
MSM51V8222A-30JS
MSM51V8222A-30ZS
MSM51V8222A-40ZS
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MSM51V8221A
Abstract: MSM51V4221C MSM51V8221A-30JS MSM51V8221A-30ZS MSM51V8221A-40JS MSM51V8221A-40ZS
Text: E2L0054-28-Z2 ¡ Semiconductor MSM51V8221A ¡ Semiconductor This version: Dec. 1998 MSM51V8221A Previous version: Mar. 1998 262,214-Word ¥ 8-Bit Field Memory DESCRIPTION The OKI MSM51V8221A is a high performance 2-Mbit, 256K ¥ 8-bit, Field Memory. It is designed
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E2L0054-28-Z2
MSM51V8221A
214-Word
MSM51V8221A
MSM51V4221C
MSM51V8221A-30JS
MSM51V8221A-30ZS
MSM51V8221A-40JS
MSM51V8221A-40ZS
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HT 1200-4
Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Text: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional
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March/97
HT 1200-4
YAMAICHI ic234
PT740 AB
TSSOP YAMAICHI SOCKET FP-20-0.65-01
IC51-1444-1354-7
PT817
Enplas drawings
IC51-2084-1052-11
IC 7418
IC51-0242-1341
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heat treatment and transfer of heat
Abstract: mod 4 ring counter using JK flip flop MSM514262 MSM514262-10 MSM514262-70 MSM514262-80
Text: E2L0013-17-Y1 ¡ Semiconductor MSM514262 ¡ Semiconductor This version:MSM514262 Jan. 1998 Previous version: Dec. 1996 262,144-Word ¥ 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and
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E2L0013-17-Y1
MSM514262
144-Word
MSM514262
144-word
512-word
heat treatment and transfer of heat
mod 4 ring counter using JK flip flop
MSM514262-10
MSM514262-70
MSM514262-80
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MSM514212
Abstract: No abstract text available
Text: J2L0028-17-Y1 作成：1998年 1月 MSM514212 l 前回作成：1997年 9月 ¡ 電子デバイス MSM514212 5,048-Wordx8-Bit 高速ラインメモリ n 概要 MSM514212は5,048ワード×8ビット構成の高速FIFOメモリです。1ミクロン級CMOS技術を採用
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J2L0028-17-Y1
MSM514212
MSM514212
048-Word
MSM5142125
MSM5142121
28nsNTSCPALSECAM8fsc
048VTRIDTVEDTV
28400milZIP
ZIP28-P-400-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit
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TC514800AJ/AZ/AFT-70/80
TC514800AJ/AZ/AFT
TC514800A
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TC524258
Abstract: TC524259BJ C69 WML dsf03
Text: TOSHIBA TC524259B s il ic o n g a t e c m o s 262, 144WORDS X 4BITS MULTIPORT DRAM target DESCRIPTION The TC524259B is a CMOS multiport memory equipped with a 262,144-words by 4-bits dynamic random access memory RAM port and a 512-words by 4-bits static serial access memory (SAM) port. The TC524259B
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144WORDS
TC524259B
TC524259B
144-words
512-words
TC524258B
C-112
TC524258
TC524259BJ
C69 WML
dsf03
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m514262
Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Text: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.
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MSM514262
144-Word
MSM514262
512-words
SOJ28-P-400-1
50MBB
SOJ32-P-400-1
m514262
MSM514262-10
MSM514262-70
MSM514262-80
ZIP28-P-400
M5M51426
MSM51426
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TC524257P/Z/J-10, TC524257P/Z/J-12 DESCRIPTION The TC524257P/Z/J is a CMOS Multiport memory equipped with a 262,1 4 4 - w o r d x 4 bit dynamic random access memory RAM port and a 5 1 2 - w o r d x 4 bit static serial access memory(SAM) port.
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TC524257P/Z/J-10,
TC524257P/Z/J-12
TC524257P/Z/J
ZIP28-P-400
B-100
SQJ32-P-400
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Untitled
Abstract: No abstract text available
Text: JUl 8 7 June 1992 Edition 1.0A DATA SH E ET '• _ FUJITSU MB814800A-70/-80/-10 CMOS 512Kx 8 Bits Fast Page Mode Dynamic RAM The Fujitsu M B814800A is a fully decoded CMOS Dynam ic RAM DRAM that contains 4,194,304 m em ory cells accessible in 8-bit increments. The M B814800A features a fast
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MB814800A-70/-80/-10
512Kx
B814800A
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514252A 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514252A is a CMOS multiport memory composed of a 262,144-words by 4-bits dynamic random access memory, RAM port, and a 512-words by 4-bits static serial access memory, SAM
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MSM514252
144-Word
MSM514252A
144-words
512-words
SQJ28-P-400-1
SQJ32-P-400-1
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MDS150
Abstract: H68SD5 HD63B0 hn482732a-30
Text: CMOS 8-BIT SINGLE-CHIP MICROCOMPUTER H D 6 3 0 5 X ,H D 6 3 0 5 Y ,H D 6 3 P 0 5 Y USER'S MANUAL Rea PO M F TEL KENT HOUSE No 64 16 6 8 0 7 BO X 1194. R A N D ö U R G , 2125 DO VER STREET. RANDBURG 0 1 1 1 7 8 9 1 4 0 0 /2 TELEX 4 20462 FAX T V L , 2194
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 18222 262,214-Word x 8-Bit Field Memory D ESCR IPTIO N The OKI MSM518222 is a high performance 2-Mbit, 256K x 8-bit, Field Memoiy. It is designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies
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214-Word
MSM518222
MSM518222s
MSM518222
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TC524258B
Abstract: TC524258BZ TC524258BJ TC524258 tc5242588
Text: TOSHIBA TC524258B t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 4BITS MULTIPORT DRAM DESCRIPTION T he TC524258B is a CM OS m ultiport m em ory equipped with a 262,144-words by 4-bits dynam ic random access m em ory RAM port and a 5 12-words by 4-bits static serial access memory (SAM ) port. The TC524258B
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TC524258B
144WORDS
TC524258B
144-words
12-words
TC524258BZ
TC524258BJ
TC524258
tc5242588
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A194 toshiba
Abstract: No abstract text available
Text: TOSHIBA TC514800AF/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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OCR Scan
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TC514800AF/AZ/AFT-70/80
TC514800AJ/AZ/AFT
A194 toshiba
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