of IC 9290
Abstract: NE52118 NE52118-T1 S21E transistor c 5287 ca 3140 ic
Text: L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
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NE52118
IR30-00-3
VP15-00-2
WS60-00-1
24-Hour
of IC 9290
NE52118
NE52118-T1
S21E
transistor c 5287
ca 3140 ic
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ZS 1032
Abstract: NE 555 8 pin IC
Text: L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52418 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 16 dB TYP , MSG = 18 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
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NE52418
NE52418
ZS 1032
NE 555 8 pin IC
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ZS 1032
Abstract: No abstract text available
Text: L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52418 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 16 dB TYP , MSG = 18 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
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NE52418
NE52418
IR30-00-3
VP15-00-2
WS60-00-1
24-Hour
ZS 1032
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PDF
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NE52418
Abstract: NE52418-T1-A 7212 laser transistor bf 422 NPN
Text: NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52418 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 16 dB TYP , MSG = 18 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
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NE52418
NE52418
NE52418-T1-A
7212 laser
transistor bf 422 NPN
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IC 6201
Abstract: NE52418 IC 4093 BE 0065E ZS 1032 NE52418-T1 rbm 1 IC nec 555 4093 BF
Text: NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52418 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 16 dB TYP , MSG = 18 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
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NE52418
NE52418
065e-12
IC 6201
IC 4093 BE
0065E
ZS 1032
NE52418-T1
rbm 1
IC nec 555
4093 BF
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L2SA1037AKQLT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features z We declare that the material of product compliance with RoHS requirements. zS- Prefix for Automotive and Other Applications Requiring Unique Site L2SA1037AKQLT1G Series S-L2SA1037AKQLT1G Series
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AEC-Q101
L2SA1037AKQLT1G
S-L2SA1037AKQLT1G
L2SA1037AKQLT1G
S-L2SA1037AKQLT1G
L2SA1037AKQLT3G
S-L2SA1037AKQLT3G
3000/Tape
10000/Tape
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DU2860T
Abstract: 22 pf trimmer capacitor
Text: =zs.-E-= -=- * .-= - E an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860T v2.00 Features -*- N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
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DU2860T
9-180pF
DU2860T
22 pf trimmer capacitor
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Z8671
Abstract: 74L5373 7 chip computer zilog z8671 TDA 12110 SP 8324 LCD INTERFACING USING 8051 ASSEMBLING LANGUAGE ZILOG Z8681-12 Z8671 PS Z8-BASIC TDA 2060
Text: ZS MICROCOMPUTER FAMILY The Z8 2K ROM single chip microcomputer produced by SGS using NMOS technology Automatic electrical test of a VLSI device in the SGS Agrate facility Application board using Z8671 tiny Basic microcomputer CODleDls' Page SGS: an introduction
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Z8671
Z8601lL
74L5373
7 chip computer zilog z8671
TDA 12110
SP 8324
LCD INTERFACING USING 8051 ASSEMBLING LANGUAGE
ZILOG Z8681-12
Z8671 PS
Z8-BASIC
TDA 2060
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PDF
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7415 ic pin details
Abstract: C10535E NE52118 NE52118-T1
Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
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NE52118
NE52118-T1
7415 ic pin details
C10535E
NE52118
NE52118-T1
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PDF
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C10535E
Abstract: NE52318 NE52318-T1 NPN transistor 9418 26364
Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52318 L to S BAND LOW NOISE, HIGH GAIN AMPLIFIER NPN GaAs HBT FEATURES • Ideal for low noise and high gain amplifier NF = 1.1 dB TYP., Ga = 16 dB TYP., MSG = 18.0 dB TYP. @ f = 2 GHz, VCE = 2.0 V, IC = 3 mA, ZS = ZL = 50 Ω
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NE52318
OT-343
NE52318-T1
C10535E
NE52318
NE52318-T1
NPN transistor 9418
26364
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05
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2SC4132
OT-89,
SC-62)
2SC4132;
2SC4132
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PDF
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B2W03
Abstract: BZG04-8V2
Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers VOLTAGE REGULATOR DIODES LEADED BZD23 BZT03 B2W03 p 2 package Vz range11 V) P to. T .p r ZS M (W) (°C) (W) 3.6 to 270 7.5 to 270
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BZD23
BZT03
B2W03
BZD27
BZG03
BZD23-C7V5
BZT03-C7V5
BZW03-C7V5
BZD27-C7V5
BZG04-8V2
B2W03
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PDF
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Untitled
Abstract: No abstract text available
Text: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings
