001444B Search Results

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Skyworks Solutions Inc 549CAAC001444BBG XTAL OSCILLATOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	549CAAC001444BBG				50	1 - 10 - 100 $14.1514 1000 $14.1514 10000 $14.1514	Buy Now
Skyworks Solutions Inc 549CAAC001444BBGR XTAL OSCILLATOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	549CAAC001444BBGR	Reel			250	1 - 10 - 100 - 1000 $13.68824 10000 $13.68824	Buy Now

001444B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: AM I. S44278 u-Law Asynchronous Codec STANDARD PRODUCTS Single Chip Codecs With Filters February 1993 General Desriptlon The S44278 is a monolithic CMOS Codec suitable for PABXs and Digital Key Telephone Sets, etc. Pin Configuration Block Diagram r ts > r i	OCR Scan	S44278	PDF
Untitled Abstract: No abstract text available Text: _ INTEGRATED D E V I C E bflE D IDT 4A25771 0 0 m M 3 T G5S PRELIMINARY IDT7MP4120 1M x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-density 4MB Static RAM module • Low protile 72-pin ZIP Zig-zag In-line vertical Package	OCR Scan	4A25771 IDT7MP4120 72-pin IDT7MP4120 001444b 7MP4120	PDF
Untitled Abstract: No abstract text available Text: n n IN T E G R A T E D C IR C U IT S h i U M ITR O D E UC1854 UC2854 UC3854 High Power Factor Preregulator Control Boost PWM to 0.99 Power Factor Limit Line Current Distortion To <5% World-Wide Operation Without Switches Feed-Forward Line Regulation Average Current-Mode Control	OCR Scan	UC1854 UC2854 UC3854 UC1854 U-134	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung	OCR Scan	7Tfcj4142 KMM581000AN 581000AN 81000A KM44C1OOOAJ 20-pin 30-pin 581000AN- 130ns	PDF
Untitled Abstract: No abstract text available Text: PowerMOS transistor_ F AMER PHILIPS/DISCRETE BUZ31 DbE D • LbS3T31 0014444 ~1 ■ rsi-n May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ31 LbS3T31 T-39-11 BUZ31_ 001444c	PDF