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    ZXMN10A08E6TA Price and Stock

    Diodes Incorporated ZXMN10A08E6TA

    MOSFET N-CH 100V 1.5A SOT26
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    DigiKey ZXMN10A08E6TA Cut Tape 14,188 1
    • 1 $0.69
    • 10 $0.464
    • 100 $0.69
    • 1000 $0.22866
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    ZXMN10A08E6TA Digi-Reel 14,188 1
    • 1 $0.69
    • 10 $0.464
    • 100 $0.69
    • 1000 $0.22866
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    ZXMN10A08E6TA Reel 12,000 3,000
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    Avnet Americas ZXMN10A08E6TA Reel 3,000
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    • 10000 $0.16856
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    ZXMN10A08E6TA Reel 8 Weeks 3,000
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    • 10000 $0.23765
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    Mouser Electronics ZXMN10A08E6TA 15,976
    • 1 $0.58
    • 10 $0.464
    • 100 $0.31
    • 1000 $0.229
    • 10000 $0.183
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    Arrow Electronics ZXMN10A08E6TA 15,000 8 Weeks 3,000
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    ZXMN10A08E6TA Cut Strips 2,791 8 Weeks 391
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    Newark ZXMN10A08E6TA Cut Tape 2,078 1
    • 1 $0.541
    • 10 $0.447
    • 100 $0.342
    • 1000 $0.283
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    RS ZXMN10A08E6TA Bulk 1,500 57 Weeks 1
    • 1 $0.55
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    • 100 $0.43
    • 1000 $0.39
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    Future Electronics ZXMN10A08E6TA Reel 9,000 8 Weeks 3,000
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    ZXMN10A08E6TA Reel 8 Weeks 3,000
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    Avnet Asia ZXMN10A08E6TA 8 Weeks 3,000
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    Avnet Silica ZXMN10A08E6TA 10 Weeks 3,000
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    Chip Stock ZXMN10A08E6TA 6,912
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    ES Components ZXMN10A08E6TA 9,000
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    New Advantage Corporation ZXMN10A08E6TA 6,000 1
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    Win Source Electronics ZXMN10A08E6TA 78,600
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    • 10000 $0.1909
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    Diodes Incorporated ZXMN10A08E6TA-50

    Transistor MOSFET N-Channel 100V 1.9A 6-Pin SOT-26 T/R - Tape and Reel (Alt: ZXMN10A08E6TA-50)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ZXMN10A08E6TA-50 Reel 24 Weeks 3,000
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    Diodes Incorporated ZXMN10A08E6TC

    MOSFETs 100V N-Chnl UMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ZXMN10A08E6TC
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    Zetex / Diodes Inc ZXMN10A08E6TA

    Trans MOSFET N-CH 100V 3.5A 6-Pin SOT-26 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical ZXMN10A08E6TA 237,000 3,000
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    • 10000 $0.1813
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    ZXMN10A08E6TA 15,000 3,000
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    ZXMN10A08E6TA 2,791 391
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    Quest Components ZXMN10A08E6TA 2,308
    • 1 $0.6975
    • 10 $0.6975
    • 100 $0.6975
    • 1000 $0.279
    • 10000 $0.279
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    Others ZXMN10A08E6TA

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.5A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ZXMN10A08E6TA 221
    • 1 $0.6975
    • 10 $0.6975
    • 100 $0.4185
    • 1000 $0.3488
    • 10000 $0.3488
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    ZXMN10A08E6TA Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN10A08E6TA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08E6TA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

    ZXMN10A08E6TA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V BR DSS 100V Features and Benefits Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V 1.68A


    Original     		PDF ZXMN10A08E6 AEC-Q101 DS31909

    10A8 SOT23-6

    Abstract: 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V; RDS(ON)=0.4⍀ D=1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC 10A8 SOT23-6 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    ZXMN10A08E6

    Abstract: 10A8 SOT23-6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.4 ID= 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC ZXMN10A08E6 10A8 SOT23-6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC

    Untitled

    Abstract: No abstract text available
    Text: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being


    Original     		PDF ackT1951GTAÂ ZX5T849GTAÂ ZX5T851GTAÂ ZX5T853GTAÂ ZX5T949GTAÂ ZX5T951GTCÂ ZX5T951GTAÂ ZX5T953GTAÂ ZX5T955GTAÂ ZXM62N03GTAÂ

    fs405

    Abstract: No abstract text available
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ; ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC TX75248, fs405

    ASD103

    Abstract: No abstract text available
    Text: DATE: 9th April, 2014 PCN #: 2140 PCN Title: Leadframe material change for SOT-25, SOT-26 and TSOT25 packages Dear Customer: This is an announcement of change s to products that are currently being


    Original     		PDF OT-25, OT-26 TSOT25 OT-26, TSOT25 ZXRE160AET5TAÂ ZXRE160ET5TAÂ ZXRE250AW5â ZXSC300E5TAÂ ASD103

    10A8 SOT23-6

    Abstract: 10A8 MOSFET sot23-6 TOP marking sot23-6 power MOSFET sot23-6 ZXMN10A08E6TC MARKING A SOT23-6 DSS SOT23 sot23-6 ZXMN10A08E6
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6T ZXMN10A08E6TC 10A8 SOT23-6 10A8 MOSFET sot23-6 TOP marking sot23-6 power MOSFET sot23-6 ZXMN10A08E6TC MARKING A SOT23-6 DSS SOT23 sot23-6 ZXMN10A08E6

    GE1030

    Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
    Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds


    Original     		PDF DCS/PCN-1119 PCN-1119 OT223, OD323, OD523, OT323, OT23-6, OT23-5 GE1030MOT223 ZXTP2014GTC GE1030 FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6

    BAT54CTA

    Abstract: MMDTA06 BZT52C3V9LP DDTB123YC DCX124EK DCX69 DCX68
    Text: DATE: 7th November, 2013 PCN #: 2113 – Rev01 PCN Title: Conversion to Copper Bond Wire and Qualification of Additional Wafer Source on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being


    Original     		PDF Rev01 BAS70W-05-7-F ZLLS1000TA BAS20W-7-F BAS521-7 1N5711WS-7-F BAS70W-06-7-F ZLLS500TA BAS21W-7-F BAS521LP-7 BAT54CTA MMDTA06 BZT52C3V9LP DDTB123YC DCX124EK DCX69 DCX68

    ZXMN10A08E6

    Abstract: 10A8 ZXMN10A08E6TA ZXMN10A08E6TC DS31909 marking 10A8 10A8 SOT23-6
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) 100V TA = 25°C 0.25Ω • Low on-resistance •


    Original     		PDF ZXMN10A08E6 AEC-Q101 OT23-6 DS31909 ZXMN10A08E6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC marking 10A8 10A8 SOT23-6

    10A8 SOT23-6

    Abstract: 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.4 ID = 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC 10A8 SOT23-6 10A8 ZXMN10A08E6 ZXMN10A08E6TA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits N EW PRODU CT Product Summary V BR DSS 100V Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V


    Original     		PDF ZXMN10A08E6 AEC-Q101 DS31909

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    10A8 SOT23-6

    Abstract: ZXMN10A08E6
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC 10A8 SOT23-6 ZXMN10A08E6

    10A8

    Abstract: ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC00 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA