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    45DMB Search Results

    45DMB Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    54ACTQ245DM/B Rochester Electronics LLC 54ACTQ245 - Bus Driver/Transceiver, 1-Func, 8-Bit, True Output, CMOS Visit Rochester Electronics LLC Buy
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    45DMB Price and Stock

    Rochester Electronics LLC 54ACTQ245DM-B

    BUS DRIVER/TRANSCEIVER, 1 FUNC,
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    DigiKey 54ACTQ245DM-B Bulk 6,264 4
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    Teledyne e2v QP7C245A-45DMB

    PROM, ONE TIME, 2K X 8, REGISTERED, 45 N - Rail/Tube (Alt: QP7C245A-45DMB)
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    Avnet Americas QP7C245A-45DMB Tube 250
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    Teledyne e2v CY7C264-45DMB

    PROM, 8K X 8, 45 NS ACCESS TIME - Rail/Tube (Alt: CY7C264-45DMB)
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    Teledyne e2v WS57C49C-45DMB

    PROM, UV ERASABLE, 8K X 8, 45 NS ACCESS - Rail/Tube (Alt: WS57C49C-45DMB)
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    Avnet Americas WS57C49C-45DMB Tube 250
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    Teledyne e2v CY7C271-45DMB

    PROM, 32K X 8, 45 NS ACCESS TIME - Rail/Tube (Alt: CY7C271-45DMB)
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    Avnet Americas CY7C271-45DMB Tube 250
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    Find more 45DMB price and stock on Findchips.com

    45DMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2665

    Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
    Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)


    Original     		PDF CY7C266 CY7C266 600-mil-wide C2665 C2668 7c26 C2662 C266 27C64 R1250 C2666

    CY7C128A

    Abstract: transistor C128 C128A 7C128A-45 7C128A-25
    Text: 1CY 7C12 8A CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 440 mW commercial — 550 mW (military) • Low standby power


    Original     		PDF CY7C128A CY7C128A transistor C128 C128A 7C128A-45 7C128A-25

    C167A-3

    Abstract: C167A-2 CY7C167A CY7C167A-35DMB cy7c167a-35pc
    Text: CY7C167A 16K x 1 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs


    Original     		PDF CY7C167A CY7C167A 20-Lead C167A-3 C167A-2 CY7C167A-35DMB cy7c167a-35pc

    CY7C197

    Abstract: No abstract text available
    Text: CY7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable


    Original     		PDF CY7C197 256Kx1 CY7C197

    P4C148

    Abstract: P4C149
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns (P4C148 Military)


    Original     		PDF P4C148, P4C149 P4C148 P4C149 096-bit

    P4C168

    Abstract: P4C169 P4C170
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


    Original     		PDF P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C169 P4C170 P4C168

    C167A

    Abstract: C167A-2 C167A-3 CY7C167A CY7C167A-35VC
    Text: 1CY 7C16 7A CY7C167A 16K x 1 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs


    Original     		PDF CY7C167A CY7C167A C167A C167A-2 C167A-3 CY7C167A-35VC

    CY7C185A-20LMB

    Abstract: C185A CY7C185 CY7C185A 624a2
    Text: 1CY 7C18 5A CY7C185A 8K x 8 Static RAM Features • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2 and OE features


    Original     		PDF CY7C185A CY7C185A 300-mil-wide CY7C185A-20LMB C185A CY7C185 624a2

    24-Pin Plastic DIP

    Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188 P4C188L
    Text: P4C188/188L P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)


    Original     		PDF P4C188/188L P4C188/P4C188L P4C188L 22-Pin 24-Pin P4C188 15DMB 20DMB 24-Pin Plastic DIP 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188

    Untitled

    Abstract: No abstract text available
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP


    Original     		PDF P4C188/P4C188L P4C188 P4C188L 22-Pin 24-Pin P4C188 536-bit

    Untitled

    Abstract: No abstract text available
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


    Original     		PDF P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C168 P4C169

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)


    Original     		PDF P4C187/P4C187L P4C187 P4C187L P4C187L 22-Pin 24-Pin 290x490 28-Pin 350x550

