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DSAE0010759.pdf
by Infineon Technologies
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IPP048N12N3 G OptiMOS®3 Power-Transistor Product Summary Features V DS 4.8 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, normal lev
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048N12N
048N12N3
IPP048N12N3
IPP048N12N3 G
PG-TO220-3