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    Untitled

    Abstract: No abstract text available
    Text: IB M 0 1 1 6 4 B 0 IB M 0 1 1 6 4 D 0 4M x 4 Stacked DRAM Features • 4 ,194,304 word by 4 bit organization by 2 High • Package: • 4 ,194,304 word by 4 bit organization by 4 High • Low Power Dissipation per deck - Active (max) - 85m A/75m A - Standby (TTL Inputs) - 2.0m A (max)


    OCR Scan     		PDF 400milx825mil) IBM01164B0 IBM01164D0 00034D3

    Untitled

    Abstract: No abstract text available
    Text: IBM01164B0 01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High Low Power Dissipation per deck - Active (max) - 85mA/75mA - Standby (TTL Inputs) - 1 .0mA (max) - Standby (CMOS Inputs) - 1 ,0mA (max) • 4,194,304 word by 4 bit organization by 4 High


    OCR Scan     		PDF IBM01164B0 IBM01164D0 85mA/75mA 110ns 130ns

    CMOS 4727

    Abstract: R 4727 IS3015 01164d 4727
    Text: IBM01164B0 01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High Low Power Dissipation per deck - Active (max) - 85m A/75m A - Standby (TTL Inputs) - 1 .OmA (max) - Standby (C M O S Inputs) -1 .OmA (max) • 4,194,304 word by 4 bit organization by 4 High


    OCR Scan     		PDF IBM01164B0 IBM01164D0 110ns 130ns 400mil 825mil) 28H4727 GA14-4248-01 IBM01164D0 CMOS 4727 R 4727 IS3015 01164d 4727

    Untitled

    Abstract: No abstract text available
    Text: 01164D0 IBM01164B0 01164D0B IBM01164B0B 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High • 4,194,304 word by 4 bit organization by 4 High • Single 3.3V or 5.0V power supply • Low Power Dissipation per deck - Active (max) - 45mA


    OCR Scan     		PDF IBM01164D0 IBM01164B0 IBM01164D0B IBM01164B0B