Wf VQE 23 F
Abstract: WF VQE 23 E WF VQE 12 WF VQE 13 wf vqe 23 TIP42AF TIP41 41AF wf vqe 14 e TIP42CF
Text: TIP41F; 41AF TIP41BF; 41CF PHILIPS INTER N A T I O N A L SbE ]> • 711DôEb 004352b TOS ■ P H I N T~33 ~ 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.
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TIP41F;
TIP41BF;
711DfiEb
004352b
OT186
TIP42F,
TIP42AF,
TIP42BF
TIP42CF.
TIP41F
Wf VQE 23 F
WF VQE 23 E
WF VQE 12
WF VQE 13
wf vqe 23
TIP42AF
TIP41
41AF
wf vqe 14 e
TIP42CF
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BF120
Abstract: No abstract text available
Text: TIP41F; 41AF TIP41BF; 41 CF PHILIPS INTERNATIONAL 5bE J> • 711002b 004352b TOS M P H I N T~33 ~ 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are T IP 4 2 F , T IP 4 2 A F , T IP 42B F and T IP 42C F.
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TIP41F;
TIP41BF;
711002b
004352b
100TIP41F;
D0M3531
T-33-09
BF120
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BDT61
Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
Text: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.
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BDT61
BDT61B
711002b
DG43550
BDT60,
711005b
7Z82099
dg43550
BDT60
QGM3221
diagram DARLINGTON
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Untitled
Abstract: No abstract text available
Text: SbE D • 0041S2S T3 1 m sgth S G S-THOMSON r - i l -0 1 1 N 8 2 1 , A - > 1 N 8 2 9 ,A S G S -T H O M S O N UKBTTBM O TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON ■ TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values
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0041S2S
500mA
380ns
500mA
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