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    PAL26V16

    Abstract: teradyne lasar
    Text: FINAL COM’L: -15/20 IND: -18/24 Z I Advanced Micro Devices M A C H 1 3 0 - 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 15 ns tpD Commercial


    OCR Scan     		PAL26V16" MACH131, MACH230, MACH231, MACH435 MACH130 PAL22V10 MACH130-15/20 55755b PAL26V16 teradyne lasar PDF

    14L4

    Abstract: 10l8 12L6 12H6 16c1 4511 logic diagram 1117 L schematic diagram PAL14L pin shourd PAL10H8
    Text: ADV MICRO PLA/PL E/ ARR AY S =ib U2 b7526 ADV MICRO P L A / P L E / ARRAYS D E | 055755b 0057114 7 96D 27114 D T-V6-/3-V7 Combinatorial PALI 0H8 Series 1 0 H 8 , 1 2 H 6 , 1 4 H 4 , 1 6 H 2 1 6 C 1 1 0 L 8 , 1 2 L 6 , 1 4 L 4 - , 1 6 L 2 Ordering Information


    OCR Scan     		055755b U2b7526 PAL10H8 2t2t303f T-46-13-47 025752b 14H4j 14L4 10l8 12L6 12H6 16c1 4511 logic diagram 1117 L schematic diagram PAL14L pin shourd PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL a COM’L: -12 Advanced Micro Devices M A C H L V 2 1 0 - 1 2 High Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3-V JEDEC compatible — V c c = +3.0 V to +3.6 V ■ 58 MHz fMAxexternal Commercial ■ 38 Inputs with advanced pull-up/pull-down


    OCR Scan     		PAL22V16â MACH210 MACH110, MACH215 44-Pin 28-Pin) 27-044-1221-028A 055755b MACHLV210-12 PDF

    mach 3 family amd

    Abstract: circuit diagram of QS 8005 PAL26V16 D750 MACH110 MACH210 MACH215 PAL22V10 mach 1 family amd NS4N
    Text: FINAL COM’L: -7.5/10/12/15/20 IND: -10/12/14/18/24 M A C H 2 1 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic Z I Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 64 Macrocells ■ Programmable power-down mode ■ 32 Outputs


    OCR Scan     		MACH211-7/10/12/15/20 PAL26V16" MACH110, MACH111, MACH210, MACH215 MACH210 MACH211 PQT044 44-Pin mach 3 family amd circuit diagram of QS 8005 PAL26V16 D750 MACH110 MACH210 MACH215 PAL22V10 mach 1 family amd NS4N PDF

    PAL16l8 MMI

    Abstract: PAL16LA OO3A MARKING PAL 006A pal 007a PLA 16L8 PAL16L8 programming algorithm IC PALCE16 mmi pla programmer reference guide pal 005a
    Text: ADV HICRO PLA/PLE/ARRAYS C O M ’L 2flE 0aS7S2b D OGa^Mb- M IL P A L 1 6 R 8 il \ T -4 6 —1 9 -1 3 Am>a 5 Advanced Micro Devices F a m i l y 20-pin TTL P rogram m able Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns maximum propagation delay


    OCR Scan     		PAL16R8 20-pin PAL16L8, PAL16R8, PAL16R6, PAL16R4) PAL16l8 MMI PAL16LA OO3A MARKING PAL 006A pal 007a PLA 16L8 PAL16L8 programming algorithm IC PALCE16 mmi pla programmer reference guide pal 005a PDF

    Untitled

    Abstract: No abstract text available
    Text: COM'L: -15/25 IND: -12/15/25 PALCE16V8Z FAMILY a Advanced Micro Devices Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Zero-Power CMOS technology — 15 nA Standby Current — 12 ns propagation delay for “-12” version


    OCR Scan     		PALCE16V8Z 20-Pin PAL16R8 PAL10H8 0257S2b PALCE16V8Z-25 25752b QQ3MA75 PALCE16V8ZFamily PDF

    palce16v8 programming algorithm

    Abstract: No abstract text available
    Text: 5TE D • 02 57 5 2 b 00 32 2 7 1 510 MANDE ADV MICRO PLA/PLE/ARRAYS COM’L: H-7/10/15/25, Q-15/25 -_ MIL: H-10/15/20/25 PALCE16V8 Family AdvS EE CMOS 20-Pin Universal Programmable Array Logic Devices DISTINCTIVE CHARACTERISTICS ■ ■ Pin, function and fuse-map compatible with all


