IBM0116400M
Abstract: No abstract text available
Text: IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM01164B0 IBM01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High • Package: • 4,194,304 word by 4 bit organization by 4 High • Low Power Dissipation per deck
|
Original
|
IBM0116400M
IBM0116400P
IBM01164B0
IBM01164D0
85mA/75mA
TSOJ-32
400milx825mil)
|
PDF
|
IBM0116400M
Abstract: No abstract text available
Text: IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM01164B0 IBM01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High • 4,194,304 word by 4 bit organization by 4 High • Single 3.3V or 5.0V power supply
|
Original
|
IBM0116400M
IBM0116400P
IBM01164B0
IBM01164D0
85mA/75mA
110ns
130ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IB M 0 1 1 6 4 B 0 IB M 0 1 1 6 4 D 0 4M x 4 Stacked DRAM Features • 4 ,194,304 word by 4 bit organization by 2 High • Package: • 4 ,194,304 word by 4 bit organization by 4 High • Low Power Dissipation per deck - Active (max) - 85m A/75m A - Standby (TTL Inputs) - 2.0m A (max)
|
OCR Scan
|
400milx825mil)
IBM01164B0
IBM01164D0
00034D3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IBM01164B0 IBM01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High Low Power Dissipation per deck - Active (max) - 85mA/75mA - Standby (TTL Inputs) - 1 .0mA (max) - Standby (CMOS Inputs) - 1 ,0mA (max) • 4,194,304 word by 4 bit organization by 4 High
|
OCR Scan
|
IBM01164B0
IBM01164D0
85mA/75mA
110ns
130ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IBM01164D0 IBM01164B0 IBM01164D0B IBM01164B0B 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High • 4,194,304 word by 4 bit organization by 4 High • Single 3.3V or 5.0V power supply Low Power Dissipation per deck - Active (max) - 45mA
|
OCR Scan
|
IBM01164D0
IBM01164B0
IBM01164D0B
IBM01164B0B
TSOJ-32
400mil
825mil)
|
PDF
|
CMOS 4727
Abstract: R 4727 IS3015 01164d 4727
Text: IBM01164B0 IBM01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High Low Power Dissipation per deck - Active (max) - 85m A/75m A - Standby (TTL Inputs) - 1 .OmA (max) - Standby (C M O S Inputs) -1 .OmA (max) • 4,194,304 word by 4 bit organization by 4 High
|
OCR Scan
|
IBM01164B0
IBM01164D0
110ns
130ns
400mil
825mil)
28H4727
GA14-4248-01
IBM01164D0
CMOS 4727
R 4727
IS3015
01164d
4727
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IBM01164D0 IBM01164B0 IBM01164D0B IBM01164B0B 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High • 4,194,304 word by 4 bit organization by 4 High • Single 3.3V or 5.0V power supply • Low Power Dissipation per deck - Active (max) - 45mA
|
OCR Scan
|
IBM01164D0
IBM01164B0
IBM01164D0B
IBM01164B0B
|
PDF
|