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MPSA65
MMBTA65
PZTA65
MPSA64
MPSA65
MMBTA65
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 142 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, diver circuit >Built in bias resistor R i= 22kiî, R 2=47ki! TT n r Pin Configuration B C R 142 W Zs 1 =B II CO Q62702-C2259 Package o Marking Ordering Code
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Q62702-C2259
OT-23
0235b05
D12D7Hb
Q120747
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • t High Input Impedance High Speed : tf^O.S/zs Max. Inductive Load Low Saturation Voltage
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MG300Q2YS50
961001EAA1
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PDF
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LM 3717
Abstract: resistor VRC 1E generators winding circuit diagrams DDQ1710 PBL3717 pin shourd winding diagram for single phase ac motor
Text: _ ERICSSON COMPONENTS INC lb E D • 3373bflD 0001700 t> ■ ERICSSON ^ September 1989 T-52-Ì3-ZS _ :_ PBL3717 Stepper Motor Drive Circuit Description PBL 3717 Is a bipolar monolithic circuit Intended to control and drive the current In one
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3373bflD
PBL3717
3717N
LM 3717
resistor VRC 1E
generators winding circuit diagrams
DDQ1710
pin shourd
winding diagram for single phase ac motor
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PDF
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PBL3717
Abstract: DDQ1710 LM 3717 3717N
Text: _ ERICSSON COMPONENTS INC lb E D • 3373bflD 0001700 t> ■ ERICSSON ^ September 1989 T-52-Ì3-ZS _ :_ PBL3717 Stepper Motor Drive Circuit Description PBL 3717 Is a bipolar monolithic circuit Intended to control and drive the current In one
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3373bflD
PBL3717
3717N
DDQ1710
LM 3717
3717N
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PDF
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pn5114
Abstract: PN5432
Text: ,HARRIS SEMICOND SECTOR 4302271 QQ15bqa H M HAS 27E » T-33'ZS Switching Transistors Continued Junction FETs — N-Channel (Continued) PART NUMBER rDS(ON) n PACKAGE * Max vP V Min Max Iq ss pA Max BVqs S V Min •iHOFF) pA Max •dss mA Min Max *ap ns Max
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QQ15bqa
PN4091
PN4092
PN4093
2N3382
2N5018
2N5019
RS-468)
pn5114
PN5432
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PDF
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2SA1428
Abstract: No abstract text available
Text: T O SH IB A 2SA1428 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 428 Unit in mm Low Collector Saturation Voltage : V CE (sat) = - 0,5 V (Max,) (IC = - 1 A) High Speed Switching Time : tgtg = 1.0/zs (Typ.)
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2SA1428
2SC3668.
2SA1428
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PDF
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uy 41 tube
Abstract: U 254
Text: Power MOSFET transistors Package dimensions The following illustrations show the package dimensions and the associated land pattern for each package. 4.5 ± 0 . 2 ; 13 /ft tjj ft' rn r 6.0 * % V à St1W n r1 rm ri on ZS Q U-J 15.0 ï Ï 3.0 I u, UTe r + 1
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CL505
Abstract: DARLINGTON TRANSISTOR ARRAYS 2A PU4325 DARLINGTON ARRAYS PNP 6 "transistor arrays" ic DD17DS
Text: Power Transistor Arrays PU4325 1^32852 001705Û Tfll PU4325 Package Dim ensions Unit! mm Silicon NPN/PNP Epitaxial Planar Type 4.2m ax. Power A m plifier • Features $ iß[III • 2 N P N elem en ts + 2 P N P elem en ts • High DC current gain irt ^ <zS>
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DD17DSÃ
PU4325
CL505
DARLINGTON TRANSISTOR ARRAYS 2A
PU4325
DARLINGTON ARRAYS PNP
6 "transistor arrays" ic
DD17DS
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PDF
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A254735
Abstract: TP2010L TP201 TP241 TP2410L
Text: SILICONIX INC SûE t • 0254735 0Q1727Û TP2010L, TP2410L P-Channel Enhancement-Mode MOS Transistors 7tlb ■ SIX fTSEconix in c o r p o r a te d 'T* vi-zs PRODUCT SUMMARY TO-92 TO-226AA V (BR)DSS PART NUMBER BOTTOM VIEW ■d (A) '" s r TP2010L -200 10
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A254735
QQ1727Ã
TP201
TP241
TP2010L
TP2410L
VPDV24
O-226AA)
TP2410L
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PDF
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Untitled
Abstract: No abstract text available
Text: MG100J1ZS40 TOSHIBA MG1 0 0 J 1 ZS 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35,us Max. • Low Saturation Voltage : VCE (sat) =3.5V (Max.)
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MG100J1ZS40
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PDF
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transistor D 2394
Abstract: 2SD2576
Text: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 2SD2167 •F e a tu re s 1 ) Built-in zs n e r diode betw een collector and base. 2 ) Z en er diode has low voltage dispersion. 3 ) Strong protection aga inst reverse pow er surges due to low loads.
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2SD2167
2SD2394
2SD2576
2SD2167
-----2SD2576
cb--60V
94L-1098-0348)
transistor D 2394
2SD2576
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