diode t62

Contextual Info: BDT62;-62A BDT62B; 62C J PHILIPS INTERNATIONAL SbE ]> • 7110fl2b 0043S3Ö TÔ4 M P H I N T - 3 3 - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are B D T63,

IR TRANSISTOR

Abstract: PGI386 2N40 2N4070 PG1384 PGI380 PGI381 PGI382 PGI383 PGI385
Contextual Info: ,0043592 - v .' •■' ë * . A-' v-j- t; : , ” . A P I E L E C T RONICS I NC DE |0043Scia D00 D1 E0 a 13 _ 1 3 A 0 1 2 0 ITj t e r i m T ~ ^ 3 " // b u l l e t in S u b je ct to Revision Without N otice. z i f r i ' s * * 1•- ‘• -July 20, 1971

Contextual Info: nn4^q92 A P I A P I ELECTRONICS 13A0133 ELECTRONICS INC" INC IB De J 0043STB DD00133 D J l POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP TO-5 100V at 100mA XCEK 100|i,A max at VB E off =1.5V, V QE=100V ICBO 100[xA at 100V XEBO 0.5mA at 7V HPE < 40 min at Ic=100mA, V CE=1V

Contextual Info: TOSHIBA TMP90CH42/CK42 CMOS 8-BIT MICROCONTROLLER TMP90CH42DF / TMP90CK42DF 1. OUTLINE AND CHARACTERISTICS The TMP90CH42 / CK42 is an advanced, highly integrated 8-bit Microcontroller developed for application w ith software servos. In addition to basics such as I/O ports, the configuration also includes a high-speed,

TIP126

Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
Contextual Info: _ PHILIPS INTERNATIONAL TIP125 TIP126 TIP127 J{ SbE ]> • 711DÖEL 0D435bfl M b 4 M P H I N T-33-ZI SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxiai-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T 0-22 0 plastic envelope. N-P-N complements are TIP120, TIP121

PG1286

Abstract: NPN 200 VOLTS POWER TRANSISTOR RG-126 PG1250 PG1251 PG1252 PG1253 PG1254 PG1257 PG1264
Contextual Info: • ,0043592 A P I ELECTRONICS INC " A P I ELECTRONICS INC 13A0097 T ~ 3 }~ q ? 13 D E | ODHBSTS 000QCH7 0 T - ' IN T E R IM B U L L E T IN S u b je ct to Revision W ith o u t N otice _ -J u ly 15,1971 TYPE P 1250 thru PG1252, 5 AMP NPN

EP1024

Abstract: GC112 EP1014 EP1019 ha17 series LP1014 LP1016 LP1017 LP1018 LP1019
Contextual Info: HYPERABRUPT - ABRUPT UHF-MICROWAVE TUNING DIODES electronics i n c designed for electronic tuning and control applications in the UHF and lower microwave frequency ranges. * S E R IE S M V205 M V 20S LP1 01 4-1 0 3 8 C P I O f 4 *1 0 3 8 LOW INDUCTANCE PLANAR CONSTRUCTION

Contextual Info: IN T E G R A T E D C I R C U I T S PZ3064 64 macrocell CPLD Prelim inary specification Philips Semiconductors 1996 Nov 19 PHILIPS Philips Sem iconductors Prelim inary specification 64 m a c r o c e l l C P L D PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and

Wf VQE 23 F

Abstract: WF VQE 23 E WF VQE 12 WF VQE 13 wf vqe 23 TIP42AF TIP41 41AF wf vqe 14 e TIP42CF
Contextual Info: TIP41F; 41AF TIP41BF; 41CF PHILIPS INTER N A T I O N A L SbE ]> • 711DôEb 004352b TOS ■ P H I N T~33 ~ 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.

TIP135

Abstract: TIP136 TA76 TIP130 TIP131 TIP132 TIP137
Contextual Info: TIP135 TIP136 TIP137 PHILIPS INTERNATIONAL SbE D • 711002t. 00L<35aa Tbl T -3 3 ■ P H IN 3 I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general am plifier and switching applications. TO-220AB plastic envelope. N-P-N equivalents are TIP130

skt 230

Abstract: stt 128
Contextual Info: 1. Schematic: RJ45 JACK 5 5 p f 2000pF S 1500 V 1H 1' 1Hi1 ZO O O pF 2 . E le ctrical Is o la tio n : ¿ 4 S p e c i f i c a t i o n s : 25 C 1:1 ±3 % Typical @1QKHz DC R e s is ta n c e : 0 .5 0 0 C om m on 1500V 5 0 0 V rm s Turns R atio : OCL: 4m H

TIP33

Contextual Info: TIP33; A; B; C T -33-13 v_ PHILIPS INTERNATIONAL SbE D • 711GÛ2b DD43SDb 117 « P H I N SILICON POWER TRANSISTORS N-P-N epitaxial-base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are

dg432

Contextual Info: BDT60;60A BDT60B;60C SbE T> PHILIPS INTERNATIONAL • 711002b 00432G4 bTl HIPHIN T- 33- ? SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.

