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    0-30V POWER Search Results

    0-30V POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    0-30V POWER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mosfet equivalent

    Abstract: 2SK3018 T106 2SK3018 sc70
    Text: 2SK3018 Transistor Small switching 30V, 0.1A 2SK3018 zExternal dimensions (Unit : mm) zApplications Interfacing, switching (30V, 100mA) 2.0±0.2 0.9±0.1 1.3±0.1 (2) (2) (3) (3) 0.7±0.1 0 to 0.1 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions


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    2SK3018 100mA) SC-70 mosfet equivalent 2SK3018 T106 2SK3018 sc70 PDF

    2SK3019

    Abstract: SC-75A
    Text: 2SK3019 Transistor Small switching 30V, 0.1A 2SK3019 !External dimensions (Units : mm) !Applications Interfacing, switching (30V, 100mA) 1.6±0.2 0.7±0.1 1.0±0.1 0.1±0.55 (2) (2) (3) 0.8±0.1 (1) (1) 0.5 0.3 +0.1 −0.05 1.6±0.1 0.5 0~0.1 0.15±0.05


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    2SK3019 100mA) SC-75A OT-416 2SK3019 SC-75A PDF

    2SK3019

    Abstract: SC-75A
    Text: 2SK3019 Transistor Small switching 30V, 0.1A 2SK3019 !External dimensions (Units : mm) !Applications Interfacing, switching (30V, 100mA) 1.6±0.2 0.7±0.1 1.0±0.1 0.1±0.55 (2) (2) (3) 0.8±0.1 (1) (1) 0.5 0.3 +0.1 −0.05 1.6±0.1 0.5 0~0.1 0.15±0.05


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    2SK3019 100mA) SC-75A OT-416 2SK3019 SC-75A PDF

    2SK3019

    Abstract: SC-75A
    Text: 2SK3019 Transistor Small switching 30V, 0.1A 2SK3019 zExternal dimensions (Unit : mm) zApplications Interfacing, switching (30V, 100mA) 1.6±0.2 0.7±0.1 1.0±0.1 (1) 0.1±0.55 (2) (2) (3) 0.8±0.1 (1) 0.5 1.6±0.1 0.5 0.3 +0.1 −0.05 0~0.1 0.15±0.05 (1) Source


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    2SK3019 100mA) SC-75A OT-416 2SK3019 SC-75A PDF

    IT-E131

    Abstract: IT-E131 Rs232 cable
    Text: Data Sheet Triple Output Programmable DC Power Supply Model 9130 Specifications The 9130 is a fully programmable triple Output DC Power Supply delivering 0-30V/0-3A on 2 outputs and 0-5V/0-3A on 1 output. Each output is fully floating and outputs can be adjusted independently


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    RS232 IT-E131 v070313 IT-E131 IT-E131 Rs232 cable PDF

    Untitled

    Abstract: No abstract text available
    Text: ACT4303 Active-Semi Rev 0, 05-Dec-11 30V/3A Sensorless CC/CV Step-Down DC/DC Converter FEATURES APPLICATIONS • • • • • • • • • • • 32V Input Voltage Surge 30V Steady State Input Voltage Up to 3A Output Current Output Voltage up to 12V


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    ACT4303 05-Dec-11 ACT4303 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Triple Output DC Power Supplies Models 1760A, 1761 & 1762 Specifications Spe ci fication s 1760A 1761 1762 Output Voltage 0-30V A & B 4-6.5 V (C) 0-35V (A & B) 2-6.5 V (C) 0-60V (A & B) 2-6.5 V (C) Output Current 0-2A (A & B) 5A (C) 0-3A (A & B)


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    v012312 PDF

    k1507

    Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
    Text: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn


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    T0220F15 K1663 k1507 K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05 PDF

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2249-01L,S N-channel MOS-FET F-lll Series 30V 10A 35W > Outline Drawing > Features - 0 ,0 6 0 High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control General Purpose Power Amplifier


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    2SK2249-01L 2SK2249-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30KM-03 HIGH-SPEED SWITCHING USE FS30KM-03 OUTLINE DRAWING Dimensions in mm 1 0 ± 0 .3 2 .8 1 0 .2 10V DRIVE V d s s .30V rDS ON (M AX) .4 6 m ii


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    FS30KM-03 46mi2 O-220FN 57KH23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30AS-03 HIGH-SPEED SWITCHING USE FS30AS-03 OUTLINE DRAWING Dimensions in mm 0.S±0.1 0.5 ±0.2 08^ O '2 • 10V DRIVE • VDSS . 30V 0 ® A- GATE DRAIN


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    FS30AS-03 PDF

    c10p03

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 11A/20~30V C10P02QL C10P03QL F10P02QL F10P03QL FEATU R ES °Similar to TO-220AB Case 0 Fully Molded Isolation F-Type • Extremely Low Forward Voltage Drop 0 Dual Diodes - Cathode Common ° Low Power Loss, High Efficiency 0 High Surge Capability


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    1A/20 C10P02QL C10P03QL F10P02QL F10P03QL O-220AB bbl5153 c10p03 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50KMH-03 HIGH-SPEED SWITCHING USE FS50KMH-03 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2 .8 1 0 .2 2.5V DRIVE V d s s .30V rDS ON (M AX). 22m Q


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    FS50KMH-03 O-220FN 71Q-123 PDF

    P channel MOSFET 50A

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS100KMH-03 HIGH-SPEED SWITCHING USE FS100KMH-03 OUTLINE DRAWING Dimensions in mm 10 ± 0 . 3 2.8 ± 0 .2 • 2.5V DRIVE • TDS ON (MAX) . •■ 30V 5.4mO • I D .