    Untitled

    Abstract: No abstract text available
    Text: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation


    Original     		PDF P4C164 Oct-05 Jun-06 Aug-06 SRAM115 P4C164 28-pin SRAM115

    Untitled

    Abstract: No abstract text available
    Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK


    Original     		PDF P4C1256 --28-Pin --32-Pin 144-bit

    0148-t

    Abstract: CY7C148 CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350
    Text: CYPRESS SEMICONDUCTOR MbE D B DODbMll 2 5 0 ^ 2 b EÏCYP CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Automatic power-down when dese­ lected 7C148 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 60S m\V (military) Low standby power (7C148)


    OCR Scan     		PDF 7C148) 25-ns 0GQb411 CY7C148 CY7C149 CY7C149-45KMB CY7C149â 45LMB 0148-t CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350

    CY7C167A

    Abstract: CY7C167A-35DMB
    Text: CY7C167A '0 CYPRESS 16K x 1 Static RAM Features Functional D escription • Automatic power-down when dese­ lected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs


    OCR Scan     		PDF CY7C167A CY7C167A CY7C167Aâ 45DMB 20-Lead 300-Mil) 38-00093-C CY7C167A-35DMB

    7C192-12

    Abstract: 7C192-15 A10C CY7C191 CY7C192 CY7C192-25PC
    Text: CY7C191 CY7C192 ir CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed T he CY7C191 and CY7C192 are high­ perform ance CM OS static RAM s orga­ nized as 65,536 x 4 bits with separate I/O. Easy m em ory expansion isprovided by ac­


    OCR Scan     		PDF CY7C191 CY7C192 CY7C191) CY7C192 38-00076-J tAW15! tADvI15! 7C192-12 7C192-15 A10C CY7C192-25PC

    cy7c131-55nc

    Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
    Text: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­


    OCR Scan     		PDF CY7C130/CY7C131 CY7C140/CY7C141 CY7C140/ CY7C141 CY7C130/ CY7C131; IDT7130 IDT7140 cy7c131-55nc ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7140

    7c251

    Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
    Text: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed


    OCR Scan     		PDF CY7C251 CY7C254 7C251) 300-mil 600-mil CY7C254 384-word Y7C251 7c251 a1s smd smd code A1s smd diode code A1s 65WMB

    automaticpower change over switch circuit diagram

    Abstract: CY7C185 CY7C185A
    Text: CY7C185A '* C YPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 20 ns • CMOS for optimum speed/power T he CY7C185A is a high-perform ance CMOS static RA M organized as 8192 words by 8 bits. Easy mem ory expansion is provided by an active LO W chip enable


    OCR Scan     		PDF CY7C185A CY7C185A 300-miMilitary CY7C185Aâ 25LMB 28-Pin 35DMB 28-Lead automaticpower change over switch circuit diagram CY7C185

    Untitled

    Abstract: No abstract text available
    Text: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat­


    OCR Scan     		PDF CY7C251 CY7C254 7C251) 300-m 600-mil CY7C251 CY7C254 384-word PROMs3802 CY7C254â

    Untitled

    Abstract: No abstract text available
    Text: CY7C148 CY7C149 CYPRESS IK x 4 Static RAM Features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected 7C148 • CMOS for optimum speed/power • 25-ns access time • Low active power — 440 mW (commercial) — 605 mW (military)


    OCR Scan     		PDF CY7C148 CY7C149 7C148) 25-ns CY7C148 CY7C149 7C148

    AS15H

    Abstract: C1484 7C149
    Text: CY7C148 CY7C149 IK x 4 Static RAM Features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected 7C148 • CMOS for optimum speed/power • 25-ns access time • Low active power — 440 mW (commercial) — 605 mW (military) • Low standby power (7C148)


    OCR Scan     		PDF CY7C148 CY7C149 7C148) 25-ns AS15H C1484 7C149

    LC 7258

    Abstract: 7C266 203CE
    Text: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)


    OCR Scan     		PDF CY7C266 CY7C266 32-Pin 28-Lead 600-Mil) LC 7258 7C266 203CE