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    MSG36C42

    Abstract: SSSMini6 MSG33002 MSG330C4 ZJC00433BED
    Text: This product complies with the RoHS Directive EU 2002/95/EC . MSG36C42 SiGe HBT type For low-noise RF amplifier • Features  Package  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification  Two elements incorporated into one package (Each transistor is separated)


    Original     		2002/95/EC) MSG36C42 MSG330C4 MSG33002 MSG36C42 SSSMini6 MSG33002 MSG330C4 ZJC00433BED PDF

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    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . MSG36C42 SiGe HBT type For low-noise RF amplifier • Package  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification  Two elements incorporated into one package (Each transistor is separated)


    Original     		2002/95/EC) MSG36C42 MSG330C4 MSG33002 PDF