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    • 3DE D ■ T^S1^? 0D3Q13H 5 T^-tj 7=7 SGS-THOMSON s G S"TH0MS0N Kii]ö(g®®i[L(l©¥^(Q)iD(gi IRF620 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 110x110 mils ME
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