DSA00261506.pdf by Infineon Technologies

Partial File Text IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor Product Summary Features V DS 5.1 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),m
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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051ne8n 054NE8N 05CNE8N IPP054NE8N PG-TO220-3

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