Untitled
Abstract: No abstract text available
Text: *7 0 / 4N54 Hermetic Hexadecimal Display With Logic Texas Optoelectronics, Inc. DESCRIPTION A hermetically sealed solid-state hexadecimal display with on-board memory latch, decoder and driver. The 4N54 decodes positive 8421 BCD logic inputs and displays the appropriate hexadecimal character
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MIL-D-87157
000D524
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Untitled
Abstract: No abstract text available
Text: TIES06 Gallium Arsenide Infrared-Emitting Diodes DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • Spectrally Matched to Silicon Sensors . . . Peak Emission at 910 nm • Circular, Consistent-Size, Flat Emitting Areas . . . 7.5 Mils Diameter
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TIES06
flRb3R34
000D524
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Untitled
Abstract: No abstract text available
Text: TIEF150, TIEF151, TIEF152 Low-Noise High-Speed Transimpedawce Amplifiers Texas Optoelectronics, Inc. O PTO ELECTRO N IC INTERFACE CIR C U IT S FOR A P P L IC A T IO N S SU C H A S FIBER OPTICS, L A S E R R A N G E F IN D E R S A N D O PTICA L C O M M U N IC A T IO N S
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TIEF150,
TIEF151,
TIEF152
000D524
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Untitled
Abstract: No abstract text available
Text: T0X9100 Silicon PIN Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES This is a silicon PIN photodiode designed for detection of infrared radiation in short length fiber optic and other applications. It is packaged in a modified TO-52 hermetic can which fits
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T0X9100
000D524
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Untitled
Abstract: No abstract text available
Text: •7 0 1 T O X 9000 Gallium A lu m in u m A rs e n id e Lig h t Em itting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES This is a high radiance GaAIAs IR LED for applications requiring high power from a point source and fast response time. ABSOLUTE MAXIMUM RATINGS
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000D524
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Silicon Photocells
Abstract: S1010 photocell encoder silicon photocell Silicon Sensors, Inc s05025 s1020 S0520
Text: Silicon Photocell Sensors Texas Optoelectronics, Inc. SILICON PHOTOCELL SENSORS TOI silicon photocells are employed in photometer, switching, position detection, tape and disc EOTBOT sensing, solar energy conversion, and other numerous applications. Silicon photosensors with
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S05025
S0505
S0510
000D524
Silicon Photocells
S1010
photocell encoder
silicon photocell
Silicon Sensors, Inc
s1020
S0520
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Untitled
Abstract: No abstract text available
Text: im tu t TOX 9111/TOX 9112 Silicon Photodiodes Toxam Formerly S37/S38 DESCRIPTION FEATURES The TOX 9111 and TOX 9112 large area p-silicon photodiodes are used in many laser and infrared systems. These detectors feature low noise and high responsivity. Both use guard ring
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9111/TOX
S37/S38
000D524
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Untitled
Abstract: No abstract text available
Text: TOX 9007 P-N Gallium Arsenide Infrared-Emitting Diode «7 0 # Taxas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9007 is a 940 nm emitter designed for short distance point to point data transmission and position sensing. Designed to emit near-infrared radiation
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MIL-S-19500,
9007TX
000D524
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Untitled
Abstract: No abstract text available
Text: AVG Semiconductors DDi" Technical Data Available Q 2 ,1995 DV74HC365, DV74HCT365 DV74HC367, DV74HCT367 Hex Tri-State Buffer These devices are High Speed Non-Inverting Buffers. Both devices have active-low enables. All six gates are controlled in the HC365, 2-Bits and 4-Bits are seperately
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DV74HC365,
DV74HCT365
DV74HC367,
DV74HCT367
HC365,
HC367.
