tms4256
Abstract: TMS4266
Text: INSTR TM4256EL9, TM4256GU9 262,144 BY 9-BIT DYNAMIC BAM MODULES 7“-ifc-23-/7 25E D SEPTEMBER 1986 — REVISED M ARCH 1968 A SIC /MEMORY 262,144 x 9 Organization TM4266EL9 . . . L SMQLE-IN-UNE PACKAGE (TOP VIEWl_ Slngla 5-V Supply (10% Tolerance)
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U17ES
077GC
TM4256EL9,
TM4256GU9
-ifc-23-/7
TM4266EL9
30-Pln
TM4256EL9)
TM4266GU9)
tms4256
TMS4266
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AX2022
Abstract: TACT2150 D6142
Text: TACT2150 512 X 8 CACHE ADDRESS COMPARATOR D 2 9 9 3 . JA N U A R Y 1 9 8 7 - R E V IS E D SEPTEM BER 1967 Address to MATCH Valid Time TACT2150-20 . . . 20 ns max TACT2150-30 . . . 30 ns max DW, JD . OR NT PACKAGE 300-Mil 24-Pin Ceramic Side-Brazed or Plastic Dual-In-Line or Small Outline
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TACT2150
300-Mil
24-Pin
AX2022
D6142
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ltl17
Abstract: No abstract text available
Text: flTblTSS 0 0 7 7 0 0 2 0 TM4256FC1 1,048,576 BY 1B IT DYNAMIC RAM MODULE INS TR A SIC /MEMORY OCTOBER'19 9 5 —REVISED FEBRUARY 1988 BSE D 1 ,0 4 8 ,5 7 6 x 1 Organization TM 4266FC 1 . . C SINGLE-IN-LINE PACKAGE (TOP VIEW) Single 5-V Supply (10 % Tolerance)
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TM4256FC1
4266FC
22-Pin
ltl17
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PDF
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27c eeprom
Abstract: 27C291 74TTL
Text: 0^1755 DG77HS TMS27C291, TMS27C292 16,384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ ONLY MEMORY SEPTEMBER 1988-R EV ISED APRIL 1988 • Single 5-V Power Supply • Pin Compatible with Existing 2K x 8 BIpolar/High-Speed CMOS EPROMs
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DG77HS
TMS27C291,
TMS27C292
384-BIT
TMS27PC291
1988-R
27C/PC291-3
27C292-3
27C/PC291
27c eeprom
27C291
74TTL
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PDF
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Untitled
Abstract: No abstract text available
Text: TEXAS INSTR -CASIC/MEMORY} Ì7 Ô Ë | flìtlTES D074Ô31 □ 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY FEBRUARY 1988 262,144 x 4 Organization JD PACKAGE TOP VIEW Performance Ranges: AC C ESS AC C ESS AC C ESS TIM E TIM E TIM E • e 4 5 ns *a(CA)
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OCR Scan
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144-WORD
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PDF
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80C31 instruction set
Abstract: EXIF-91h
Text: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM
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DS80C320
80C32-Compatible
10X10X2
abl4130
44-PIN
2bl413G
80C31 instruction set
EXIF-91h
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PDF
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TMS4256FML
Abstract: k2000c
Text: I ôTblTSS 0D?7Gaa 1 • ASIC/ ME MOR Y x.' 8 Organization UtHizes Eight 256K Dynamic RAMs In Plastic Chip Carrier Long Refresh Period . . . 4 ms (266 Cycles) All Inputs, Outputs, Clocks Fully TTL Compatible 3-State Outputs Performance of Unmounted RAMs
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TM4256FL8,
TM4256GU8
30-Pin
TM4250FL8)
TM42560U8)
TMS4256-10
TMS4268-12
TMS4266-16
TMS4256FML
k2000c
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PDF
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10MILLISECOND
Abstract: A1176 TMS2732A
Text: TMS2732A 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY A U G U ST 1 9 8 3 —R EV ISED FEB R U A R Y 198 8 Organization . . . 4096 x 8 J PACKAGE TOP VIEW Single 5-V Power Supply • All Inputs/Outputs Fully TTL Compatible • Max Access/Min TM S2732A-17
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TMS2732A
768-BIT
S2732A-17
S2732A-20
S2732A-25
S2732A-45
10MILLISECOND
A1176
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PDF
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TMS4500
Abstract: TMS4500A
Text: TM S4500A DYNAMIC RAM CONTROLLER D 2 6 7 4 , JA N U A R Y 1 9 8 2 TMS4500A . . . N PACKAGE Controls Operation of 8K, 16K. 3 2 K , and 6 4 K Dynam ic RAMs TOP VIEW One Package Contains Address M ultiplexer, Refresh Control, and Timing Control Operates from Microprocessor Clock
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S4500A
TMS4500
TMS4500A
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PDF
