DSA00589015.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RQA0009TXDQS Silicon N-Channel MOS FET Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Co
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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