AVG-003
AVG-004
1-800-AVG-SEMI
000D524
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Untitled
Abstract: No abstract text available
Text: D77 Series - 53 mm B a s ic D im e n s io n s F ra c tio n a l D im e n s io n s D e cim a l D im e n s io n s UP TO 1 /4 ± 1 /1 2 8 ± .003 OVER 1 /4 TO 8 ± 1 /6 4 ± 005 OVER 8 ± 1 /3 2 ± .010 Dimensionsal Tolerances Unless Otherwise Specified May Vary
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D7780
D7780ZOV131RA490
Z0V141RA530
7780Z0V151R
7780Z0V181R
7780Z0V231R
Z0V251RA800
7780ZOV271RA860
7780ZOV301RA940
7780Z0V321R
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Untitled
Abstract: No abstract text available
Text: *7 0 # TOX 9009 Gallium Aluminum Arsenide Light Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES High radiance GaAIAs IR LED optimized for coupling to a variety of fibers. The unique LED chip design combines high power coupling with wide bandwidth operation.
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000D524
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quadrant photodiode
Abstract: No abstract text available
Text: «Of T0X9108 Large Area Silicon Quadrant PIN Photodiode Taxas Optoelectronics, Inc. DESCRIPTION FEATURES Quadrant Geometry For Alignment and Tracking Applications Diameter of Active Area, 0.650 Inch Rise and Fall Times, 10 ns Typ at 900 nm Wavelength Dark Current 500 nA Typ per Quadrant
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T0X9108
000D524
IH375)
quadrant photodiode
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Untitled
Abstract: No abstract text available
Text: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEA TU R ES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages
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TIED87,
TIED88,
000D524
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A214 diode
Abstract: No abstract text available
Text: T0X 9005 P-N Gallium Arsenide Infrared-Emitting Diode WO# Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9005 is a 940 nm emitter designed for short distance point to point data transmission and position sensing. Designed to emit near-infrared radiation
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MIL-S-19500,
OX9005TX
000D524
A214 diode
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Untitled
Abstract: No abstract text available
Text: TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED59 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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TIED59
TIED59
TIED56
000D524
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Untitled
Abstract: No abstract text available
Text: «O I T0X9107 Silicon PIN Photodetector Taxas Optoelectronics, Inc. DESCRIPTION FEATURES • • • • The TOX 9107 is a large area, broad band detector application for both m ilitary and commercial users including HeNe and GaAs laser systems fo r range finding, data
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T0X9107
C30810
000D524
IH375)
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Untitled
Abstract: No abstract text available
Text: T0X9109 Silicon PIN Detector m i- m i Texas Optoelectronics, Inc. lllll m V v l DESCRIPTION FEATURES The TOX 9109 is a low noise, high speed quadrant high resistivity P-type silicon detector. Low noise is aided by the guard ring construction. Normally operated in the fully depleted mode higher
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T0X9109
000D524
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Untitled
Abstract: No abstract text available
Text: TOX 9110 Silicon PIN Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The T O X 9110 is a high-resistivity silicon PIN detector used in military and commercial light sensor applications. Designed to have high performance from 0.9 yum to 1.06 //m . The TO X
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000D524
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DP LED 714
Abstract: No abstract text available
Text: m H ill f f m !• I # ■ 4N56 Hexadecimal Display With Logic Texas Optoelectronics, Inc. HERMETICALLY SEALED SOLID-STATE HEXADECIMAL DISPLAY WITH INTEGRAL TTL CIRCUIT TO ACCEPT, STORE, AND DISPLAY 4-BIT BINARY DATA • Available with Screening in Accordance
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IL-D-87157,
4N56-TXV
62-mm
300-Inch)
Cond210)
000D524
IH375)
DP LED 714
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Untitled
Abstract: No abstract text available
Text: TIED56 Avalanche Photodiode Taxas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the
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TIED56
TIED56
000D524
IH375)
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Untitled
Abstract: No abstract text available
Text: T0X 9006 Gallium Aluminum Arsenide Infrared-Emitting Diode WO# Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9006 is a GaAIAs emitter designed to emit near-infrared radiation when forward biased. Output spectrally compatible with silicon sensors
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MIL-S-19500,
9006TX
000D524
IH375)
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