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DSA0068825.pdf
Manufacturer
NEC
Partial File Text
SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA · GATE LENGTH: 0.3 µm · GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a H
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ECAD Model
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User Tagged Keywords
GM 90 562 573
NE33200
NE33200M
NE33200N