DSA0074473.pdf
by Samsung Electronics
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SSS4N80AS
Advanced Power MOSFET
FEATURES
BVDSS = 800 V
Avalanche Rugged Technology
RDS... (on) = 3.0
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 2.8 A
Improved Gate C more
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Original
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Unknown
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Unknown
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Transferred
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