    OCR Scan     		H-7/10/15/25, Q-15/25 H-10/15/20/25 PALCE16V8 20-Pin palce16v8 programming algorithm PDF

    16L8-5

    Abstract: PAL16R8
    Text: ADV MICRO P L A / P L E / A R R A Y S 2ÔE D G25752fci GG311Gb b AMD2 CO M 'L: -5/4 T—46—19—13 Z f Advanced Micro Devices PAL16R8-5/4 Series 5 ns TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • 5 ns and 4.5 ns m axim um pro p a g a tio n delay


    OCR Scan     		G25752fci GG311Gb PAL16R8-5/4 20-pin 0Q3112Ã 0257S2fc. 16L8-5 PAL16R8 PDF

    Pal programming

    Abstract: EP610 PALCE610 EP610 ORDERING EP610 "pin compatible"
    Text: COM’L: H-15/25 Advanced Micro Devices PALCE610 Family EE CMOS High Performance Programmable Array Logic DISTINCTIVE CHARACTERISTICS • AMD’s Programmable Array Logic PAL architecture Asynchronous clocking via product term or bank register clocking from external pins


    OCR Scan     		H-15/25 PALCE610 15-nstpD 25-ns 24-pin 28-pin 025752b Pal programming EP610 EP610 ORDERING EP610 "pin compatible" PDF

    PALCE16VQ-25

    Abstract: palce16v8 programming guide palce16v8h20
    Text: COM’L: H-5/7/10/15/25,0-10/15/25 IND: H-10/15/25, Q-20/25 MIL: H-15/20/25 PALCE16V8 Family EE CMOS 20-Pin Universal Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Pin, function and fuse-map compatible with all 20-pin GAL devices


    OCR Scan     		H-5/7/10/15/25 H-10/15/25, Q-20/25 H-15/20/25 PALCE16V8 20-Pin PAL16R8 PAL10H8 PALCE16VQ-25 palce16v8 programming guide palce16v8h20 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO PLA/PLE/ARRAYS c o m 2ÖE D fl 055752b 002^742 2 • AMD2 -l PLS167-33, PLSCE167H-33 PLS168-33, PLSCE168H-33 ' ^ Advanœd mero Devices 24-Pin TTL/CMOS Programmable Logic Sequencers DISTINCTIVE CHARACTERISTICS ■ ■ Field-programm able replacement for


    OCR Scan     		055752b PLS167-33, PLSCE167H-33 PLS168-33, PLSCE168H-33 24-Pin 12905-O13A PLS167/168 PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL IND: -10/12/14/18/24 COM’L: -7.5/10/12/15/20 a Advanced Micro Devices M A C H 2 1 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 64Macrocells ■ Programmable power-down mode ■ 7.5 ns î p d Commercial


    OCR Scan     		64Macrocells PAL26V16â MACH110, MACH111, MACH210, MACH215 MACH210 MACH211 16-038-SQ PQT044 PDF

    AmPAL23S8-30

    Abstract: No abstract text available
    Text: A DV MICRO PLA/PLE/ARRAYS , Tt. D e | 02S7S2t, 0 0 2 7 2 2 7 1 T -V 4 -/3 -V 7 AmPAL23S8 20-Pin IMOX PAL Device-Based Sequencer Distinctive C haracteristics • • • • • 14 Registers - 4 Output Logic Macrocells OLMs - 4 Output Registers - 6 Buried State Registers (BSRs)


    OCR Scan     		02S7S2t, 20-Pin 20-pin 33-MHz extemal/40-MHz AmPAL23S8-30 PDF

    Untitled

    Abstract: No abstract text available
    Text: CO M 'L: H-25 Advanced Micro Devices PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • H igh-perform ance sem icustom logic replacem ent; E lectrically Erasable EE technology allow s reprogram m ability ■ 16 bidirectional user-program m able I/O logic


