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DSA00743122.pdf
Manufacturer
Toshiba
Partial File Text
TOSHIBA MICROWAVE POWER GaAs FET PRELIMINARY Features · Low distortion - Padj = -74 dBc at Po = 38 dBm · High gain - G1dB = 13 dB · Partially matched type · Hermetically sealed package RF Performanc
Datasheet Type
Original
ECAD Model
Part Details
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S9G08A