zl54
Abstract: zl58 YL162 lcd T1Z12 Diode t1z75 T1Y30 t1z47 ARM cortex R7 processor ZL56 t1z24
Text: Core Tile for ARM Cortex -R4F HBI-0196 User Guide Copyright 2009-2010 ARM Limited. All rights reserved. ARM DUI 0441B ID071010 Core Tile for ARM Cortex-R4F User Guide Copyright © 2009-2010 ARM Limited. All rights reserved. Release Information
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HBI-0196
0441B
ID071010)
ID071010
zl54
zl58
YL162 lcd
T1Z12 Diode
t1z75
T1Y30
t1z47
ARM cortex R7 processor
ZL56
t1z24
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CY7C167A
Abstract: CY7C167A-35DMB
Text: CY7C167A '0 CYPRESS 16K x 1 Static RAM Features Functional D escription • Automatic power-down when dese lected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs
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CY7C167A
CY7C167A
CY7C167Aâ
45DMB
20-Lead
300-Mil)
38-00093-C
CY7C167A-35DMB
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CY7C167A-35DMB
Abstract: No abstract text available
Text: CY7C167A CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when dese lected • CMOS for optimum speed/power • High speed — 15 ns • Low active power The CY7C167A is a high-performance CMOS static RAM organized as 16,384
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CY7C167A
CY7C167A
20-Lead
20-Lead
300-Mil)
0Q093-C
CY7C167A-35DMB
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a417b
Abstract: No abstract text available
Text: CY7B1094 CY7B1095 CY7B1096 . ä PRELIMINARY s O s r# " ‘Y P P F . Ç . ^ — SEMICONDUCTOR Features • H igh speed — tAA = 6 ns • B iC M O S fo r o p tim u m speed/pow er • Low active pow er — 900 mW • Low stan d b y pow er — 350 mW • A utom atic power-down w hen
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CY7B1094
CY7B1095
CY7B1096
CY7B1096
a417b
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