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tms4256fml
Abstract: No abstract text available
Text: TEXAS SU 172S INSTR 0D7707ti S • 262,144 ASIC/MEMORY 5SE TM4256EC4 BY 4-BIT DYNAM IC RAM M ODULE (TOP VIEW) Single 5-V Supply (10% Tolerance) A8 22-Pin Single-In-line Package (SIP) D1 Q1 CAS A7 A5 A4 Long Refresh Period . . . 4 ms (256 Cycles) All Inputs, Outputs, Clocks Fully TTL
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0D7707ti
TM4256EC4
22-Pin
tms4256fml
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PDF
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TMS44C256
Abstract: TMS44C256-10 bojf tms44c251
Text: • a ^ L lT S S Q O T b 'n ? Q ■ TMS44C256, TMS44C257 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES INSTR 2 SE ASIC/MEMORY N PACKAGE (TOP VIEW) 262,144 x 4 Organization Single 5-V Supply (10% Tolerance) DQlC 1 Ü 20 ]Vss DQ2[ 2 193 004 wC 3 18 ]DQ3
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OCR Scan
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TMS44C256,
TMS44C257
144-WORD
TMS44C25
TMS44C
TMS44C2S
TMS44C256
512-Cycle
TMS44C256-10
bojf
tms44c251
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PDF
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RY25
Abstract: 27C010-25 TMS27C010
Text: • 0^1725 0Q77531 2 ■ TMS27C010 1,048,576-BIT UV ERASABLE PROGRAMMABLE READ ONLY MEMORY TEXAS INSTR ASIC/MEMORY 2SE > Organization . . . 128K x 8 (TOP VIEW ) v p p C 1 U 32 ] v c c 31 ] P G M A16C 2 30 ] N C A15[ 3 29 ] A 1 4 A12[ 4 28 ] A 1 3 A7Ü 6
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0Q77531
TMS27C010
576-BIT
32-Pin
27C010-170
27C010-200
27C010-250
27C010-300
RY25
27C010-25
TMS27C010
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PDF
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BUW11
Abstract: BUW11A buw11 transistor philips rf transistors buw111
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11 ; BUW11A High-voltage, high-speed, glass-passivated npn power transistors in a S0T93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.
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OCR Scan
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BUW11;
BUW11A
S0T93
BUW11
711002b
0777b?
BUW11A
buw11 transistor
philips rf transistors
buw111
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PDF
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Untitled
Abstract: No abstract text available
Text: 6^1725 SN54ALS229A, SN74ALS229A 1 6 X 5 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES TEXAS INSTR A S I C / flEM0 R Y 2SE D SN54ALS229A . . . J PACKAGE SN74ALS229A . . . DW OR N PACKAGE muapenae.ni Asychronous Inputs and Outputs I D2876 , MARCH 1986 —REVISED MAY 1986
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OCR Scan
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SN54ALS229A,
SN74ALS229A
SN54ALS229A
D2876
15HQ1
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PDF
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BUW11A
Abstract: d777b BUW11 transistor BU 102
Text: Product specification Philips Semiconductors BUW11; BUW11A Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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BUW11;
BUW11A
BUW11
7110fl5b
GD777b8
BUW11A
d777b
transistor BU 102
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PDF
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Untitled
Abstract: No abstract text available
Text: | m o t e x 2.36mm .093" Diameter ^ ^ Power Connector FEATURES AND SPECIFICATIONS Features and Benefits Electrical • Positive lock Voltage: 600V Current: 12.0A per circuit ■ Fully isolated terminals ■ Polarized housing assures proper mating K e C e p iO C ie
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OCR Scan
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E29179
LR19980
UL94V-0
R75107
00777b
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PDF
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TMS4C1024
Abstract: TMS4C1025-80 TMS4C1024-80 TMS4C1024-12 TMS4C1024/5/7S
Text: TMS4C1024, TMS4C1025, TMS4C1027 1 048 576-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M G S 0 2 4 F — MAY 1986 — R E V IS E D N O V E M B E R 1990 1 048 576 x D[ 1 W[ 2 1 Organization U RAS [ 3 Single 5-V Supply 10% Tolerance Performance Ranges: TMS4C1024-60
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OCR Scan
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TMS4C1024,
