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ScansU3X1261.pdf
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bDE D ÃS3SLGS GGM57Ã4 ^7 SIEMENS IGBT Module Preliminary Data ISIEfi SIEMENS AKTIENGESELLSCHAF BSM 10 GD 100 D VCE = 1000 V I c = 6 x 11 A at Tc = 25 C /c = 6 x 10 A at 7"c = 40 'C ⢠Power module
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ECAD Model
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BSM10GD100
BSM10GD100D
btb 148 600
siemens igbt
transient Diode bge