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    ZXMN10A07ZTA Search Results

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    ZXMN10A07ZTA Price and Stock

    Diodes Incorporated ZXMN10A07ZTA

    MOSFET N-CH 100V 1A SOT89-3
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    DigiKey ZXMN10A07ZTA Cut Tape 10,534 1
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    ZXMN10A07ZTA Digi-Reel 10,534 1
    • 1 $0.66
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    • 1000 $0.23864
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    ZXMN10A07ZTA Reel 10,000 1,000
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    Avnet Americas ZXMN10A07ZTA Reel 8 Weeks 1,000
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    Mouser Electronics ZXMN10A07ZTA 35,555
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    Arrow Electronics ZXMN10A07ZTA 2,000 8 Weeks 1,000
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    Newark ZXMN10A07ZTA Cut Tape 1,434 1
    • 1 $0.654
    • 10 $0.557
    • 100 $0.396
    • 1000 $0.249
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    Future Electronics ZXMN10A07ZTA Reel 8 Weeks 1,000
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    ZXMN10A07ZTA Reel 8 Weeks 1,000
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    Bristol Electronics ZXMN10A07ZTA 2,000
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    Quest Components ZXMN10A07ZTA 624
    • 1 $0.634
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    ZXMN10A07ZTA 9
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    TME ZXMN10A07ZTA 1,850 1
    • 1 $0.85
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    ComSIT USA ZXMN10A07ZTA 1,875
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    Avnet Asia ZXMN10A07ZTA 3,000 8 Weeks 1,000
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    Avnet Silica ZXMN10A07ZTA 10 Weeks 1,000
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    Zetex / Diodes Inc ZXMN10A07ZTA

    Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) SOT-89 T/R
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    Verical ZXMN10A07ZTA 94,000 1,000
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    ZXMN10A07ZTA 2,000 1,000
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    • 1000 $0.1873
    • 10000 $0.1662
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    Bristol Electronics ZXMN10A07ZTA 1,000
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    ZXMN10A07ZTA 980
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    Quest Components ZXMN10A07ZTA 800
    • 1 $0.634
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    • 100 $0.634
    • 1000 $0.2536
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    Diodes Incorporated ZXMN10A07ZTA (ALTERNATE: 6697401P)

    MOSFET N-Channel 100V 1.4A SOT89 | Diodes Inc ZXMN10A07ZTA
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    RS ZXMN10A07ZTA (ALTERNATE: 6697401P) Bulk 10
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    ZXMN10A07ZTA Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN10A07ZTA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07ZTA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

    ZXMN10A07ZTA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7N10

    Abstract: ZXMN10A07Z ZXMN10A07ZTA mosfet structure
    Text: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=100V; RDS(ON)=1 ; D=1.15A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low


    Original     		PDF ZXMN10A07Z ZXMN10A07ZTA 7N10 ZXMN10A07Z ZXMN10A07ZTA mosfet structure

    GE1030

    Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
    Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds


    Original     		PDF DCS/PCN-1119 PCN-1119 OT223, OD323, OD523, OT323, OT23-6, OT23-5 GE1030MOT223 ZXTP2014GTC GE1030 FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6

    BAT54CTA

    Abstract: MMDTA06 BZT52C3V9LP DDTB123YC DCX124EK DCX69 DCX68
    Text: DATE: 7th November, 2013 PCN #: 2113 – Rev01 PCN Title: Conversion to Copper Bond Wire and Qualification of Additional Wafer Source on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being


    Original     		PDF Rev01 BAS70W-05-7-F ZLLS1000TA BAS20W-7-F BAS521-7 1N5711WS-7-F BAS70W-06-7-F ZLLS500TA BAS21W-7-F BAS521LP-7 BAT54CTA MMDTA06 BZT52C3V9LP DDTB123YC DCX124EK DCX69 DCX68

    SOT89 MARKING CODE

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A07Z ADVANCE INFORMATION 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits V BR DSS RDS(on) Max 100V 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V • • • • • • • ID max


    Original     		PDF ZXMN10A07Z AEC-Q101 DS33565 SOT89 MARKING CODE

    7N10

    Abstract: ZXMN10A07Z ZXMN10A07ZTA
    Text: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V : RDS(on)=0.7 ; ID=1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original     		PDF ZXMN10A07Z ZXMN10A07ZTA 7N10 ZXMN10A07Z ZXMN10A07ZTA

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    7N10

    Abstract: ZXMN10A07Z ZXMN10A07ZTA ZXMN10A07
    Text: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V : RDS(on)=0.7 ; ID=1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original     		PDF ZXMN10A07Z ZXMN10A07ZTA 7N10 ZXMN10A07Z ZXMN10A07ZTA ZXMN10A07

    AEC-Q101

    Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
    Text: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC


    Original     		PDF AEC-Q100/AEC-Q101 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q AEC-Q101 AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA

    7N10

    Abstract: ZXMN10A07Z ZXMN10A07ZTA
    Text: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 1 ID= 1.15A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A07Z ZXMN10A07ZTA 7N10 ZXMN10A07Z ZXMN10A07ZTA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A07Z ADV AN CE I N FORM AT I ON 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits V BR DSS RDS(on) Max 100V 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V • • • • • •


    Original     		PDF ZXMN10A07Z AEC-Q101 DS33565

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA