DSASW00208553.pdf by Infineon Technologies

Partial File Text IPP048N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 4.8 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, normal le
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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048N12N IEC61249-2-21 IPP048N12N3 PG-TO220-3

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