ZVN3220L Search Results

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Ferranti Electric Inc ZVN3220L Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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ComSIT USA	ZVN3220L		85			1 - 10 - 100 - 1000 - 10000 -	Get Quote

ZVN3220L Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ZVN3220L		Ferranti Semiconductors	Quick Reference Guide 1985		Scan	PDF
ZVN3220L		Unknown	FET Data Book		Scan	PDF
ZVN3220L		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF

ZVN3220L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SEC irf630 Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630 Text: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability	OCR Scan	TT70S7Û IRF630 IRF631 IRF632 IRF633 IRF633 O-220 SEC irf630 IRF630 SEC for IRF630	PDF
ferranti Abstract: ZVN2210L ZVN3306B ZVN3310B ZVH2224B ZVN2220L ZVN2224L ZVN2535B ZVN3206L ZVN3210L Text: - 246 - f §y s tt € A X t Vos or i Vdg * V Vg s (V) Ig s s Id Pi> * /CH * /CH (A) m M $ ÎS (Ta=25^) Vg s (V) Vd s (V) ( M A) (V) (V) («A) Ciss g fs Coss Crss & & m n V g s -0 (max) *typ V g s (V) (0 ) D (Ta=25tC) lo(on) FDs(on) Vd s = Vg s max min (nA)	OCR Scan	ZVN2210L O-220 ZVN2220L ZVP012O8 ZVP0120L ZVP0535A ZVP0535B ZVP0535L ferranti ZVN3306B ZVN3310B ZVH2224B ZVN2224L ZVN2535B ZVN3206L ZVN3210L	PDF
L50Q Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M Text: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50	OCR Scan	OT-23, ZVP3210M" ZVP2210M zvn3210m zvn3210l L50Q ZVN1320B ZVN2210L zvn311 ZVP3210M	PDF
K 3911 Abstract: n3220 Text: ' ZETEX SEMICONDUCTORS U U. I *aa •iSD D ^70570 0 0 0 5 7 1 e 3 ■ ZETB 95D 0 5 7 1 9 T-39-11 N-channel enhancement mode vertical DMOS FET ZV N 3220 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability	OCR Scan	T-39-11 T0-220 ZVN3220L O-220 K 3911 n3220	PDF
G227 Abstract: g228 Text: PLESSEY SENICOND/DISCRETE 7220533 PLESSEY ~TS DE~\| 7EE0S3B □ 0 D S 7 n S 95D SEMICOND/DISCRETE 05719 T-39-11 N-channel enhancement mode vertical DMOS FET ZVN3220 FEATURES • C o m p a c t g e o m etry • F a s t s w itc h in g sp e e d s • N o se c o n d a ry b re akd o w n	OCR Scan	T-39-11 ZVN3220 ZVN3220L -----------------------------T-39-11 5/ZVN3220L/09/66 00DS724 G-226 G227 g228	PDF