109-5310
Abstract: 109-5000 tyco 109-5103 thermo cable specification 101-B
Text: Product Specification 製品規格 108-78466 01OCT2007 Rev. A1 MICRO SLP Wire to Board Connector 2Pos, 0.8mm Pitch 1. 適用範囲 1.1 内容 本規格はWire to Board Connector 2pos,0.8mm Pitchの 製品性能試験方法、品質保証の必要条件を規定して
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01OCT2007
MIL-STD-202
100sec
60sec
70sec
109-5310
109-5000 tyco
109-5103
thermo cable specification
101-B
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notebook led display pinout
Abstract: tdk inverter keypad 3x4 decoder D405 voltage regulator AC037 D312 6 pin usb JP901 varitronix qvga ccfl backlight inverter 3x4 matrix keypad driver
Text: PHYTEC phyCORE-PXA270 Acceleration Carrier Board Hardware Manual Doc. No. L-701e_0 Prod. No. PCM-969 PCB No. 1289.0 September 18, 2007 A product of a PHYTEC Technology Holding company phyCORE-PXA270 Acceleration Carrier Board In this manual are descriptions for copyrighted products that are not explicitly
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phyCORE-PXA270
L-701e
PCM-969
phyCORE-PXA270
notebook led display pinout
tdk inverter
keypad 3x4 decoder
D405 voltage regulator
AC037
D312 6 pin usb
JP901
varitronix qvga
ccfl backlight inverter
3x4 matrix keypad driver
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Untitled
Abstract: No abstract text available
Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program
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M58LR128HT
M58LR128HB
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JESD97
Abstract: ST2329 ST2329QTR dis40
Text: ST2329 2-bit dual supply level translator without direction control pin Features • 90 Mbps max data rate when driven by a totem pole driver ■ 8 Mbps (max) data rate when driven by an open drain pole driver ■ Bidirectional level translation without
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ST2329
QFN10L
JESD97
ST2329
ST2329QTR
dis40
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CDM-AEC-Q100-011
Abstract: ISO7637 JESD97 VNQ5050AK-E VNQ5050AKTR-E
Text: VNQ5050AK-E Quad channel high side driver with analog current sense for automotive applications Features Max supply voltage VCC 41V Operating voltage range VCC 4.5 to 36V Max on-state resistance per ch. RON 50 mΩ Current limitation (typ) ILIMH 19 A Off state supply current
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VNQ5050AK-E
PowerSSO-24
20and
CDM-AEC-Q100-011
ISO7637
JESD97
VNQ5050AK-E
VNQ5050AKTR-E
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MJD122
Abstract: ST DARLINGTON TRANSISTOR Date Code Marking STMicroelectronics PACKAGE DPAK JESD97 MJD122-1 MJD122T4 MJD127 ST T4 0
Text: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)
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MJD122
O-251
O-252
MJD127.
MJD122T4n
MJD122
ST DARLINGTON TRANSISTOR
Date Code Marking STMicroelectronics PACKAGE DPAK
JESD97
MJD122-1
MJD122T4
MJD127
ST T4 0
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Untitled
Abstract: No abstract text available
Text: SDR5200S VOLTAGE 200V 5.0 AMP Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126A 7.6 0.2 FEATURES 2.65 0.15 φ 3.1 0.1 * Low forward voltage drop * High current capability * High reliability
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SDR5200S
O-126A
MIL-STD-202,
01-Oct-2007
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TDK inverter
Abstract: AC037 TX09D70VM1CCA PXA270 usb 12 key 3x4 KEYPAD 14 pin D405 voltage regulator schematic diagram inverter lcd monitor PXA270 jtag flash programming S301 X304
Text: PHYTEC phyCORE-PXA270 Acceleration Carrier Board Hardware Manual Doc. No. L-701e_1 Prod. No. PCM-969 PCB No. 1289.0 October 18, 2007 A product of a PHYTEC Technology Holding company phyCORE-PXA270 Acceleration Carrier Board In this manual are descriptions for copyrighted products that are not explicitly
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phyCORE-PXA270
L-701e
PCM-969
phyCORE-PXA270
LM-969
TDK inverter
AC037
TX09D70VM1CCA
PXA270 usb
12 key 3x4 KEYPAD 14 pin
D405 voltage regulator
schematic diagram inverter lcd monitor
PXA270 jtag flash programming
S301
X304
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SDR5150S
Abstract: No abstract text available
Text: SDR5150S VOLTAGE 150V 5.0 AMP Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126A 7.6 0.2 FEATURES 2.65 0.15 φ 3.1 0.1 4.0 0.4 * Low forward voltage drop * High current capability
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SDR5150S
O-126A
MIL-STD-202,
01-Oct-2007
SDR5150S
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Untitled
Abstract: No abstract text available
Text: ST2329 2-bit dual supply level translator without direction control pin Features • 90 Mbps max data rate when driven by a totem pole driver ■ 8 Mbps (max) data rate when driven by an open drain pole driver ■ Bidirectional level translation without
