DSAUD0043209.pdf by Cree

Partial File Text CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general pu
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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CGH40006 CGH40006P CGH40006P-TB RO5880