Untitled
Abstract: No abstract text available
Text: AMMC - 5620 6 - 20 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features Avago Technologies’ AMMC-5620 MMIC is a GaAs wideband amplifier designed for medium output power and
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AMMC-5620
AMMC-5620
AMMC-5620-W10
AMMC-5620-W50
5989-3934EN
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Hitachi DSA0076
Abstract: 1SV70 BB303M
Text: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB303M
ADE-208-697B
200pF,
OT-143R
BB303M
Hitachi DSA0076
1SV70
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1SV70
Abstract: BB403M Hitachi DSA00311
Text: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699A Z 2nd. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB403M
ADE-208-699A
200pF,
OT-143
BB403M
1SV70
Hitachi DSA00311
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Hitachi DSA0076
Abstract: 1SV70 BB403M
Text: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB403M
ADE-208-699B
200pF,
OT-143
BB403M
Hitachi DSA0076
1SV70
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Hitachi DSA0096
Abstract: 1SV70 BB303M
Text: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB303M
ADE-208-697A
200pF,
OT-143
BB303M
Hitachi DSA0096
1SV70
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Hitachi DSA0096
Abstract: 1SV70 BB303C SC-82AB SOT343 C5
Text: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB303C
ADE-208-698A
200pF,
OT-343
BB303C
Hitachi DSA0096
1SV70
SC-82AB
SOT343 C5
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Hitachi DSA0076
Abstract: 1SV70 BB303C SOT343 C5 K-806
Text: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB303C
ADE-208-698B
200pF,
OT-343
BB303C
Hitachi DSA0076
1SV70
SOT343 C5
K-806
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Untitled
Abstract: No abstract text available
Text: ASL912 ASL912 Data Sheet 1.2 GHz CATV Push-pull Amplifier MMIC 1. Product Overview 1.1 Features • 50 ~ 1200 MHz Bandwidth 13.1 dB Gain at 500 MHz Positive Gain Slope CSO : 69 dBc, CTB : 66 dBc @ Pout = 110 dBV flat for NTSC 79 channels + QAM256 75 channels, -6 dB offset
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ASL912
ASL912
QAM256
TSSOP24,
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Untitled
Abstract: No abstract text available
Text: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 47.3 dBm Nominal PSAT at 3 GHz 69.5% Maximum PAE 19.8 dB Nominal Power Gain at 3 GHz
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TGF2023-2-10
TQGaN25
TGF2023-2-10
DC-18
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65372-11: 699 to 748 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells RF_OUT
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SKY65372-11:
S2793a
202981B
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ICS853111
Abstract: ICS853111AY MC100EP111 MC100LVEP111 MS-026
Text: PRELIMINARY Integrated Circuit Systems, Inc. ICS853111 LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS
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ICS853111
1-TO-10
ICS853111
1-to-10
853111AY
ICS853111AY
MC100EP111
MC100LVEP111
MS-026
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PRELIMINARY ICS853111 ICS853111 Integrated DIFFERENTIAL-TO-2.5V/3.3V LOW SKEW, 1-TO-10 Circuit Systems, Inc. BUFFER LVPECL/ECL FANOUT LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/
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1-TO-10
199707558G
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WQFN0202-8V
Abstract: No abstract text available
Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0100 Rev.1.00 Oct.28.2004 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage
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HSG2002
REJ03G0444-0100
WQFN0202-8V
vo-900
Unit2607
WQFN0202-8V
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Integrated Circuit Systems, Inc. ICS853111A LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111A is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS
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ICS853111A
1-TO-10
853111AY
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Untitled
Abstract: No abstract text available
Text: Integrated Circuit Systems, Inc. ICS853111B LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111B is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS ECL Fanout Buffer and a member of the
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ICS853111B
1-TO-10
495ps
853111BY
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zo 405
Abstract: 2SC4993
Text: 2SC4993 Silicon NPN Bipolar Transistor Application MPAK–4 VHF & UHF wide band amplifier 4 Features • High gain bandwidth product fT = 10.5 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.2 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter
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2SC4993
zo 405
2SC4993
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32-PIN
Abstract: ICS853111 ICS853111B 3094
Text: Integrated Circuit Systems, Inc. ICS853111B LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111B is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS ECL Fanout Buffer and a member of the
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ICS853111B
1-TO-10
ICS853111B
1-to-10
853111BY
32-PIN
ICS853111
3094
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ICS853111
Abstract: ICS853111-02
Text: Integrated Circuit Systems, Inc. ICS853111-02 LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111-02 is a low skew, high performance 1 - t o - 10 Differential-to-2.5V/3.3V HiPerClockS LVPECL/ECL Fanout Buffer and a member
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ICS853111-02
1-TO-10
ICS853111-02
ICS85311102
853111AY
ICS853111
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ZO 109
Abstract: zo 107 2SC5247 Hitachi DSA0014
Text: 2SC5247 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector
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2SC5247
ZO 109
zo 107
2SC5247
Hitachi DSA0014
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Untitled
Abstract: No abstract text available
Text: REVISIONS ZO NE LTR A & C ECKi. 31633 N E H R E L E A S E . sacèA GODERAI. UP-OWS. SIS« S C N 3336»1# & W A S : M - E - 'f 3 3 0 2 » - O S DESCRIPTION APPRO VED DATE !o/tá,/fo 1 _ 455 ,450 .065ni/i -150 rspcp .063 ^ .I45ütfc^ .062 p|^ .060 .089 p|^ .087
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065ni/i
69-I6
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zo 150 66
Abstract: V301R 65ZO V361
Text: LOW PROFILE SERIES SPECIFICATIONS 300» 3 2 0 ,3 8 0 AND 3 3 0 VAC Varistors Maximum Ratings R e co g n itio n s To S a fe ty A gency S ta n d a rd s M aida Style Num ber R 69* ‘ Z O V 3 0 1 R A 1 7 5 R 65* *ZO V301 RA 350 R 66* 1Z O V 30 1R A 360 S66Ü ZO V301R A 460
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Untitled
Abstract: No abstract text available
Text: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-699A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;
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OCR Scan
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PDF
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BB403M
ADE-208-699A
200pF,
OT-143
BB403M
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Untitled
Abstract: No abstract text available
Text: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-697A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;
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OCR Scan
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PDF
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BB303M
ADE-208-697A
200pF,
OT-143
BB303M
SC-61
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Untitled
Abstract: No abstract text available
Text: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-698A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;
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BB303C
ADE-208-698A
200pF,
OT-343
BB303C
SC-82AB
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