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    "SOT-227 B" DIMENSIONS Search Results

    "SOT-227 B" DIMENSIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    "SOT-227 B" DIMENSIONS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HUR2x30-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x30-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255


    Original     		HUR2x30-60 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUR2x30-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 400 HUR2x30-40 Symbol VRRM V 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255


    Original     		HUR2x30-40 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUR2x30-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x30-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255


    Original     		HUR2x30-60 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUR2x60-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x60-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255


    Original     		HUR2x60-60 OT-227 PDF

    100v 3A ultra fast recovery diode

    Abstract: No abstract text available
    Text: HUR2x30-30 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 300 HUR2x30-30 Symbol VRRM V 300 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255


    Original     		HUR2x30-30 OT-227 100v 3A ultra fast recovery diode PDF

    TFR 600

    Abstract: No abstract text available
    Text: HUR2x30-100, HUR2x30-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x30-100 HUR2x30-120 VRSM V 1000 1200 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B


    Original     		HUR2x30-100, HUR2x30-120 OT-227 HUR2x30-100 TFR 600 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUR2x60-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x60-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255


    Original     		HUR2x60-60 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUR2x100-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x100-40 VRSM V 400 Symbol VRRM V 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255


    Original     		HUR2x100-40 OT-227 PDF

    IRM 1200

    Abstract: No abstract text available
    Text: HUR2x30-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 400 HUR2x30-40 Symbol VRRM V 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255


    Original     		HUR2x30-40 OT-227 IRM 1200 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUR2x30-100, HUR2x30-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x30-100 HUR2x30-120 VRSM V 1000 1200 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B


    Original     		HUR2x30-100, HUR2x30-120 OT-227 PDF

    100v 3A ultra fast recovery diode

    Abstract: No abstract text available
    Text: HUR2x30-30 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 300 HUR2x30-30 Symbol VRRM V 300 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255


    Original     		HUR2x30-30 OT-227 100v 3A ultra fast recovery diode PDF

    Epitaxial Diode FRED VRRM 1200 V 40 ns

    Abstract: fast recovery diode 600v 120a
    Text: HUR2x60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x60-100 HUR2x60-120 VRSM V 1000 1200 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B


    Original     		HUR2x60-100, HUR2x60-120 OT-227 HUR2x60-100 Epitaxial Diode FRED VRRM 1200 V 40 ns fast recovery diode 600v 120a PDF

    DIODE 409

    Abstract: No abstract text available
    Text: HUR2x100-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x100-40 VRSM V 400 Symbol VRRM V 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255


    Original     		HUR2x100-40 OT-227 DIODE 409 PDF

    sonic cleaner

    Abstract: No abstract text available
    Text: HUR2x60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x60-100 HUR2x60-120 VRSM V 1000 1200 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B


    Original     		HUR2x60-100, HUR2x60-120 OT-227 sonic cleaner PDF

    Untitled

    Abstract: No abstract text available
    Text: HUR2x60-30, HUR2x60-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 300 400 HUR2x60-30 HUR2x60-40 Symbol VRRM V 300 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80


    Original     		HUR2x60-30, HUR2x60-40 OT-227 HUR2x60-30 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 34A Ω 260mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		IXFN40N110P 300ns OT-227 E153432 40N110P PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 23A ≤ 390mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		IXFN26N100P 300ns OT-227 E153432 26N100P 3-07-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 25A Ω 360mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		IXFN30N110P 300ns OT-227 E153432 30N110P PDF

    3188 diode

    Abstract: No abstract text available
    Text: HUR2x60-30, HUR2x60-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 300 400 HUR2x60-30 HUR2x60-40 Symbol VRRM V 300 400 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80


    Original     		HUR2x60-30, HUR2x60-40 OT-227 3188 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1200V = 30A ≤ 350mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		IXFN30N120P 300ns OT-227 E153432 30N120P 1-07-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN38N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 38A ≤ 210mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		IXFN38N100P 300ns OT-227 E153432 38N100P 8-23-07-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN44N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 37A ≤ 220mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		IXFN44N100P 300ns OT-227 E153432 44N100P 8-27-07-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 460mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		IXFN26N120P 300ns OT-227 E153432 26N120P 1-07-A PDF

    IXFN64N50PD2

    Abstract: 64N50P SOT227B package 64N50
    Text: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ


    Original     		IXFN64N50PD2 IXFN64N50PD3 OT-227 E153432 200ns 64N50P IXFN64N50PD2 SOT227B package 64N50 PDF