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Diodes Incorporated ZXMN3A01E6TC MOSFET N-CH 30V 2.4A SOT23-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ZXMN3A01E6TC	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.16896	Buy Now

ZXMN3A01E6TC Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ZXMN3A01E6TC		Zetex Semiconductors	30V N-CHANNEL ENHANCEMENT MODE MOSFET		Original	PDF
ZXMN3A01E6TC		Zetex Semiconductors	30V N-CHANNEL ENHANCEMENT MODE MOSFET		Original	PDF

ZXMN3A01E6TC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ZXMN3A01E6TC Abstract: ZXMN3A01E6 ZXMN3A01E6TA Text: ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.12⍀ D=3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power	Original	PDF	ZXMN3A01E6 OT23-6 OT23-6 ZXMN3A01E6TA ZXMN3A01E6TC ZXMN3A01E6TC ZXMN3A01E6 ZXMN3A01E6TA
Untitled Abstract: No abstract text available Text: ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	PDF	ZXMN3A01E6 OT23-6 OT23-6 ZXMN3A01E6TA
AP3039AM Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)	Original	PDF	2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
marking QG SOT23-6 Abstract: ZXMN3A01E6 ZXMN3A01E6TA ZXMN3A01E6TC Text: ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	PDF	ZXMN3A01E6 OT23-6 OT23-6 ZXMN3A01E6TA ZXMN3A01E6TC marking QG SOT23-6 ZXMN3A01E6 ZXMN3A01E6TA ZXMN3A01E6TC
MOSFET sot23-6 QG Abstract: No abstract text available Text: ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.12⍀ D=2.98A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power	Original	PDF	ZXMN3A01E6 OT23-6 OT23-6 ZXMN3A01E6TA ZXMN3A01E6TC MOSFET sot23-6 QG
marking QG SOT23-6 Abstract: ZXMN3A01E6 ZXMN3A01E6TA ZXMN3A01E6TC Text: ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.12 ID=3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	PDF	ZXMN3A01E6 OT23-6 OT23-6 ZXMN3A01E6TA ZXMN3A01E6TC marking QG SOT23-6 ZXMN3A01E6 ZXMN3A01E6TA ZXMN3A01E6TC