DSA2IH0074438.pdf

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Partial File Text PIXYS IGBT with Diode IXSH 10N120AU1 U = 2 0 A VC E S Short Circuit SOA Capability = 1200 V VC E (sa,, = 4.0 V Symbol VCES V *C G R v vG E H Test C onditions ^ = 25°C to 150°C T, = 25
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ECAD Model

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10n120 10N120AU1

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