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    ZS153 Price and Stock

    Rochester Electronics LLC HZS15-3LTA-E

    DIODE ZENER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HZS15-3LTA-E Bulk 2,704
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    • 10000 $0.11
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    Rochester Electronics LLC HZS15-3LTD-E

    DIODE ZENER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HZS15-3LTD-E Bulk 2,704
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.11
    		Buy Now

    Renesas Electronics Corporation HZS15-3LTA-E

    HZS15 - Zener Diode, 15.2V, 0.4W '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HZS15-3LTA-E 5,000 1
    • 1 $0.1067
    • 10 $0.1067
    • 100 $0.1003
    • 1000 $0.0907
    • 10000 $0.0907
    		Buy Now

    Renesas Electronics Corporation HZS15-3LTD-E

    HZS15 - Zener Diode, 15.2V, 0.4W '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HZS15-3LTD-E 20,000 1
    • 1 $0.1067
    • 10 $0.1067
    • 100 $0.1003
    • 1000 $0.0907
    • 10000 $0.0907
    		Buy Now

    ZS153 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZS153 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZS153 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    ZS153 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ZS153 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    ZS153 Unknown Shortform Electronic Component Datasheets Short Form PDF
    ZS153 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZS153 Zetex Semiconductors 250mA Iout, 100V Vrrm Fast Recovery Rectifier Scan PDF

    ZS153 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hv102

    Abstract: 1N5219 HV15F 1jla10 SOT23-6 .S5 1N3225 2SK SOT23 250n 1n3257 HV-30F
    Text: HIGH•SPEED DIODES Item Number Part Number 10 Max VRRM A (Y) t.,. Max (s) VF IF Max @ Test (V) (A) Package Style 5 10 ~~~~~:g: 15 20 HV5-5F ESJASS-06 ESJA25-06 ESJA54-06 ESJA5S-06 HVS-7F ESJASS-OS ESJA25-0S ~~~~~:g: 25 30 35 40 ESJAS2-10 ESJA25-10 ESJA52-10


    Original     		PDF 1N3215 ESJA17-20 ESJA1S-20 ESJA17-25 ESJA1S-25 ESJA1S-30 1N4392 1N4391 1N3223 1N4390 hv102 1N5219 HV15F 1jla10 SOT23-6 .S5 1N3225 2SK SOT23 250n 1n3257 HV-30F

    ZS90

    Abstract: ZS92 2S150 KS78B diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131
    Text: SILICON DIODES Very Low Leakage Planar Epitaxial Characteristics M axim um Ratings Type No. Mean Rectified Current at 75°C V RWM 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 Surge C urrent fo r 5 mS. A Max. Reverse Current at V r ^ M at 25°C nA 250 250 250 250 250


    OCR Scan     		PDF 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 100mA. KS77B KS78B ZS90 ZS92 diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131

    ZS150

    Abstract: ZS102 C642 diode zs104 ZS100 ZS101 ZS103 ZS104 ZS106 ZS108
    Text: AXIAL DIODES SILICON DIFFUSED JUNCTION DIODES The ZS100 and ZS120 series of diffused junction D07 glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 400m A and 250m A respectively.


    OCR Scan     		PDF ZS100 ZS120 400mA 250mA ZS101 ZS102 ZS103 ZS104 ZS150 C642 diode zs104 ZS106 ZS108

    diode zs104

    Abstract: zs102 diode ZS120
    Text: SbE D • 'HTOSTfl G007027 540 ■ Z E T B AXIAL DIODES ZETEX SEMICONDUCTORS I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to


    OCR Scan     		PDF G007027 ZS100 ZS101 ZS102 ZS103 ZS104 ZS106 ZS108 ZS120 ZS121 diode zs104 zs102 diode ZS120

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    ZS150

    Abstract: CECC 50001-057 BS9300 ZS100 ZS102 ZS151 ZS104 ZS122 ZS101 ZS106
    Text: SbE D • 'HTOSTfl G 0 0 7 02 7 540 ■ Z E T B AXIAL DIODES ZETEX S E M I C O N D U C T O R S I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to


    OCR Scan     		PDF G007027 ZS100 ZS120 ZS101 ZS102 ZS103 ZS104 ZS106 ZS150 CECC 50001-057 BS9300 ZS151 ZS122

    diode bs 9300

    Abstract: ZS150 Fast Recovery Diode 50V 3A Diode c642 low leakage diodes low leakage fast epitaxial diode ZS151 C643 ZS152 ZS153
    Text: LOW LEAKAGE DIODES T A B L E 4 - S IL IC O N P L A N A R E P IT A X IA L LOW L E A K A G E D IO D E S The ZS150 series of glass encapsulated diodes have been designed for applications which demand a very low leakage current, a high degree of reliability and fast recovery characteristics.The ZS150 and ZS151


    OCR Scan     		PDF ZS150 ZS151 ZS152 ZS154 ZS153 ZS155 diode bs 9300 Fast Recovery Diode 50V 3A Diode c642 low leakage diodes low leakage fast epitaxial diode C643

    2N222A

    Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92


    OCR Scan     		PDF BFS59 BFS60 BFS61 BFS96-98 BFX84 KS77B KS78B 2N222A N2222 zs90 2N222 ZS150 2n3600 2N222-A

    Diode c642

    Abstract: ZDX4F 595D ZS150
    Text: TS PLESSEY SENICOND/DISCRETE DE | 7250533 ODOSOES 5 7220533 P L ESSEY S E M I C O N D /DIS C R E T E 95D LOW 05025 D l e a k /TgeI dhddes TABLE 4 - SILICON PLANAR EPITAXIAL LOW LEAKAGE DIODES The ZS150 series of glass encapsulated diodes have been designed for applications which demand a very


    OCR Scan     		PDF ZS150 ZS151 BS9300 ZS150 ZS152 Diode c642 ZDX4F 595D

    ZS106

    Abstract: ZS108 zs100 low leakage diodes ZS102 c643
    Text: A X I A L DIODES SILICON DIFFUSED JUNCTION DIODES The ZS100 and ZS120 series o f diffused junction D 07 glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 4 0 0 m A and 25 0m A respectively.


    OCR Scan     		PDF ZS100 ZS120 ZS120 ZS101 ZS121 ZS102 ZS122 ZS106 ZS108 low leakage diodes c643