TIP33

Abstract: TIP-33 TIP33A-TIP33B-TIP33C TIP33C T1P34 TIP33A TIP33B TIP34A TIP34B TIP34C
Contextual Info: TIP33; A; B; C A V PHILIPS INTERNATIONAL SLE ]> 3 3 ^ /3 •! 7110flEL GDM3SDb 117 ■ PHIN SILICON POWER TRANSISTORS N-P-N epitaxial-base power transistors in the plastic SOT-93 envelope. These transistors are intended fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P complements are

Contextual Info: IN T E G R A T E D C I R C U I T S PZ3064 64 macrocell CPLD Prelim inary specification Philips Semiconductors 1996 Nov 04 PHILIPS Philips Sem iconductors Prelim inary specification 64 m a c r o c e l l C P L D PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and

Contextual Info: TIP115 TIP116 TIP117 _ V PHILIPS INTERNATIONAL SbE ]> • V _ 711DûEb OÜ43S5b 742 ■ PHIN SILICON DARLINGTON POWER TRANSISTORS r -3 3 - 3 P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general

TIP42 philips

Abstract: T1P42B
Contextual Info: _ PHILIPS INTERN ATIONAL SbE D TIP42;A . _TIP42B;C 711GÖ2b GGM3S34 DÖ1 • PHIN ■ SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier

TIP41 amplifier

Abstract: TIP41 of TIP41 TIP41B TIP42 TIP42 ST TIP42 philips T-33-H
Contextual Info: TIP41 ;A TIP41 B;C PHILIPS INTERNATIONAL SbE ]> • 711Dä2b 0043510 W HPHXN~ T -J J -M SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. PNP complements are T IP42 series.

TIP130

Abstract: TIP131 TIP132 TIP135 TIP136 TIP137 W862
Contextual Info: TIP130 TIP131 TIP132 _ PHILIPS INTERNATIONAL SbE D m 711Dfl2t, 0043574 ^7bôV i P H I N 1 - 3 3 ' Z <r SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general

IN5448A

Abstract: 23128 1N54G 24128 S0MC 1N514C ha1822 ha11l1 MVI652 MV1620
Contextual Info: D & IS D HERM ETICALLY S E A L E D elect: A B R U P T - H Y P E R A B R U P T U» G L A S S P A C K A G ED TUNING D IO D ES E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 25» C unless otherwise noted LOW INDUCTANCE FOR USE TO 2 .5 GHz GENERAL APPLICATIONS

Contextual Info: TIP130 TIP131 TIP132 PHILIPS INTERNATIONAL SbE J> • 7110fl2t, D 0 4 3 5 7 4 7bô ¿ P H I N = 7^ 3 3 - 2. SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T 0 -2 2 0 A B plastic envelope. P-N-P equivalents are TIP135,

TIP34

Abstract: 34B SOT 1A05A TIP33 TIP33A TIP33B TIP33C TIP34A TIP34B TIP34C
Contextual Info: TIP34; A; B; C PHILIPS IN T E R N A T I O N A L SbE D m 711Gfl2fc. 0043512 410 M P H I N SIL IC O N P O W E R T R A N S IS T O R S P-N-P epitaxial-base power transistors in the plastic SO T -9 3 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications. N-P-N complements are

philips TIP142

Abstract: darlington TIP142 power amplifier philips TIP147
Contextual Info: TIP140 TIP141 TIP142 PHILIPS INTERNATIONAL SbE P B 711GflSb GD435flb 4ÖT H I P H I N T-33-z *T SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. P-N-P complements are TIP145, TIP146

BF120

Contextual Info: TIP41F; 41AF TIP41BF; 41 CF PHILIPS INTERNATIONAL 5bE J> • 711002b 004352b TOS M P H I N T~33 ~ 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are T IP 4 2 F , T IP 4 2 A F , T IP 42B F and T IP 42C F.