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    Diodes Incorporated ZXMN2A01FTA

    MOSFET N-CH 20V 1.9A SOT23-3
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    Diodes Incorporated ZXMN2A01E6TA

    MOSFET N-CH 20V 2.5A SOT23-6
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    Diodes Incorporated ZXMN2A03E6TA

    MOSFET N-CH 20V 3.7A SOT23-6
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    Diodes Incorporated ZXMN2A04DN8TA

    MOSFET 2N-CH 20V 5.9A 8SO
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    Diodes Incorporated ZXMN2A02N8TA

    MOSFET N-CH 20V 8.3A 8SO
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    ZXMN2A0 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN2A01 Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A01E6 Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A01E6 Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A01E6TA Zetex Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.44 A SOT-23-6 Original PDF
    ZXMN2A01E6TA Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A01E6TC Zetex Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CHAN 20V SOT23-6 Original PDF
    ZXMN2A01E6TC Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A01F Diodes 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A01F Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A01F Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A01FTA Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 1.9A SOT23-3 Original PDF
    ZXMN2A01FTA TY Semiconductor MOSFET N-CHAN 20V 2.2A - SOT-23 Original PDF
    ZXMN2A01FTA Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A01FTC Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CHAN 20V SOT23-3 Original PDF
    ZXMN2A01FTC Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A02N8 Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A02N8 Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A02N8TA Zetex Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8.3A 8-SOIC Original PDF
    ZXMN2A02N8TA Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN2A02N8TC Zetex Semiconductors 20V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

    ZXMN2A0 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2A04D

    Abstract: ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC dual mosfet marking 506
    Text: ZXMN2A04DN8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.025 ; ID= 7.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC 2A04D ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC dual mosfet marking 506 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary V BR DSS RDS(ON) 20V 0.12Ω @ VGS = 10V Features • • • • • • • • ID TA = +25°C 2.2A Description This new generation MOSFET is designed to minimize the on-state


    Original
    ZXMN2A01F AEC-Q101 DS33513 PDF

    ZXMN2A03E6TA

    Abstract: ZXMN2A03E6TC ZXMN2A03E6
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.055⍀ D=4.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,


    Original
    ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC ZXMN2A03E6TA ZXMN2A03E6TC ZXMN2A03E6 PDF

    sot23 2A1 device Marking

    Abstract: ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC zxm* sot23-6
    Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=3.03A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original
    ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC sot23 2A1 device Marking ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC zxm* sot23-6 PDF

    sm8a

    Abstract: ZXMN2A01FTA ZXMN2A01F ZXMN2A01FTC
    Text: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original
    ZXMN2A01F ZXMN2A01FTA ZXMN2A01FTC sm8a ZXMN2A01FTA ZXMN2A01F ZXMN2A01FTC PDF

    sot23-6 marking 131

    Abstract: sot23 2A1 device Marking
    Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=3.03A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


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    ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC sot23-6 marking 131 sot23 2A1 device Marking PDF

    diode 2a02

    Abstract: No abstract text available
    Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC diode 2a02 PDF

    ZXMN2A01F

    Abstract: ZXMN2A01FTA ZXMN2A01FTC A93V
    Text: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original
    ZXMN2A01F ZXMN2A01FTA ZXMN2A01FTC ZXMN2A01F ZXMN2A01FTA ZXMN2A01FTC A93V PDF

    ZXMN2A04DN8

    Abstract: ZXMN2A04DN8TA ZXMN2A04DN8TC
    Text: ZXMN2A04DN8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.030⍀ ID=6.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC PDF

    marking QG SOT23-6

    Abstract: sot23 6 device Marking sot23 2A1 device Marking DIODES marking 2a1 MARKING 20 SOT23-6 MOSFET N SOT23-6 MOSFET sot23-6 MOSFET sot23-6 QG SOT23-6 ZXMN2A01E6
    Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original
    ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC marking QG SOT23-6 sot23 6 device Marking sot23 2A1 device Marking DIODES marking 2a1 MARKING 20 SOT23-6 MOSFET N SOT23-6 MOSFET sot23-6 MOSFET sot23-6 QG SOT23-6 ZXMN2A01E6 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original
    ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original
    ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC PDF

    ZXMN2A02N8TA

    Abstract: ZXMN2A02N8TC 2A02 ZXMN2A02N8 115AV
    Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC 2A02ew ZXMN2A02N8TA ZXMN2A02N8TC 2A02 ZXMN2A02N8 115AV PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Features V BR DSS RDS(ON) 20V 0.12Ω @ VGS = 10V ID TA = +25°C 2.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original
    ZXMN2A01F AEC-Q101 DS33513 PDF

    ZXMN2A04DN8

    Abstract: ZXMN2A04DN8TA ZXMN2A04DN8TC zxmn2a0
    Text: ZXMN2A04DN8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.025 ; ID= 7.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC zxmn2a0 PDF

    sot23 2A1 device Marking

    Abstract: ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC MARKING 303 SOT23-6
    Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original
    ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC 13ephone: sot23 2A1 device Marking ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC MARKING 303 SOT23-6 PDF

    D209A

    Abstract: D-209A ZXMN2A01F ZXMN2A01FTA ZXMN2A01FTC 4422 MOSFET
    Text: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=2.09A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original
    ZXMN2A01F ZXMN2A01FTA ZXMN2A01FTC D209A D-209A ZXMN2A01F ZXMN2A01FTA ZXMN2A01FTC 4422 MOSFET PDF

    diode ed 49

    Abstract: DMN3025LSS
    Text: Not Recommended for New Design Use DMN3025LSS ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET ID = 7.8A N O T FO R R EC N O EW M M D EN ES D IG ED N SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure


    Original
    DMN3025LSS ZXMN2A02X8 diode ed 49 DMN3025LSS PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.12 ID = 3.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original
    ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    ZXMN2A02N8 ZXMN2A02N8TA ZXMN2A02N8TC D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original
    ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION This new generation of trench MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original
    ZXMN2A01F ZXMN2A01FTA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 7.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original
    ZXMN2A02X8 ZXMN2A02X8TA ZXMN2A02X8TC PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original
    ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC PDF