    OCR Scan     		PALCE29MA16H-25 24-Pin 0257S2b 0D35211 PDF

    Am2BF010A

    Abstract: to525 Transistor 2SC 2166
    Text: Zi A m 2 8 F 0 1 0 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 90 ns m aximum access time ■ CMOS low power consum ption ■


    OCR Scan     		Am28F010A 32-Pin 0D327b5 Am2BF010A to525 Transistor 2SC 2166 PDF

    MACH210

    Abstract: No abstract text available
    Text: FINAL COM’L: -7/10/12/15/20, Q-12/15/20 a IND: -12/14/18/24 MACH21OA-7/10/12 MACH210-12/15/20 MACH210AQ-12/15/20 Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ Peripheral Component Interconnect PCI


    OCR Scan     		Q-12/15/20 MACH21OA-7/10/12 MACH210-12/15/20 MACH210AQ-12/15/20 PAL22V16â MACH110, MACH111, MACH211, MACH215 MACH210 PDF

    Untitled

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High perform ance ■ CM OS low pow er consum ption — 30 m A maximum active current


    OCR Scan     		Am28F256A 32-pin 28F256A 0D32b3M PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL COM’L: -12/15/20 a IND: -14/18/24 Advanced Micro Devices M A C H 110-1 2 /1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 32Macrocells ■ 32 Outputs ■ 12 ns fpD Commercial 14 ns tpD Industrial ■ 2 “PAL22V16” Blocks


    OCR Scan     		32Macrocells PAL22V16â MACH111, MACH210, MACH211, MACH215 MACH110 PAL22V10 MACH110-12/15/20 PDF

    Untitled

    Abstract: No abstract text available
    Text: 51E DE5752b D 003225b 577 • A U D E ADV MICRO P L A / P L E / A R R A Y S COM’L: -4/5/7/D/B/B-2/A MIL: - 1 0 /1 2/B/B-2/A/B-4 a Advanced Micro Devices PAL16R8 Family 20-Pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS ■ As fast as 4.5 ns maximum propagation delay


    OCR Scan     		DE5752b 003225b PAL16R8 20-Pin 20-pfn 28-pin PAL16L8, PAL16R8, PDF

    Untitled

    Abstract: No abstract text available
    Text: COM’L: H-7/10/15/20 IND: H-10/15/20 Advanced Micro Devices PALCE26V12 Family 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 105 mA at high


    OCR Scan     		H-7/10/15/20 H-10/15/20 PALCE26V12 28-Pin GG351b3 PALCE26V12H-15/20 PALCE26V12H-7/10/15/20 PDF

    Untitled

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y CO M ’L: -7/10/12/15/20 MACH221 -7/10/12/15/20 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 96 M acrocells ■ 7.5 ns tpD ■ ■ 133 M Hz fcNT ■ 56 Bus-Friendly Inputs ■


    OCR Scan     		MACH221 PAL26V12" MACH120 MACH220 025752b 0037M01 PQR208 208-Pin 16-038-PQR-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: COM’L: H-7/10/15/20 n IND: H-10/15/20 Advanced Micro Devices PALCE26V12 Family 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 115 mA at high


    OCR Scan     		H-7/10/15/20 H-10/15/20 PALCE26V12 28-Pin 16072E-18 02S7S2b PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV NICRO PLA/PLE/ARRAYS PA LC E 29M 16H - 25/35 13E 0 > 0E5752t □ O S A I S' I I 24-Pin E2-Based CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS High-performance semicustom logic replace­ ment; Electrically Erasable E2 technology allows rep ro g ra m m a b le


    OCR Scan     		0E5752t 24-Pin PQ3024 Q2S752fei CD3024 06850C PL028 067S1E PDF

    M27C4096

    Abstract: Am27C4096
    Text: FINAL a Advanced Micro Devices Am27C4096 4 M egabit 262,144 x 16-B it C M O S EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — 90 ns ■ Low power consumption — 100 pA maximum CMOS standby current ■ JEDEC-approved pinout ■ Single + 5 V power supply


    OCR Scan     		Am27C4096 40-pin 44-pin 16-038-SC 16-038-SQ 0257S2B M27C4096 PDF