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    FS100KMH-03 100ns O-220FN P channel MOSFET 50A PDF

    A2400

    Abstract: No abstract text available
    Text: E h a r r is H A -2 4 0 0 /0 4 /0 5 PRAM Four Channel Programmable Amplifier August 1991 Features • A pplications Programmability • Thousands of Applications; Program: • High Rate S le w . 30V/fis


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    40MHz 150kV HA-2400 A2400 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30AS-03 HIGH-SPEED SWITCHING USE FS30AS-03 OUTLINE DRAWING Dimensions in mm 6.5 5 .0 1 0 .2 -h 1.0 l] 0.9MAX. 0 .5 1 0 .2 0.8 J I 3I /H q T Hl w e Q w V d s s . 30V rDS (ON (MAX). 46mi2


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    FS30AS-03 46mi2 PDF

    transistor 2SA928

    Abstract: 2SA928 transistor pnp 30V 2A 1W
    Text: MICRO 2SA928 PNP SILICON TRANSISTOR DESCRIPTION TO-92B 2SA928 is PNP silicon planar transistor dedesigned for audio power amplifier. ECB Ta=25°C CONDITIONS MIN TYP MAX UNIT IC=100^A JE=0 30 V IC=10mA IB=0 30 V IE=lmA IC=0 5 nA VCB=30V IE=0 100 100 nA VEB=5V IC=0


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    O-92B 2SA928 2SA928 500mA transistor 2SA928 transistor pnp 30V 2A 1W PDF

    1RF7319

    Abstract: IRF7319 IRF7319 0 MOSFET ior 144
    Text: PD - 9.1606A International I R Rectifier IRF7319 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-Ch V dss 30V P-Ch -3 0 V R d S oti 0 . 0 2 9 Q 0 .0 5 8 Î2


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    IRF7319 C-150 Fig20. C-151 1RF7319 IRF7319 IRF7319 0 MOSFET ior 144 PDF

    DFRC

    Abstract: 86130 2A1050 AN7254 AN7260 ITF86130SK8T MS-012AA TB370 bv164 RS391
    Text: in t e ITF86130SK8T r r ii J a n u a ry . Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET File Num ber 4798.2 Features • Ultra Low On-Resistance ‘ Packaging r D S O N = 0 .0 0 7 8 a VGS= 10V ‘ rDS(ON) = 0 .0 1 0 a VGs = 4.5V


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    MS-012AA) ITF86130SK8T 0078a MS-012AA 330mm EIA-481 DFRC 86130 2A1050 AN7254 AN7260 ITF86130SK8T MS-012AA TB370 bv164 RS391 PDF

    lambda IC 101

    Abstract: AN7254 AN7260 ITF86172SK8T MS-012AA TB370 vj04
    Text: ITF86172SK8T interrii January. m i Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET File Number 4809.1 Features • Ultra Low On-Resistance Packaging ‘ rDS ON = 0 .0 1 6£i, v gs = - 1 0 V S 0 8 (JEDEC MS-012AA) ‘ rDS(ON) = 0.023i2, VGS = - 4 .5 V


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    MS-012AA) ITF86172SK8T ITF86172SK8T MS-012AA 330mm EIA-481 lambda IC 101 AN7254 AN7260 MS-012AA TB370 vj04 PDF

    TA49235

    Abstract: 20n03
    Text: integri I RFD20N03, RFD20N03SM D ata S heet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The R FD 20N 03 and R F D 20 N 03 S M N-Channel power M O S F E Ts are manufactured using the M egaFET process. J u ly 1999 F ile N u m b e r 4 3 5 0 .1 Features • 20A, 30V


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    RFD20N03, RFD20N03SM TA49235. TA49235 20n03 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30KMH-03 HIGH-SPEED SWITCHING USE ¡ FS30KMH-03 OUTLINE DRAWING Dimensions in mm +0 / ./ / ' / ' • 2.5V DRIVE • VD S S . •■ 30V • rDS ON (MAX) .


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    FS30KMH-03 O-220FN PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET FX70KMJ-03 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dim ensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE • V d s s .-30V • rDS ON (MAX) . 12.3m ii


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    FX70KMJ-03 O-220FN PDF

    F10P03QL

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 11A/20— 30V C10P02QL C10P03QL F10P02QL F10P03QL FEATURES ° Similar to T0-220AB Case 0 Fully Molded Isolation F-Type • Extremely Low Forward Voltage Drop » Dual Diodes - Cathode Common ° Low Power Loss, High Efficiency 0 High Surge Capability


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    T0-220AB 1A/20-- C10P02QL C10P03QL F10P02QL F10P03QL F10P03QL PDF