TMS4C1025,
TMS4C1027
576-BIT
TMS4C1024/5/7S
TMS4C1024
TMS4C1025-80
TMS4C1024-80
TMS4C1024-12
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PDF
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Untitled
Abstract: No abstract text available
Text: • flU1725 GG774C15 fl ■ 1 SN74BCT2827A, SN74BCT2828A 10-BIT BUSfMOS MEMORY DRIVERS WITH 3-STATE OUTPUTS D 2 9 7 7 , APRIL 1 9 8 7 -R Ê V IS E D APRIL 1 9 8 8 5SE D DW OR NT PACKAGE TOP VIEW BICMOS Design Substantially Reduces Standby Current 25-0 Series Resistors at Outputs
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OCR Scan
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flU1725
GG774C
SN74BCT2827A,
SN74BCT2828A
10-BIT
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PDF
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Untitled
Abstract: No abstract text available
Text: 1K x SN74ACT2151, SN74ACT2153 11 CACHE ADDRESS COMPARATORS _ D 3105, SEPTEM BER 19 8 7 -R E V iS E D MARCH 1990 Fast Address to Match Delay . . . 22 ns Max N PACKAGE TOP VIEW On-Chip Address/Data Comparator u R ESET [ 1 A4 [ A3 [ A2 [ A1 [ AO [ DO [
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OCR Scan
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SN74ACT2151,
SN74ACT2153
ACT2151)
ACT2153)
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PDF
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Untitled
Abstract: No abstract text available
Text: • 0^1725 007715=1 T ■ T-46-13-25 TMS27C49 65,536-BIT UV. ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC49 65,536-BIT PROGRAMMABLE READ-ONLY MEMORY A SI C/M EMO RY 5SE I> EPROMs/PROMs/EEPROMs TE XAS IN ST R . Te x a s ^ In s t r u m e n t s PO ST OFFICÊ B O X 1443 • HOUSTON, T É X A S 77001
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OCR Scan
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T-46-13-25
TMS27C49
536-BIT
TMS27PC49
00771bG
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PDF
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ba7 transistor
Abstract: BUV90F lg system ic
Text: Product specification Philips Semiconductors Silicon Diffused Darlington Power Transistor BUV90F GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.
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OCR Scan
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BUV90F
OT199
ThsS25
711DflBb
OT199;
711Gfl2b
00777b0
ba7 transistor
BUV90F
lg system ic
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PDF
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PDIP20
Abstract: PS020 ST626X-EMU ST62T08 b 0334
Text: F Z J S G S -T H O M S O N *7*. U ü lf lg lB O IlL llC T M D ® ST62T08 8-BIT OTP MCUs PRELIM INARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6 .0 V Supply Operating Range 8 MHz Maximum Clock Frequency -40 to +85°C Operating Temperature Range
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OCR Scan
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ST62T08
PDIP20
PS020
ST626X-EMU
ST62T08
b 0334
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PDF
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LR19980
Abstract: No abstract text available
Text: m o i e x 2.36mm .093" Diameter Power Connector Receptacle FEATURES AND SPECIFICATIONS Features and Benefits Electrical • ■ ■ ■ Voltage: 600V Current: 12.0A per circuit Dielectric Withstanding Voltage: 5000V AC rms Positive lock Fully isolated terminals
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OCR Scan
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E29179
LR19980
R75107
UL94V-0
LR19980
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PDF
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TMS44C256
Abstract: sn74als6302 TMS4C1024 TMS4C1025-12 S4C1024 190TW TM024EAD9 tms*1024 TMS4C1024-12
Text: 0 ^ 1 7 5 5 007702=1 7 • TMS4C1024, TMS4C1025, TMS4C1027 1,048,576-BIT DYNAMIC RANDOM-ACCESS MEMORIES TEXAS INSTR N PACKAGE TOP VIEW 1,048,676 x 1 Organization Single 5-V Supply (10% Tolerance) • ACCESS ACCESS ACCESS TIME TIME TIME TMS4C102-10 TMS4C102.-12
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OCR Scan
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TMS4C1024,
TMS4C1025,
TMS4C1027
576-BIT
86-flE
TMS4C102--10
TMS4C102
TMS4C1024--Enhanced
TMS44C256
sn74als6302
TMS4C1024
TMS4C1025-12
S4C1024
190TW
TM024EAD9
tms*1024
TMS4C1024-12
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PDF
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