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ST2329
QFN10L
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Untitled
Abstract: No abstract text available
Text: ST2329 2-bit dual supply level translator without direction control pin Features • 45 Mbps max data rate when driven by a totem pole driver ■ 4 Mbps (max) data rate when driven by an open drain pole driver ■ Bidirectional level translation without
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ST2329
QFN10L
ST2329
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Untitled
Abstract: No abstract text available
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance
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M58BW16F
M58BW32F
M58BW32F
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VNQ5050AK-E
Abstract: vnq5050ak
Text: VNQ5050AK-E Quad channel high side driver with analog current sense for automotive applications Features Max supply voltage VCC 41V Operating voltage range VCC 4.5 to 36V Max on-state resistance per ch. RON 50 mΩ Current limitation (typ) ILIMH 19 A Off state supply current
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VNQ5050AK-E
PowerSSO-24
2002/95/EC
VNQ5050AK-E
vnq5050ak
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Untitled
Abstract: No abstract text available
Text: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK850 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK850
2002/95/EC
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SDR5200S
Abstract: No abstract text available
Text: SDR5200S VOLTAGE 200V 5.0 AMP Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126A 7.6 0.2 FEATURES 2.65 0.15 φ 3.1 0.1 * Low forward voltage drop * High current capability * High reliability
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SDR5200S
O-126A
MIL-STD-202,
01-Oct-2007
SDR5200S
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Untitled
Abstract: No abstract text available
Text: STB5701 350 to 400 MHz FSK/ASK receiver ST-RECORD01 family Preliminary Data Features • Multiband receiver: 350MHz to 400MHz ■ FSK/ASK modulation selection ■ Programmable multichannel ■ High dynamic range with On-Chip AGC ■ PLL and fully VCO integrated
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STB5701
ST-RECORD01
350MHz
400MHz
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TDA7528
Abstract: No abstract text available
Text: TDA7528 FM/AM car-radio receiver front-end for IF-sampling systems with fully integrated VCO Features • High-performance AM/FM front-end chip for IFsampling car-radio tuners ■ Compatible with AM LW, MW, SW / FM(EU, US, JAPAN, OIRT) / Weather Band / HD-Radio
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TDA7528
TDA7528
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F8800h-F8FFFh
Abstract: M58BW32FB
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers High performance – Access times: 45 and 55 ns
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M58BW16F
M58BW32F
M58BW32F
F8800h-F8FFFh
M58BW32FB
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M58LT256JSB
Abstract: CR10 M58LT256JST M58LT256JSB8
Text: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
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M58LT256JST
M58LT256JSB
TBGA64
M58LT256JSB
CR10
M58LT256JST
M58LT256JSB8
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M58BW32FB
Abstract: M58BW32F Q002 M58BW16FB M58BW16F M58BW16FT M58BW32FT PQFP80
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance
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M58BW16F
M58BW32F
PQFP80
M58BW32F
M58BW16F
M58BW32FB
Q002
M58BW16FB
M58BW16FT
M58BW32FT
PQFP80
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F9800h-F9FFFh
Abstract: M58BW32FB
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance
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M58BW16F
M58BW32F
M58BW32F
F9800h-F9FFFh
M58BW32FB
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JESD97
Abstract: K850 STK850
Text: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK850 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK850
2002/95/EC
JESD97
K850
STK850
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PDF
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Untitled
Abstract: No abstract text available
Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program
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M58LR128HT
M58LR128HB
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Untitled
Abstract: No abstract text available
Text: VNQ5050AK-E Quad channel high side driver with analog current sense for automotive applications Features Parameters Max supply voltage Symbol Value VCC 41 V Operating voltage range VCC 4.5 to 36 V Max on-state resistance per ch. RON 50 mΩ Current limitation (typ)
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VNQ5050AK-E
PowerSSO-24
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