SGS-THOMSON
ilLiraMOIgi
BUZ32 CHIP
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM
DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A
Scan
No
Unknown
Obsolete
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
