0004BB3 Search Results
0004BB3 Datasheets Context Search
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sts37e
Abstract: EP600IPC-45 EP600IDC-45 EP600IPC-55 altera ep610 5c060 EP600IDM883B55 ep600ilc ep600i EP600IDC45
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EP600I 5C060 16-macrocell EP610 STS37E EP600IPC-45 EP600IDC-45 EP600IPC-55 altera ep610 EP600IDM883B55 ep600ilc EP600IDC45 | |
EP600IPC-45
Abstract: 5962-8686401la ep600i Altera Classic EPLDs altera ep610
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EP600I 5C060 16-macrocell EP610 EP600IPC-45 5962-8686401la ep600i Altera Classic EPLDs altera ep610 | |
Contextual Info: FU JI 2SK2641-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Q 10A 100W Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 4.5 > Applications |
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2SK2641-01 0004bb3 | |
bfr 547
Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39
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fl235bOS bfr 547 Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39 | |
Transistor BFr 99
Abstract: Transistor BFR 96 transistor 2sc 548
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fl235bOS Transistor BFr 99 Transistor BFR 96 transistor 2sc 548 | |
Contextual Info: niCRON TECHNOLOGY INC SSE D b l l l S 1*1? OODMbS? bTS M T2D18 1 MEG X 8 DRAM M O DULE MICRON • IMRN TECHNOLOGY. INC. -\5 £ DRAM MODULE 1 MEG X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line |
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T2D18 MT2D18) MT2D18 30-pin, 450mW 024-cycle CYCLE28 MT2D16 MT2D18 | |
ISO 8015
Abstract: 2SK2641-01
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2SK2641-01 0004bb3 ISO 8015 | |
RCN 723
Abstract: 0340L ci5 cross reference ez 948 TXC CXO
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TXC-03401B 0004b75 RCN 723 0340L ci5 cross reference ez 948 TXC CXO | |
Contextual Info: S ta n d a r d P r o d u c t PMC I PMC-Sierra, Inc. I / 1 ^ * ISSUE 4 P M 8313D 3M X M13 MULTIPLEXER FEATURES • Integrates a full featured M13 multiplexer and DS-3 framer in a single monolithic device. • Supports the M23 or C-bit parity DS3 formats. • Supports the M12 or G.747 formats allowing DS1 or E1 signals to be multiplexed |
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8313D G47S1 8313D3M 0GD47S2 | |
sony cx 168Contextual Info: 54E So n y. î 03Û23Ô3 DDDMbS? Ì5 S ISONY CXK58257AP/AM -70U</85LX/10LX/12LX -70LLX/85LLX/1OLLX/12LLX * 32768-word x 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT PRODS Description CXK58257AP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and |
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CXK58257AP/AM -70LLX/85LLX/1OLLX/12LLX 32768-word CXK58257AP CXK58257AM CXK58257AP/AM-70LX 70LLX CXK58257AP/AM-85LX 85LLX sony cx 168 |